BSP123
Abstract: E6327 Q67000-S306
Text: Rev. 1.0 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A SOT223 Type Package Ordering Code Tape and Reel Information Marking BSP123 SOT223
|
Original
|
BSP123
OT223
Q67000-S306
E6327:
BSP123
E6327
Q67000-S306
|
PDF
|
diode 78a
Abstract: tr 30 f 124 BAS78A BAS78B BAS78C BAS78D VPS05163 DIODE marking 78A
Text: BAS78A.BAS78D Silicon Switching Diodes Switching applications 4 High breakdown voltage 3 2 1 VPS05163 2, 4 1 EHA00004 Type Marking Pin Configuration Package BAS78A BAS 78A 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78B BAS 78B 1=A 2=C 3 = n.c. 4 = C SOT223 BAS78C
|
Original
|
BAS78A.
BAS78D
VPS05163
EHA00004
BAS78A
OT223
BAS78B
BAS78C
diode 78a
tr 30 f 124
BAS78A
BAS78B
BAS78C
BAS78D
VPS05163
DIODE marking 78A
|
PDF
|
design ideas
Abstract: TS16949 ZXTN5551G ZXTP5401G
Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package
|
Original
|
ZXTP5401G
OT223,
-150V
-600mA
ZXTN5551G
OT223
ZXTP5401GTC
ZXTP5401GTA
D-81541
design ideas
TS16949
ZXTN5551G
ZXTP5401G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC cont = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package
|
Original
|
ZXTP5401G
OT223,
-150V
-600mA
ZXTN5551G
OT223
ZXTP5401GTA
ZXTP5401GTC
D-81541
|
PDF
|
zxtP
Abstract: Bv 42 transistor ZXTP2008GTA
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
522-ZXTP2008GTA
ZXTP2008GTA
zxtP
Bv 42 transistor
|
PDF
|
sot223 device Marking
Abstract: transistor 355 ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 27m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
ZX5T869G
OT223
OT223
sot223 device Marking
transistor 355
ZX5T869G
ZX5T869GTA
ZX5T869GTC
|
PDF
|
ZXTP19100CG
Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
Text: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
|
Original
|
ZXTP19100CG
OT223
-100V
-130mV
ZXTN19100CG
OT223
ZXTP19100CGTA
D-81541
ZXTP19100CG
ZXTP19100C
TS16949
ZXTN19100CG
ZXTP19100CGTA
30W dc motor current driver
|
PDF
|
ZXTP25 20V 6A
Abstract: ZXTP25020DG ZXTN25020DG TS16949 ZXTP25020DGTA
Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
|
Original
|
ZXTP25020DG
OT223
-65mV
ZXTN25020DG
OT223
ZXTP25020DGTA
D-81541
ZXTP25 20V 6A
ZXTP25020DG
ZXTN25020DG
TS16949
ZXTP25020DGTA
|
PDF
|
X5T949
Abstract: sot223 transistor pinout ZX5T949G
Text: ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in
|
Original
|
ZX5T949G
OT223
OT223
ZX5T949GTA
X5T949
sot223 transistor pinout
ZX5T949G
|
PDF
|
ZXTP19060CG
Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
|
Original
|
ZXTP19060CG
OT223
-80mV
ZXTN19060CG
OT223
ZXTP19060CGTA
D-81541
ZXTP19060CG
TS16949
ZXTN19060CG
ZXTP19060CGTA
|
PDF
|
ZXTN2005G
Abstract: ZXTN2005GTA ZXTN2005GTC
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
ZXTN2005G
OT223
OT223
ZXTN2005G
ZXTN2005GTA
ZXTN2005GTC
|
PDF
|
marking 8A sot223
Abstract: TS16949 ZXTN19020DG ZXTP19020DG ZXTP19020DGTA
Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
|
Original
|
ZXTP19020DG
OT223
-47mV
ZXTN19020DG
OT223
ZXTP19020Dex
D-81541
marking 8A sot223
TS16949
ZXTN19020DG
ZXTP19020DG
ZXTP19020DGTA
|
PDF
|
sot223 transistor pinout
Abstract: sot223 device Marking ZXTP2008G ZXTP2008GTA ZXTP2008GTC zxtP
Text: ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
ZXTP2008G
OT223
OT223
ZXTP2008GTA
ZXTP2008GTC
sot223 transistor pinout
sot223 device Marking
ZXTP2008G
ZXTP2008GTA
ZXTP2008GTC
zxtP
|
PDF
|
zxtn
Abstract: sot223 device Marking ZXTN2005GTC ZXTN2005G ZXTN2005GTA
Text: ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
ZXTN2005G
OT223
OT223
R26100
zxtn
sot223 device Marking
ZXTN2005GTC
ZXTN2005G
ZXTN2005GTA
|
PDF
|
|
|
ZXTN25020DG
Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
|
Original
|
ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
ZXTN25020DG
TS16949
ZXTN25020DGTA
ZXTP25020DG
ON950
ZXTN25
|
PDF
|
zxtP
Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
Text: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
|
Original
|
ZXTP2014G
OT223
-140V
OT223
ZXTP2014GTA
ZXTP2014GTC
zxtP
ZXTP2014G
ZXTP2014GTA
ZXTP2014GTC
|
PDF
|
marking 8A sot223
Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
Text: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
|
Original
|
FZT717
OT223
FZT717TA
marking 8A sot223
sot223 transistor pinout
transistor pnp 12V 1A Continuous Current Peak
FZT717
FZT717TA
12v pnp transistor
zetex 320
|
PDF
|
X5T849
Abstract: ZX5T849G ZX5T849GTA ZX5T849GTC
Text: ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
ZX5T849G
OT223
OT223
X5T849
ZX5T849G
ZX5T849GTA
ZX5T849GTC
|
PDF
|
ZXTN19020DG
Abstract: TS16949 ZXTN19020DGTA ZXTP19020DG
Text: ZXTN19020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 9A VCE(sat) < 35mV @ 1A RCE(sat) = 20mΩ PD = 3.0W Complementary part number ZXTP19020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
|
Original
|
ZXTN19020DG
OT223
ZXTP19020DG
OT223
D-81541
ZXTN19020DG
TS16949
ZXTN19020DGTA
ZXTP19020DG
|
PDF
|
X5T851
Abstract: bv 42 TRANSISTOR equivalent
Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
ZX5T851G
OT223
OT223
522-ZX5T851GTA
ZX5T851GTA
X5T851
bv 42 TRANSISTOR equivalent
|
PDF
|
sot223 device Marking
Abstract: npn 20A ZX5T869G ZX5T869GTA ZX5T869GTC
Text: ZX5T869G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in
|
Original
|
ZX5T869G
OT223
OT223
Q26100
sot223 device Marking
npn 20A
ZX5T869G
ZX5T869GTA
ZX5T869GTC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXTP19020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 8A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 3.0W Complementary part number ZXTN19020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
|
Original
|
ZXTP19020DG
OT223
-47mV
ZXTN19020DG
OT223
D-81541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor
|
Original
|
ZXTP25020DG
OT223
-65mV
ZXTN25020DG
OT223
ZXTP25020DGTA
D-81541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT605 120V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 120V Case: SOT223 BVCBO > 140V Case material: molded plastic. “Green” molding compound. IC = 1.5A High Continuous current
|
Original
|
FZT605
OT223
J-STD-020
AEC-Q101
MIL-STD-202,
DS33147
|
PDF
|
