SOT1228A
Abstract: No abstract text available
Text: Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1228A D A F w1 D1 U1 B q C w2 H1 1 B c C 2 w3 H A A B E1 p U2 E 5 A 3 w1 4 A B w1 b w4 Q w4 e 5 A B 0.380 10 mm 0.015 scale Dimensions Unit 1 max nom min mm A b c 5.2 5.59 0.15 16.66 16.69
|
Original
|
PDF
|
OT1228A
sot1228a
|
sot979
Abstract: No abstract text available
Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)
|
Original
|
PDF
|
OT975B
OT538A
OT1227A
OT975C
OT1227B
OT467B
OT467C
OT1228A
OT1228B
OT608A
sot979
|
BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
|
Original
|
PDF
|
|
BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 2 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
|
Original
|
PDF
|
CLF1G0035-100P;
CLF1G0035S-100P
CLF1G0035-100P
CLF1G0035S-100P
1G0035S-100P
|
Untitled
Abstract: No abstract text available
Text: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz.
|
Original
|
PDF
|
BLF644P
|
CLF1G0035-100P
Abstract: sot1228 electromagnetic pulse jammers
Text: CLF1G0035-100P; CLF1G0035S-100P Broadband RF power GaN HEMT Rev. 1 — 10 December 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
|
Original
|
PDF
|
CLF1G0035-100P;
CLF1G0035S-100P
CLF1G0035-100P
CLF1G0035S-100P
1G0035S-100P
sot1228
electromagnetic pulse jammers
|
Untitled
Abstract: No abstract text available
Text: BLF644P Broadband power LDMOS transistor Rev. 1 — 11 June 2013 Objective data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent
|
Original
|
PDF
|
BLF644P
|
