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    SOT1215 Search Results

    SOT1215 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT1215 NXP Semiconductors Footprint for reflow soldering SOT1215 Original PDF
    SOT1215 NXP Semiconductors Plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals Original PDF

    SOT1215 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB75UPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


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    PBSS4260QA DFN1010D-3 OT1215) PBSS5260QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB75UPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB65ENE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original
    PBSS4230QA DFN1010D-3 OT1215) PBSS5230QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB65UPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original
    PBSS5260QA DFN1010D-3 OT1215) PBSS4260QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB56EN DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB65ENE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB120EPE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


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    PMXB40UNE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB40UNE DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original
    PBSS5230QA DFN1010D-3 OT1215) PBSS4230QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


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    PBSS5130QA DFN1010D-3 OT1215) PBSS4130QA. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Our broad package range provides maximum flexibility Very small 2 Pins Ultra small DSN0603-2 3 Pins SOT883B (SOT883) 4/5 Pins 1.0 x 0.6 x 0.37 (SOT1215) (SOT1194) Medium power SOD323F SOD323 SOD123F SOD123W SOD128 1.7 x 1.25 x 0.7 1.7 x 1.25 x 0.95 2.6 x 1.6 x 1.1


    Original
    DSN0603-2 OT883B) OT883) OT1215) OD323F OD323 OD123F OD123W OD128 OT663 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB350UPE DFN1010D-3 OT1215) PDF

    bc807

    Abstract: No abstract text available
    Text: '  BC807-25QA; BC807-40QA ' 1  45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible


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    BC807-25QA; BC807-40QA DFN1010D-3 OT1215) BC807-25QA BC817-25QA BC817-40QA bc807 PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB56EN DFN1010D-3 OT1215) PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB75UPE DFN1010D-3 OT1215) PDF

    NXP date code marking

    Abstract: a/NXP date code marking
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB65UPE DFN1010D-3 OT1215) NXP date code marking a/NXP date code marking PDF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB65UPE DFN1010D-3 OT1215) PDF

    BC817

    Abstract: No abstract text available
    Text: '  BC817-25QA; BC817-40QA ' 1  45 V, 500 mA NPN general-purpose transistors Rev. 1 — 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original
    BC817-25QA; BC817-40QA DFN1010D-3 OT1215) BC817-25QA BC807-25QA BC807-40QA BC817 PDF

    NXP date code marking

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original
    PMXB43UNE DFN1010D-3 OT1215) NXP date code marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Package outline DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body: 1.1 x 1.0 x 0.37 mm SOT1215 visible depend upon used manufacturing technology 2x solderable lead end, protrusion max. 0.02 mm (3x) pin 1 index area


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    DFN1010D-3: OT1215 sot1215 PDF