TSM3462
Abstract: TSM3462CX6
Text: TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.0 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Block Diagram ● Advance Trench Process Technology
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TSM3462
OT-26
TSM3462CX6
TSM3462
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6.2Y
Abstract: No abstract text available
Text: T A IW A N TSM3462 % S E M IC O N D U C T O R pb: COMPLÌANCE RoHS 20V N-Channei MOSFET PRO DUCT S JM M A R Y S O T-26 654 P in D e fin itio n : V o s (V 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source 20 1 23 F ea tu res F W rfm Q ) Id ( A ) 3 3 @ V CS = 4.5V
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TSM3462
3462C
6.2Y
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TSM3462CX6
Abstract: marking code pa sot-26 M3462
Text: S TSM3462 T A IW A N S E M IC O N D U C T O R 20V N-Channei MOSFET pb RoHS COMPLIANCE PRO DUCT S JM M A R Y S 0 T -2 e 854 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS (V ) 20 1 23 Features F W )(m Q ) Id ( A ) 3 3 @ V CS = 4.5V
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M3462
OT-26
TSM3462CX6
marking code pa sot-26
M3462
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Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR S TSM3462 20V N-Channel MOSFET pb: RoHS \^ COMPLÌANGE y PRO DUCT S JM M A R Y S O T -2 6 654 Pin D efinition: V o s (V 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source 20 1 23 F ea tu res F W rfm Q ) Id ( A ) 3 3 @ V CS = 4 .5 V
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TSM3462
3462C
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