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    SOT1220 Search Results

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    SOT1220 Price and Stock

    Nexperia BUK6D56-60EX

    MOSFETs BUK6D56-60E/SOT1220/SOT1220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK6D56-60EX Reel 228,000 3,000
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    • 10000 $0.112
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    Nexperia BUK6D385-100EX

    MOSFETs BUK6D385-100E/SOT1220/SOT1220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK6D385-100EX Reel 144,000 3,000
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    • 10000 $0.109
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    Nexperia PMPB23XNE,115

    MOSFETs SOT1220 N CHAN 20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMPB23XNE,115 Reel 60,000 3,000
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    • 10000 $0.126
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    Nexperia PMPB29XNE,115

    MOSFETs SOT1220 N CHAN 30V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMPB29XNE,115 Reel 33,000 3,000
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    • 10000 $0.091
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    Toshiba America Electronic Components SSM6K361NU,LF

    MOSFETs SOT1220 100V 3.5A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SSM6K361NU,LF Reel 15,000 3,000
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    • 10000 $0.126
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    Find more SOT1220 price and stock on Findchips.com

    SOT1220 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT1220 NXP Semiconductors Plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals Original PDF
    SOT1220_115 NXP Semiconductors DFN2020MD-6; reel pack; Standard orientation; 12NC ending 115 Original PDF
    SOT1220_125 NXP Semiconductors DFN2020MD-6; Tape reel SMD; reversed product orientation 12NC ending 125 Original PDF

    SOT1220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB15XP DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB85ENEA DFN2020MD-6 OT1220) AEC-Q101

    marking code 1s

    Abstract: No abstract text available
    Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB33XP DFN2020MD-6 OT1220) marking code 1s

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF NX2020P1 DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: 0'  SOT1220 ' 1   DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the


    Original     		PDF OT1220 DFN2020MD-6; 001aak603 DFN2020 OT1220

    Untitled

    Abstract: No abstract text available
    Text: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB13XNE DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101

    marking code 1f

    Abstract: NXP SMD mosfet MARKING CODE
    Text: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB12UN DFN2020MD-6 OT1220) marking code 1f NXP SMD mosfet MARKING CODE

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
    Text: PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB33XN DFN2020MD-6 OT1220) TRANSISTOR SMD MARKING CODE 1P smd transistor marking 1p smd TRANSISTOR code marking 1P

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB20UN DFN2020MD-6 OT1220) MOSFET TRANSISTOR SMD MARKING CODE A1 MOSFET TRANSISTOR SMD MARKING CODE 11

    Untitled

    Abstract: No abstract text available
    Text: PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB48EP DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF NX2020N2 DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: 0'  SOT1220 ' 1   DFN2020MD-6; Tape reel SMD; reversed product orientation 12NC ending 125 Rev. 1 — 4 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent)


    Original     		PDF OT1220 DFN2020MD-6; 001aak603 DFN20 OT1220

    Untitled

    Abstract: No abstract text available
    Text: PMPB47XP 30 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB47XP DFN2020MD-6 OT1220) Quic11

    PMPB15XP,115

    Abstract: No abstract text available
    Text: PMPB15XP 12 V, single P-channel Trench MOSFET 22 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB15XP DFN2020MD-6 OT1220) PMPB15XP,115

    Untitled

    Abstract: No abstract text available
    Text: PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB29XPE DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB215ENEA 80 V, single N-channel Trench MOSFET 18 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB215ENEA DFN2020MD-6 OT1220) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB11EN DFN2020MD-6 OT1220)

    DFN2020MD-6

    Abstract: No abstract text available
    Text: Reflow soldering footprint Footprint information for reflow soldering of DFN2020MD-6 package 0.33 6x SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935


    Original     		PDF DFN2020MD-6 OT1220 sot1220

    sot1220

    Abstract: LPY1
    Text: Package outline DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1220 8x pin 1 index area A B E X D A A1 detail X solderable lead end protrusion max. 0.02 mm (6×) C Lp E2 J1 D2 3 4 2


    Original     		PDF DFN2020MD-6: OT1220 OT1220 sot12204 sot1220 LPY1

    PMPB27EP

    Abstract: MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029
    Text: PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB27EP DFN2020MD-6 OT1220) PMPB27EP MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029

    marking code 1L

    Abstract: TRANSISTOR SMD MARKING CODE 1l
    Text: PMPB16XN 30 V, single N-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB16XN DFN2020MD-6 OT1220) marking code 1L TRANSISTOR SMD MARKING CODE 1l

    Untitled

    Abstract: No abstract text available
    Text: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMPB11EN DFN2020MD-6 OT1220)