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    SOT-8 MARKING SC Search Results

    SOT-8 MARKING SC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-8 MARKING SC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DN4 Diode Termination Network / ESD Suppressor Schematic 4 3 1 2 Package SOT-143 Marking “ DN4 “ o Absolute Maximum Ratings: ( Ta = 25 C ) Symbol Parameter Value Units TJ Operating Temperature -40 to +85 C WV Supply Voltage 8 V IF DC Forward Current


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    PDF OT-143) OT143

    CDA4S14L

    Abstract: 8kv 1MHz DIODE electronic schematic
    Text: Diode Network / ESD Suppressor COMCHIP www.comchiptech.com CDA4S14L Voltage: 8 Volts Current: 50 mA Package SOT-143 Feature Marking “ CDA4 “ This diode network is designed to provide two channels for active termination of highspeed data signals to eliminate signal


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    PDF CDA4S14L OT-143) MDS0903003A CDA4S14L 8kv 1MHz DIODE electronic schematic

    transistor B3 OF

    Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


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    PDF KSC2883 KSA1203 OT-89 KSC2883 transistor B3 OF B3 transistor KSA1203 B3 marking transistor

    CDA8

    Abstract: No abstract text available
    Text: COMCHIP Diode Network / ESD Suppressor www.comchiptech.com CDA8S03L Voltage: 8 Volts Current: 50 mA Package SOT-23 Feature Marking “ CDA8 “ This diode network is designed to provide an integrated solution for the active termination of a single high-speed data signal to eliminate


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    PDF CDA8S03L OT-23) MDS0903007A CDA8

    Untitled

    Abstract: No abstract text available
    Text: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


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    PDF KSC2883 KSA1203 OT-89 KSC2883

    Si1305DL

    Abstract: No abstract text available
    Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code


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    PDF Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99

    P-Channel 1.8-V G-S MOSFET sot-323

    Abstract: Si1305DL
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability


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    PDF Si1305DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 P-Channel 1.8-V G-S MOSFET sot-323

    MARKING CODE LB

    Abstract: SI1305DL
    Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code


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    PDF Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99 MARKING CODE LB

    99399

    Abstract: SI1305DL
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


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    PDF Si1305EDL OT-323 SC-70 09-Nov-99 99399 SI1305DL

    Si1305DL

    Abstract: ams330
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


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    PDF Si1305EDL OT-323 SC-70 18-Jul-08 Si1305DL ams330

    Si1305DL

    Abstract: Tr431
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


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    PDF Si1305EDL OT-323 SC-70 08-Apr-05 Si1305DL Tr431

    SI1405DL

    Abstract: No abstract text available
    Text: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


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    PDF Si1405DL OT-363 SC-70 S-99229--Rev. 08-Nov-99

    Si1405DL

    Abstract: 8 A diode A.4 SOT363 MARKING
    Text: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


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    PDF Si1405DL OT-363 SC-70 S-01560--Rev. 17-Jul-00 8 A diode A.4 SOT363 MARKING

    Si1405DL

    Abstract: A4V4
    Text: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


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    PDF Si1405DL OT-363 SC-70 A4V4

    RB425D

    Abstract: No abstract text available
    Text: RB425D SOT-23-3L Schottky barrier Diodes + FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 8 0¡ À0 . 05 1 . 6 0¡ À0. 0 5 0. 35 1. 9 0. 95¡ À0. 025 1. 02 + 2. 92¡ À0. 05 RB425D - Marking: D3L


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    PDF RB425D OT-23-3L 100mA RB425D

    Untitled

    Abstract: No abstract text available
    Text: Si1305 Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = -4.5 V -0.92 0.380 @ VGS = -2.5 V - 0.79 0.530 @ VGS = -1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability and Date Code


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    PDF Si1305 OT-323 SC-70 S-22380--Rev. 30-Dec-02

    Si1405DL

    Abstract: SOT363
    Text: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code


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    PDF Si1405DL OT-363 SC-70 18-Jul-08 SOT363

    BAV170

    Abstract: JXs sot
    Text: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170


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    PDF BAV170 Q62702-A920 BAV170 100ns JXs sot

    marking code vishay SILICONIX

    Abstract: ic 71074
    Text: SÌ1407DL Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS(V) -1 2 Id (A) •"DS(on) ( ß ) 0.130 @ VG S = -4 .5 V -1 .8 0.170 @ VGS = -2 .5 V -1 .5 0.225 @ VGs = -1 .8 V -1 .3 \V SOT-363 SC-70 (6-LEADS) Marking Code OC xx £ Lot Traceability


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    PDF 1407DL OT-363 SC-70 150cC S-01561-- 17-Jul-00 marking code vishay SILICONIX ic 71074

    Q62702-A615

    Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
    Text: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage


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    PDF Q62702-A615 Q62702-A704 Q62702-A615 marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING

    BAR99

    Abstract: marking jg
    Text: Silicon Switching Diode • BAR 99 For high-speed switching Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BAR 99 JG Q62702-A610 Q62702-A388 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage


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    PDF Q62702-A610 Q62702-A388 BAR99 marking jg

    BH RE transistor

    Abstract: No abstract text available
    Text: PNP Silicon RF Transistor BF 569 Suitable fo r o scillators, m ixers and self-oscillating m ixer stages in UHF TV tu n ers Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 569 LH Q62702-F548 Q 62702-F869 SOT 23


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    PDF Q62702-F548 62702-F869 BH RE transistor

    Untitled

    Abstract: No abstract text available
    Text: SM405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s (V) -0 Id (A) rDS(on) (ß ) 0.125 9 VG S= -4 .5 V ± 1 .8 0.160 @ V qs = -2 .5 V ± 1 .6 0.210 @ V qs = -1 .8 v ± 1 .4 A V P V* SOT-363 SC-70 (6-LEADS) Marking Code OB


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    PDF SM405DL OT-363 SC-70 S-01560-- 17-Jul-00 SI1405DL

    Untitled

    Abstract: No abstract text available
    Text: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code


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    PDF OT-363 SC-70 S-01886-- 28-Aug-00 1901DL