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    SOT223 MARKING Search Results

    SOT223 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    SOT223 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSP123

    Abstract: E6327 Q67000-S306
    Text: Rev. 1.0 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A SOT223 Type Package Ordering Code Tape and Reel Information Marking BSP123 SOT223


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    PDF BSP123 OT223 Q67000-S306 E6327: BSP123 E6327 Q67000-S306

    diode 78a

    Abstract: tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A
    Text: BAS78A.BAS78D Silicon Switching Diodes  Switching applications 4  High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C


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    PDF BAS78A. BAS78D VPS05163 EHA00004 BAS78A OT223 BAS78B BAS78C diode 78a tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A

    design ideas

    Abstract: TS16949 ZXTN5551G ZXTP5401G
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


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    PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTC ZXTP5401GTA D-81541 design ideas TS16949 ZXTN5551G ZXTP5401G

    Untitled

    Abstract: No abstract text available
    Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package


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    PDF ZXTP5401G OT223, -150V -600mA ZXTN5551G OT223 ZXTP5401GTA ZXTP5401GTC D-81541

    zxtP

    Abstract: Bv 42 transistor ZXTP2008GTA
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC 522-ZXTP2008GTA ZXTP2008GTA zxtP Bv 42 transistor

    sot223 device Marking

    Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
    Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


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    PDF ZX5T869G OT223 OT223 sot223 device Marking transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC

    ZXTP19100CG

    Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
    Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP19100CG OT223 -100V -130mV ZXTN19100CG OT223 ZXTP19100CGTA D-81541 ZXTP19100CG ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver

    ZXTP25 20V 6A

    Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
    Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP25020DG OT223 -65mV ZXTN25020DG OT223 ZXTP25020DGTA D-81541 ZXTP25 20V 6A ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA

    X5T949

    Abstract: sot223 transistor pinout ZX5T949G
    Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in


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    PDF ZX5T949G OT223 OT223 ZX5T949GTA X5T949 sot223 transistor pinout ZX5T949G

    ZXTP19060CG

    Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
    Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA

    ZXTN2005G

    Abstract: ZXTN2005GTA ZXTN2005GTC
    Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTN2005G OT223 OT223 ZXTN2005G ZXTN2005GTA ZXTN2005GTC

    marking 8A sot223

    Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
    Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP19020DG OT223 -47mV ZXTN19020DG OT223 ZXTP19020Dex D-81541 marking 8A sot223 TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA

    sot223 transistor pinout

    Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
    Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTP2008G OT223 OT223 ZXTP2008GTA ZXTP2008GTC sot223 transistor pinout sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP

    zxtn

    Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
    Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTN2005G OT223 OT223 R26100 zxtn sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA

    ZXTN25020DG

    Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
    Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


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    PDF ZXTN25020DG OT223 ZXTP25020DG OT223 D-81541 ZXTN25020DG TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25

    zxtP

    Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
    Text: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTP2014G OT223 -140V OT223 ZXTP2014GTA ZXTP2014GTC zxtP ZXTP2014G ZXTP2014GTA ZXTP2014GTC

    marking 8A sot223

    Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
    Text: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.


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    PDF FZT717 OT223 FZT717TA marking 8A sot223 sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320

    X5T849

    Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
    Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


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    PDF ZX5T849G OT223 OT223 X5T849 ZX5T849G ZX5T849GTA ZX5T849GTC

    ZXTN19020DG

    Abstract: TS16949 ZXTN19020DGTA ZXTP19020DG
    Text: ZXTN19020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 9A VCE(sat) < 35mV @ 1A RCE(sat) = 20mΩ PD = 3.0W Complementary part number ZXTP19020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


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    PDF ZXTN19020DG OT223 ZXTP19020DG OT223 D-81541 ZXTN19020DG TS16949 ZXTN19020DGTA ZXTP19020DG

    X5T851

    Abstract: bv 42 TRANSISTOR equivalent
    Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in


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    PDF ZX5T851G OT223 OT223 522-ZX5T851GTA ZX5T851GTA X5T851 bv 42 TRANSISTOR equivalent

    sot223 device Marking

    Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
    Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in


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    PDF ZX5T869G OT223 OT223 Q26100 sot223 device Marking npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP19020DG OT223 -47mV ZXTN19020DG OT223 D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP25020DG OT223 -65mV ZXTN25020DG OT223 ZXTP25020DGTA D-81541

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT605 120V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 120V  Case: SOT223  BVCBO > 140V  Case material: molded plastic. “Green” molding compound.  IC = 1.5A High Continuous current


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    PDF FZT605 OT223 J-STD-020 AEC-Q101 MIL-STD-202, DS33147