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    SOT143R TRANSISTOR Search Results

    SOT143R TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SOT143R TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Field-Effect Transistors

    Abstract: SOT54variant diodes PACKAGE
    Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N


    Original     		PDF OD110 OD323 OD523 OT54variant OT143B OT143R OT323 OT343N OT343R OT363 Field-Effect Transistors SOT54variant diodes PACKAGE

    Untitled

    Abstract: No abstract text available
    Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   


    Original     		PDF BFG310/XR OT143R BFG310

    RF Wideband Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .


    Original     		PDF OT54variant OT122A OT143B OT143R OT172A1 OT172A2 OT223 OT323 OT343N OT343R RF Wideband Transistors

    TRANSISTOR L2

    Abstract: transistor bf 194 E C B
    Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		PDF BFG325/XR OT143R TRANSISTOR L2 transistor bf 194 E C B

    Untitled

    Abstract: No abstract text available
    Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   


    Original     		PDF BFG310/XR OT143R BFG310

    transistor l2

    Abstract: transistor bf 194
    Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   


    Original     		PDF BFG325/XR OT143R BFG325 transistor l2 transistor bf 194

    transistor l2

    Abstract: No abstract text available
    Text: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		PDF BFG310/XR OT143R transistor l2

    BF1108_BF1108R

    Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
    Text: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The


    Original     		PDF BF1108; BF1108R OT143B BF1108) OT143R BF1108R) BF1108 BF1108R BF1108_BF1108R BF1108_1108R_3 MARKING CODE CGK

    Untitled

    Abstract: No abstract text available
    Text: BFG325/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits   


    Original     		PDF BFG325/XR OT143R BFG325

    RF Wideband Transistors

    Abstract: MS-012AA
    Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .


    Original     		PDF OT96-1 OT122A OT122D OT122E OT143B OT143R OT172A1 OT172A2 OT223 OT323 RF Wideband Transistors MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: BFU550XR NPN wideband silicon RF transistor Rev. 1 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU550XR OT143R BFU550XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU520XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU520XR OT143R BFU520XR AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFU530XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to


    Original     		PDF BFU530XR OT143R BFU530XR AEC-Q101

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature


    OCR Scan     		PDF BF998R OT143R

    transistor marking M04 GHZ

    Abstract: m04 marking dual-gate
    Text: Short-form preliminary specification Philips Sem iconductors Dual-gate MOS-FET BF904; BF904R FEATURES DESCRIPTION • Specially designed for use at 5 V supply voltage Enhancement type field-effect transistors in plastic micro-miniature SOT143 and SOT143R envelopes.


    OCR Scan     		PDF BF904; BF904R OT143 OT143R MAM077 OT143) transistor marking M04 GHZ m04 marking dual-gate

    Marking G1s

    Abstract: No abstract text available
    Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF


    OCR Scan     		PDF bbS3131 BF992R OT143R Marking G1s

    SOT-143R

    Abstract: sot-143 rl SOT143R sot143 RA
    Text: 99 Surface Mount Devices Wideband Transistors cont. f (MHz) P ino u t See S e ctio n VII 12 12 2000 2000 X AB — 2000 2000 2000 800 12 10.9 10.9 10.9 17.5 800 2000 2000 2000 800 S Q X AB Q 2.4 2.4 2.3 2.3 2.3 800 800 800 800 800 17.5 17.5 17 17 17 800 800


    OCR Scan     		PDF BFG33/X BFG33/XR BFG35 BFG67 BFG67/X BFG67/XR BFG92A BFG92A/X BFG92A/XR BFG93A SOT-143R sot-143 rl SOT143R sot143 RA

    NE68018

    Abstract: No abstract text available
    Text: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10


    OCR Scan     		PDF OT-23) NE68018

    UHF UHF Transistors

    Abstract: BF909R BF98 BF991
    Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Tuner transistors & diodes NPN TUNER TRANSISTORS type ratings_ number V CEO 'c P.O. V (mA) 50 50 50 50 25 35 25 25 characteristics11_


    OCR Scan     		PDF BF547 BF547W BF747 BFG67 BFR92A BFR93A BFS17 BFS17A OT323 OT143 UHF UHF Transistors BF909R BF98 BF991

    philips vhf uhf tuner

    Abstract: UHF UHF Transistors BF909R philips rf mosfets SOT343R BF908R BF98 BF991
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Tuner transistors & diodes RF & MICROWAVE SEMICONDUCTORS & MODULES NPN TUNER TRANSISTORS type number characteristics11_ ratings V CEO 'c Ptot h V (mA) (mW) (MHz) F (dB) 50


    OCR Scan     		PDF BF547 BF547W BF747 BFG67 BFR92A BFR93A BFS17 BFS17A OT323 listeF908WR philips vhf uhf tuner UHF UHF Transistors BF909R philips rf mosfets SOT343R BF908R BF98 BF991

    sot 326

    Abstract: 338 sot-23 NE68530 NE02139
    Text: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100


    OCR Scan     		PDF NE68018 NE68118 NE68518 NE68618 NE68718 NE68818 NE85618 NE68019 NE68119 NE68519 sot 326 338 sot-23 NE68530 NE02139

    PN4416

    Abstract: BF98 BF991 BF998 BF909WR BF1105WR
    Text: Philips Semiconductors Small-signal field-effect transistors Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER PACKAGE ±VDs V •g (mA) •d s s iytsl (mS) ~V(P)GS (V) min - max (mA) Crs (PF) PAGE General purpose analog applications


    OCR Scan     		PDF PMBFJ210 PMBFJ211 PMBFJ212 BF245A BF245B BF245C BF545A BF545B BF545C BF556A PN4416 BF98 BF991 BF998 BF909WR BF1105WR

    SOT-173

    Abstract: sot173 BFP96 BFQ32C
    Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A


    OCR Scan     		PDF BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C