Untitled
Abstract: No abstract text available
Text: NVA4153N, NVE4153N Small Signal MOSFET 20 V, 952 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate AEC−Q101 Qualified and PPAP Capable
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NVA4153N,
NVE4153N
NTA4153N/D
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NTA4151
Abstract: marking TN NTA4151P, NTE4151P
Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package
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NTA4151P,
NTE4151P
SC-75,
SC-89
SC-75
NTA4151P/D
NTA4151
marking TN
NTA4151P, NTE4151P
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Untitled
Abstract: No abstract text available
Text: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package
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NTA4151P,
NTE4151P
SC-75,
SC-89
SC-75
NTA4151P/D
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BZT 030
Abstract: XXt sot363 THT bsc 25 TE MARKING CODE 6-PIN sc70-6 marking xH T9T marking 9T MARKING CODE SOT353 xz sot-23 blf 178
Text: CASE OUTLINES AND PACKAGE DIMENSIONS TO−92 TO−226 CASE 29−11 ISSUE AL DATE 03/07/2000 SCALE 1:1 A NOTES: X. DIMENSIONING/AND/TOLERANCING/PER/ANSI YXp.fM6/X9lo. o. CONTROLLING/DIMENSION:/INCH. b. CONTOUR/OF/PACKAGE/BEYOND/DIMENSION/R IS/UNCONTROLLED.
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O-226)
SC-88/SC70-6/SOT-363
BZT 030
XXt sot363
THT bsc 25
TE MARKING CODE 6-PIN
sc70-6 marking xH
T9T marking
9T MARKING CODE SOT353
xz sot-23
blf 178
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FP6131
Abstract: FP6131-33GS3P FP6131-30GS FP6131-33GS FP6131-15GS3 capacitor 100 FP613133GS3P SOT23 1UF SOT-89 code BF
Text: FP6131 fitipower integrated technology lnc. 300mA Low Dropout Linear Regulator Description Features The FP6131 series are low dropout, positive linear regulators with very low quiescent current. The FP6131 can supply 300mA output current with a low dropout voltage at about 250mV.
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FP6131
300mA
FP6131
250mV.
250mV
FP6131-33GS3P
FP6131-30GS
FP6131-33GS
FP6131-15GS3
capacitor 100
FP613133GS3P
SOT23 1UF
SOT-89 code BF
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ntk3139pt1h
Abstract: No abstract text available
Text: NTK3139P Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com P−channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC−89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating
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NTK3139P
OT-723
SC-89
NTK3139P/D
ntk3139pt1h
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mb95f128jb
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12610-2E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95120MB series MB95F124MB/F124NB/F124JB/F126MB/F126NB/ MB95F126JB/F128MB/F128NB/F128JB/FV100D-103 • DESCRIPTION The MB95120MB series is general-purpose, single-chip microcontrollers. In addition to a compact instruction set,
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DS07-12610-2E
MB95120MB
MB95F124MB/F124NB/F124JB/F126MB/F126NB/
B95F126JB/F128MB/F128NB/F128JB/FV100D-103
16-bit
F0612
mb95f128jb
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DS07-37-27S-13-059 V0
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12616-2E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95120 series MB95F128D/FV100D-101 • DESCRIPTION The MB95120 series is general-purpose, single-chip microcontrollers. In addition to a compact instruction set,
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DS07-12616-2E
MB95120
MB95F128D/FV100D-101
16-bit
DS07-37-27S-13-059 V0
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS07-12616-3E 8-bit Proprietary Microcontrollers CMOS F2MC-8FX MB95120 series MB95F128D/FV100D-101 • DESCRIPTION The MB95120 series is general-purpose, single-chip microcontrollers. In addition to a compact instruction set,
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DS07-12616-3E
MB95120
MB95F128D/FV100D-101
16-bit
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BFQ64
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings
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BFQ64
OT-89
BFQ64
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BFQ17P
Abstract: marking FD
Text: NPN Silicon RF Transistor BFQ 17P For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering code tape and reel Package BF Q 1/P FD Q 62702 - F983 SOT-89 Maximum Ratings Param eter Symbol Value Unit
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OT-89
BFQ17P
marking FD
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1SS SOT-23
Abstract: 1SS TRANSISTOR
Text: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz
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569-GS
1SS SOT-23
1SS TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: BFN 16 BFN 18 NPN Silicon High-Voltage Transistors • • • • Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Complementary types: BFN 17, BFN 19 PNP Type Marking
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Q62702-F694
Q62702-F696
Q62702-F885
Q62702-F1056
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BF 331 TRANSISTORS
Abstract: transistor BC 331 transistor Bf 331 transistor BF 606 on TRANSISTOR BC 187 transistor marking p-6 BC 331 Transistor marking code SJ transistors bc238c
Text: TELEFUNKEN ELECTRONIC Ö1C T> • Ö ^ O O R b 0005330 2 ■ ALlSG BFX89 TiHitPüUNliKiM] electronic T -sr-sr Creativo Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General, up to the GHz range Feature»: • Power gain 7 dB Dimensions In mm
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BFX89
569-GS
BF 331 TRANSISTORS
transistor BC 331
transistor Bf 331
transistor BF 606
on TRANSISTOR BC 187
transistor marking p-6
BC 331 Transistor
marking code SJ transistors
bc238c
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F884
Abstract: sot-89 MARKING CODE DG
Text: PNP Silicon High-Voltage Transistors B FN 17 B FN 19 Suitable fo r video o u tp u t stages in TV sets and sw itch in g p o w e r supplies High breakdow n voltage L o w c o lle c to r-e m itte r saturation voltage C om plem entary typ e s: BFN 16, BFN 18 NPN
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62702-F695
Q62702-F697
62702-F884
62702-F1057
F884
sot-89 MARKING CODE DG
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Untitled
Abstract: No abstract text available
Text: 32E D • 02 3b 32G 001bñ43 7 ■ NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SIP BFN16 BFN18 T - 3 Í- 2 3 SEMICONDS . • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage
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BFN16
BFN18
Q62702-F694
Q62702-F696
Q62702-F885
Q62702-F1056
T-31-23
fl23t
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Untitled
Abstract: No abstract text available
Text: NPN Silicon High Voltage Transistor BF 622 Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: B F 623 PNP Type Marking Ordering code for versions in bulk Ordering code lor
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Q62702-F568
Q62702-F1052
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f585
Abstract: bfn21 62702-F585 transistor sl 431
Text: PNP Silicon High-Voltage Transistor • • • • • BFN 21 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BFN 20 NPN Type Marking
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62702-F585
62702-F1059
f585
bfn21
62702-F585
transistor sl 431
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Untitled
Abstract: No abstract text available
Text: BSE D • Ö 53ti320 GG lb75S ' PNP Silicon High Voltage Transistor I S IP SIEMENS/ SPCLt SEMICONDS • • • • • Suitable for video output stages in TV sets High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BF 622 NPN
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53ti320
lb75S
Q62702-F567
Q62702-F1053
103mA
23b32Q
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Untitled
Abstract: No abstract text available
Text: NPN Silicon High-Voltage Transistor _ 32E D • Ö53b320 G O lbö S l b T - 3 /- A 3 BFN 20 I S IP SIEMENS/ SPCL-. SEMICONDS • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage
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53b320
Q62702-F584
Q62702-F1058
23b320
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bf 333 transistor
Abstract: bf 331 transistor Bf 331
Text: PNP Silicon High Voltage Transistor • • • • • BF 623 Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BF 622 NPN Type Marking Ordering code for versions in bulk
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Q62702-F567
Q62702-F1053
bf 333 transistor
bf 331
transistor Bf 331
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Untitled
Abstract: No abstract text available
Text: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage
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23b320
BF622
Q62702-F568
Q62702-F1052
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abe 429
Abstract: sot-89 MARKING CODE BN BFN21 ABE 427 bfn20
Text: BFN20 NPN Silicon High-Voltage Transistor • • • • • Suitable fo r video o u tp u t stages in TV sets and sw itch in g p ow er supplies High breakdow n voltage Low co lle c to r-e m ltte r saturation voltage Low capacitance C om plem entary type'. BFN 21 PNP
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BFN20
62702-F584
62702-F1058
abe 429
sot-89 MARKING CODE BN
BFN21
ABE 427
bfn20
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TRANSISTOR BI 187
Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Text: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage
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BUV71
T0126
15A3DIN
TRANSISTOR BI 187
sot-23 npn marking code cr
TRANSISTOR BC 187
BUV71
bc 187 npn transistor
TRANSISTOR BI 237
on BC 187 TRANSISTOR
telefunken ta 750
12A3
T0126
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