Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged LDMOST ceramic package; 4 leads SOT1214B D A F C D1 U1 H1 w2 1 H c C 2 E1 U2 E 4 3 b w3 Q e 5 10 mm scale Dimensions Unit 1 b c max 4.72 nom min 3.43 6.17 0.15 20.02 19.96 5.92 0.08 19.61 19.66 max 0.187 inches nom min 0.135
|
Original
|
OT1214B
sot1214b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1214A D A F D1 U1 B q C H1 w2 1 p U2 H c C 2 E1 E 5 A w1 4 3 b A B w3 Q e 5 10 mm scale Dimensions Unit 1 A max 4.72 nom min 3.43 mm b c D D1 6.17 0.15 20.02 19.96 5.92 0.08 19.61 19.66
|
Original
|
OT1214A
sot1214a
|
PDF
|
sot979
Abstract: No abstract text available
Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)
|
Original
|
OT975B
OT538A
OT1227A
OT975C
OT1227B
OT467B
OT467C
OT1228A
OT1228B
OT608A
sot979
|
PDF
|
UT-090C-25
Abstract: No abstract text available
Text: BLF174XR; BLF174XRS Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information
|
Original
|
BLF174XR;
BLF174XRS
2002/95/EC,
BLF174XR
UT-090C-25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLF574XR; BLF574XRS Power LDMOS transistor Rev. 1 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the
|
Original
|
BLF574XR;
BLF574XRS
BLF574
BLF574XR
|
PDF
|
BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
|
Original
|
|
PDF
|
BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 2 — 5 March 2014 Preliminary data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
|
Original
|
BLF184XR;
BLF184XRS
2002/95/EC,
BLF184XR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 3 — 1 April 2014 Product data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information
|
Original
|
BLF184XR;
BLF184XRS
2002/95/EC,
BLF184XR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLF18xXR S 50 V LDMOS RF power transistors NXP’s eXtremely Rugged family: unsurpassed future-proof performance Our latest 50 V LDMOS portfolio brings you the answer to higher output power and simplified design-in for demanding RF systems. NXP’s innovative 50 V XR ‘eXtremely
|
Original
|
BLF18xXR
OT1214
OT539
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 2 — 27 February 2014 Preliminary data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
|
Original
|
BLF184XR;
BLF184XRS
2002/95/EC,
BLF184XR
|
PDF
|
BLF184XR
Abstract: 001aan207 blf184xrs SOT1214B sot1214 BLF184
Text: BLF184XR; BLF184XRS Power LDMOS transistor Rev. 1 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description A 650 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information
|
Original
|
BLF184XR;
BLF184XRS
2002/95/EC,
BLF184XR
001aan207
blf184xrs
SOT1214B
sot1214
BLF184
|
PDF
|
