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    design ideas

    Abstract: TS16949 ZXTN5551G ZXTP5401G
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTC ZXTP5401GTA D-81541 design ideas TS16949 ZXTN5551G ZXTP5401G

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


    Original     		PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTA ZXTP5401GTC D-81541

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT605 120V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 120V  Case: SOT223  BVCBO > 140V  Case material: molded plastic. “Green” molding compound.  IC = 1.5A High Continuous current


    Original     		PDF FZT605 OT223 J-STD-020 AEC-Q101 MIL-STD-202, DS33147

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT692B 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 70V   BVCBO > 70V   IC = 2.0A High Continuous current Case: SOT223 Case material: molded plastic. “Green” molding compound.


    Original     		PDF FZT692B OT223 AEC-Q101 J-STD-020 MIL-STD-202cknowledge DS33157

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT957 300V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > -300V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Pulse Current Case: SOT223 Case material: molded plastic. “Green” molding compound.


    Original     		PDF FZT957 OT223 -300V -240mV FZT857 J-STD-020 MIL-STD-202, DS33191

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5616Q OT223 500mV BCP5316Q DS36981

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •


    Original     		PDF FZT651Q OT223 J-STD-020 300mV MIL-STD-202, DS36917

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features


    Original     		PDF FZT751Q OT223 -300mV FZT651Q AEC-Q101 DS36963

    FZT857QTA

    Abstract: Y1 marking MARKING fzt
    Text: A Product Line of Diodes Incorporated Green FZT857 300V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V   IC = 3.5A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF FZT857 OT223 155mV FZT957 AEC-Q101 OT223 J-STD-020 DS33177 FZT857QTA Y1 marking MARKING fzt

    BSP75N

    Abstract: No abstract text available
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75N 550mJ OT223

    Untitled

    Abstract: No abstract text available
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223

    FZT751

    Abstract: FZT751TA FZT651 FZT marking code MARKING fzt751 MARKING fzt 751 MARKING fzt
    Text: A Product Line of Diodes Incorporated FZT751 SOT223 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Features • • • • Mechanical Data • • • • • VCEO = 60V Continuous current IC cont = 3A Low Saturation Voltage Complementary Type – FZT651


    Original     		PDF FZT751 OT223 FZT651 OT-223 J-STD-020 FZT751TA FZT751-7 FZT751 FZT751TA FZT651 FZT marking code MARKING fzt751 MARKING fzt 751 MARKING fzt

    Untitled

    Abstract: No abstract text available
    Text: DZTA42 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 300V • • IC = 500mA high Collector Current • • • 2W Power Dissipation Low Saturation Voltage VCE sat < 500mV @ 20mA • • Complementary PNP Type: DZTA92 •


    Original     		PDF DZTA42 OT223 500mA 500mV DZTA92 AEC-Q101 J-STD-020 MIL-STD-202,

    FZT851

    Abstract: FZT851TA
    Text: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V • • IC = 6A High Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •


    Original     		PDF FZT851 OT223 100mV FZT951 AEC-Q101 OT223 J-STD-020 DS33174 FZT851 FZT851TA

    522BS

    Abstract: BSP75GTA
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223 522-BSP75GTA BSP75GTA 522BS BSP75GTA

    Untitled

    Abstract: No abstract text available
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223

    Untitled

    Abstract: No abstract text available
    Text: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75N 550mJ OT223

    FZT855Ta

    Abstract: fzt855
    Text: A Product Line of Diodes Incorporated Green FZT855 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 150V   IC = 5A high Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 


    Original     		PDF FZT855 OT223 110mV FZT955 AEC-Q101 OT223 J-STD-020 DS33176 FZT855Ta fzt855

    FZT853

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT853 100V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 100V • • IC = 6A high Continuous Collector Current • Case Material: Molded Plastic. “Green” Molding Compound. •


    Original     		PDF FZT853 OT223 150mV FZT953 AEC-Q101 OT223 J-STD-020 DS33175 FZT853

    BSP75G

    Abstract: BSP75GTA BSP75GTC
    Text: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over


    Original     		PDF BSP75G 550mJ OT223 BSP75G BSP75GTA BSP75GTC

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 60V   IC = 6A High Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 


    Original     		PDF FZT851 OT223 J-STD-020 100mV MIL-STD-202, FZT951 DS33174

    ZNS66

    Abstract: No abstract text available
    Text: DSS60601MZ4 60V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data •     BVCEO > 60V IC = 6A High Continuous Current ICM = 12A Peak Pulse Current Low Saturation Voltage VCE sat < 60mV @ 1A Complementary PNP Type: DSS60600MZ4


    Original     		PDF DSS60601MZ4 OT223 DSS60600MZ4 AEC-Q101 J-STD-020 MIL-STD-202, DS31587 ZNS66