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    SOT-6 33 PACKAGE Search Results

    SOT-6 33 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-6 33 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GaAs IC 30 dB Voltage Variable Attenuator Single Positive 3 V Control 1.7–2.5 GHz AV110-73 Features SOT-6 • Single Positive +3 V Control Voltage 0.074 1.90 mm REF. ■ 33 dB Attenuation Range @ 1.9 GHz ■ Excellent Linearity Performance


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    PDF AV110-73 5/99A

    esd protect mosfet

    Abstract: FULLY PROTECTED MOSFET ultra low igss pA mosfet TSM3464CX6
    Text: TSM3464 20V N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 21 @ VGS = 4.5V 8 25 @ VGS = 2.5V 7 33 @ VGS = 1.8V 6 Block Diagram ● Advance Trench Process Technology


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    PDF TSM3464 OT-26 TSM3464CX6 esd protect mosfet FULLY PROTECTED MOSFET ultra low igss pA mosfet

    AV110-73

    Abstract: No abstract text available
    Text: Preliminary GaAs IC 30 dB Voltage Variable Attenuator Single Positive 3 V Control 1.7–2.5 GHz AV110-73 Features SOT-6 • Single Positive 3 V Control Voltage 0.074 1.90 mm REF. ■ 33 dB Attenuation Range @ 1.9 GHz ■ Excellent Linearity Performance 0.126 (3.20 mm)


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    PDF AV110-73 AV110-73 10/99A

    MARKING D12

    Abstract: N-Channel mosfet sot-26
    Text: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●


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    PDF TSM3446 OT-26 TSM3446CX6 OT-26 MARKING D12 N-Channel mosfet sot-26

    marking pa sot-26

    Abstract: n-channel mosfet transistor ultra low igss pA TSM3446
    Text: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●


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    PDF TSM3446 OT-26 TSM3446CX6 marking pa sot-26 n-channel mosfet transistor ultra low igss pA TSM3446

    y parameter of mosfet

    Abstract: TSM3446 marking pa sot-26
    Text: TSM3446 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●


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    PDF TSM3446 OT-26 TSM3446CX6 y parameter of mosfet TSM3446 marking pa sot-26

    TSM3462

    Abstract: TSM3462CX6
    Text: TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.0 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Block Diagram ● Advance Trench Process Technology


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    PDF TSM3462 OT-26 TSM3462CX6 TSM3462

    Untitled

    Abstract: No abstract text available
    Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology


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    PDF TSM6988D OT-26 TSM6988DCX6

    4800 mosfet

    Abstract: esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800
    Text: TSM6988D 20V Dual N-Channel MOSFET w/ESD Protected PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Gate 2 6. Source 2 2. Drain 5, Drain 3. Gate 1 4. Source 1 20 Features ID (A) 25 @ VGS = 4.5V 5.4 33 @ VGS = 2.5V 4.3 Block Diagram ● Advance Trench Process Technology


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    PDF TSM6988D OT-26 TSM6988DCX6 4800 mosfet esd protect mosfet sot 26 Dual N-Channel MOSFET f 0472 N-Channel MOSFET TSM6988D mosfet 4800

    sot-23 Marking 27A E

    Abstract: SOT-23 5A6 marking 5A6 SOT23 marking 33a sot23 6A2 SOT-23 sot-23 MARKING CODE 26 marking code "20A" packages sot23 SZMMBZ6 18a sot-23 marking sot-23 body marking AC
    Text: MMBZxxxALT1 Series, SZMMBZxxxALT1G Series 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com SOT−23 Dual Common Anode Zeners for ESD Protection 1 Features • SOT−23 Package Allows Either Two Separate Unidirectional • •


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    PDF OT-23 sot-23 Marking 27A E SOT-23 5A6 marking 5A6 SOT23 marking 33a sot23 6A2 SOT-23 sot-23 MARKING CODE 26 marking code "20A" packages sot23 SZMMBZ6 18a sot-23 marking sot-23 body marking AC

    B0679

    Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52


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    PDF BST52 BSP52 MPSA28 2S01698 2S01697 2S01699 BC879 B0679 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879

    DS1669-100

    Abstract: TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S
    Text: ORDERING INFORMATION DEVICE DS0621–SDK DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC 14–Pin DIP


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    PDF DS0621 DS1000 DS1000 DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1669-100 TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S

    SOT23 MARKING CODE 8G

    Abstract: 8C SOT-23 ON Semiconductor marking 81M marking code 81R MMBZ5221BLT1 MMBZ5222BL MMBZ5223BL MMBZ5224BL MMBZ5225BL MMBZ5227BL
    Text: MMBZ5221BLT1 Series Preferred Device Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well


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    PDF MMBZ5221BLT1 OT-23 SOT23 MARKING CODE 8G 8C SOT-23 ON Semiconductor marking 81M marking code 81R MMBZ5222BL MMBZ5223BL MMBZ5224BL MMBZ5225BL MMBZ5227BL

    DS1425L-F5

    Abstract: rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S
    Text: ORDERING INFORMATION DEVICE DS0621–SDK DS0630 DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC


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    PDF DS0621 DS0630 DS1000 DS1000 DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1425L-F5 rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S

    MARKING 313 sot-23

    Abstract: No abstract text available
    Text: MMBZ5221BLT1 Series Preferred Device Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well


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    PDF MMBZ5221BLT1 OT-23 MARKING 313 sot-23

    Untitled

    Abstract: No abstract text available
    Text: SPECDIL AS D series SPECDILAS SPECDILAS D-XXXX DFB lasers for spectroscopy Distributed Feedback diode laser with exact match to any customer specified wavelength hermetically sealed subcomponent, SOT 5.6 package, window AR coated and tilted available for following wavelength range λ: 1200 – 1580 nm


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well


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    PDF MMBZ52xxBLT1G SZMMBZ52xxBLT1G MMBZ5221BLT1/D

    MMBZ5232BLT1G

    Abstract: AP 494 Application Note MMBZ5261BLT1G
    Text: MMBZ52xxBLT1G Series, SZMMBZ52xxBLT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well


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    PDF MMBZ52xxBLT1G SZMMBZ52xxBLT1G OT-23 MMBZ5221BLT1/D MMBZ5232BLT1G AP 494 Application Note MMBZ5261BLT1G

    transistor c33

    Abstract: umt31 "device marking" c33 marking C33 8358M
    Text: NPN VHF/UHF transistor Die no. C-33 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm UMT3 Features available in a UMT3 (UMT, SOT-323) package, see page 300 1 .3 ± Q . I 0 .6 5 0 .6 5 small output capacitance, C ob = 1.5 pF (max) at V CB = 10 V


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    PDF OT-323) UMT918 transistor c33 umt31 "device marking" c33 marking C33 8358M

    uPC2710TB

    Abstract: AGS SOT363
    Text: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • HIGH GAIN: 33 dB TYP • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: Vcc = 4.5 to 5.5 V


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    PDF UPC2710TB OT-363 UPC2710T, UPC2710TB-E3 24-Hour AGS SOT363

    Voltage Controlled Attenuator

    Abstract: AV110-73
    Text: I GaAs 1C 30 dB Voltage Variable Attenuator Single Positive 3 V Control 1.7-2.5 GHz 11*j:£§ •i'x/ ESAlpha A V 110-73 Features SOT-6 Single Positive 3 V Control Voltage 0.074 1.90 mm REF. 33 dB Attenuation Range @ 1.9 GHz r i 1 PIN 6 - Excellent Linearity Performance


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    PDF AV110-73 AV110-73 10/99A Voltage Controlled Attenuator

    Untitled

    Abstract: No abstract text available
    Text: .060" NPN Phototransistors VTT1131, 3 2 , 33 TO-46 Lensed Package E G & G VACTEC T -4 Î-6 1 PACKAGE D IM EN SIO N S inch mm .206 (5 .2 3 ) •50 ( 12.7 ) 205 ( 5 .21) CASE 3 TO-46 HERMETIC (LENSED) CHIP TYPE: SOT ABSOLUTE M AXIMUM RATINGS fl PRODUCT DESCRIPTION


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    PDF VTT1131, VTT1131 VTT1132 VTT1133

    bdx340

    Abstract: bdw 34 a mj 1001 6282 TIP-142 2N6284 BDV65 BDW93
    Text: r 7z#j ^ SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RÆoæ moi(gra(M[](gs POWER BIPOLAR EPITAXIAL BASE HIGH GAIN DARLINGTONS (Continued •c v CBO v CEO ptot Package Ty pe N PN h FE <C 1 VCE v C Esat lc ' 'B PNP m in (A) (V) (V) (W) 8 8 8 8 8 8 8 8 8 8 8


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    PDF 2N6284 bdx340 bdw 34 a mj 1001 6282 TIP-142 BDV65 BDW93

    BUT11AX

    Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
    Text: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS High-voltage and switching NPN power transistors HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS type number package 42 18 40 50 BUX86P BUX84F BUX84 BUW84 SOT82 SOT 186 TO-220AB SOT82 20 32


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    PDF BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F BUT11 BUT211 BUW11 BUT18 BUT11AX TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df