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    Suzhou Novosense Microelectronics Co Ltd NSI1305M25-DSWR

    ISO C-SENSING MODULATOR
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    DigiKey NSI1305M25-DSWR Reel 1,000 1,000
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    NSI1305M25-DSWR Digi-Reel 1
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    NSI1305M25-DSWR Cut Tape 1
    • 1 $3.5
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    Vishay Siliconix SI1305DL-T1-E3

    MOSFET P-CH 8V 860MA SC70-3
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    DigiKey SI1305DL-T1-E3 Reel 3,000
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    Vishay Siliconix SI1305DL-T1-GE3

    MOSFET P-CH 8V 860MA SC70-3
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    Vishay Siliconix SI1305EDL-T1-E3

    MOSFET P-CH 8V 860MA SC70-3
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    DigiKey SI1305EDL-T1-E3 Reel 3,000
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    Vishay Intertechnologies SI1305DL-T1-E3

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    Bristol Electronics SI1305DL-T1-E3 15,607
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    SI1305 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si1305DL Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1305DL Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1305DL-DS Vishay Telefunken DS-Spice Model for Si1305DL Original PDF
    Si1305DL SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1305DL-T1 Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI1305DL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3 Original PDF
    SI1305DL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SC-70-3 Original PDF
    SI1305EDL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3 Original PDF
    SI1305EDL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3 Original PDF

    SI1305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-Channel 1.8-V G-S MOSFET sot-323

    Abstract: No abstract text available
    Text: Si1305EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V ± 0.92 0.380 at VGS = - 2.5 V ± 0.79 0.530 at VGS = - 1.8 V ± 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1305EDL 2002/95/EC OT-323 SC-70 Si1305EDL-T1-E3 Si1305EDL-T1-GE3 18-Jul-08 P-Channel 1.8-V G-S MOSFET sot-323

    Si1305DL

    Abstract: No abstract text available
    Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code


    Original     		PDF Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99

    F MARKING 6PIN

    Abstract: No abstract text available
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 11-Mar-11 F MARKING 6PIN

    9713

    Abstract: AN609 Si1305DL
    Text: Si1305DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1305DL AN609 22-Mar-07 9713

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1305EDL 18-Jul-08

    Si1305DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1305DL 18-Jul-08

    Si1305BDL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1305BDL Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1305BDL 18-Jul-08

    Si1305DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1305DL S-50151Rev. 07-Feb-05

    P-Channel 1.8-V G-S MOSFET sot-323

    Abstract: SI1305DL-T1 SI1305DL
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT


    Original     		PDF Si1305DL OT-323 SC-70 Si1305DL--T1 Si1305DL--T1--E3 S-51075--Rev. 13-Jun-05 P-Channel 1.8-V G-S MOSFET sot-323 SI1305DL-T1

    Si1305DL

    Abstract: vishay MOSFET code marking
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 11-Mar-11 vishay MOSFET code marking

    P-Channel 1.8-V G-S MOSFET sot-323

    Abstract: Si1305DL
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability


    Original     		PDF Si1305DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 P-Channel 1.8-V G-S MOSFET sot-323

    Si1305DL

    Abstract: No abstract text available
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 18-Jul-08

    DATASHEET 5609

    Abstract: transistor 5609 8309 DATASHEET 5609 transistor 5609 transistor AN609
    Text: Si1305EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1305EDL AN609 08-May-07 DATASHEET 5609 transistor 5609 8309 DATASHEET 5609 transistor 5609 transistor

    Si1305DL

    Abstract: ams330
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 18-Jul-08 Si1305DL ams330

    Si1305DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1305DL 24-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: Si1305 Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = -4.5 V -0.92 0.380 @ VGS = -2.5 V - 0.79 0.530 @ VGS = -1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability and Date Code


    Original     		PDF Si1305 OT-323 SC-70 S-22380--Rev. 30-Dec-02

    Si1305DL

    Abstract: No abstract text available
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1305DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • TrenchFET Power MOSFET: 1.8 V • Material categorization:


    Original     		PDF Si1305DL OT-323 SC-70 Si1305DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4802

    Abstract: AN609 174542
    Text: Si1305BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1305BDL AN609 25-Mar-08 4802 174542

    MARKING CODE LB

    Abstract: SI1305DL
    Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code


    Original     		PDF Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99 MARKING CODE LB

    99399

    Abstract: SI1305DL
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 09-Nov-99 99399 SI1305DL

    Si1305DL

    Abstract: Si1305DL-T1
    Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT


    Original     		PDF Si1305DL OT-323 SC-70 Si1305DL--T1 Si1305DL--T1--E3 08-Apr-05 Si1305DL-T1

    Si1305DL

    Abstract: Tr431
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 08-Apr-05 Si1305DL Tr431

    SI1305DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1305DL P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-Circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si1305DL