6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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PDF
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VPS05604
Abstract: bfs 11
Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363
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Original
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VPS05604
EHA07196
OT-363
Oct-25-1999
VPS05604
bfs 11
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PDF
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transistor marking 7D
Abstract: MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G
Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with
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MUN5211DW1T1G,
SMUN5211DW1T1G,
NSVMUN5211DW1T1GSeries
MUN5211DW1T1G
OT-363
MUN5211DW1T1/D
transistor marking 7D
MUN5214DW1T1G
SMUN5213DW1T1G
transistor marking code 7e
SOT363 MARKING CODE 7M
SMUN5235DW1T1G
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PDF
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MUN5233DW1T1G
Abstract: MUN5214DW1T1G mun5215dw1t1g MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G SOT363 MARKING CODE 7N
Text: MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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MUN5211DW1T1G
MUN5211DW1T1G
OT-363
MUN5211DW1T1/D
MUN5233DW1T1G
MUN5214DW1T1G
mun5215dw1t1g
MUN5212DW1T1G
MUN5213DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
SOT363 MARKING CODE 7N
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PDF
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Untitled
Abstract: No abstract text available
Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces
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Original
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MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G
MBD110DWT1/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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MUN5211DW1T1G,
SMUN5211DW1T1G,
NSVMUN5211DW1T1Gâ
MUN5211DW1T1G
MUN5211DW1T1/D
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PDF
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SMUN5211DW1T1G
Abstract: SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5211DW1T1G MUN5233DW1T1G
Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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Original
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MUN5211DW1T1G,
SMUN5211DW1T1G,
NSVMUN5211DW1T1GSeries
MUN5211DW1T1G
OT-363
MUN5211DW1T1/D
SMUN5211DW1T1G
SMUN5235DW1T1G
SMUN5214DW1T1G
NSVMUN5212
MUN5214DW1T1G
SMUN5233DW1T1G
MUN5233DW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Symbol Value Unit Collector-Emitter Voltage Rating VCEO – 300 Vdc Collector-Base Voltage
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BF721T1
318E-04,
O-261AA)
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PDF
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SC-70ML
Abstract: marking CER 5-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 BASE 1 NPN SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage
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Original
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BF720T1
318E-04,
O-261AA)
SC-70ML
marking CER 5-pin
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PDF
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H5 MARKING
Abstract: marking 12 SOT-363 amplifier
Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces
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Original
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MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G
OT-363
OT-23
SC-88
H5 MARKING
marking 12 SOT-363 amplifier
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PDF
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MBD110DW
Abstract: MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise
Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and
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Original
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MBD110DWT1G,
MBD330DWT1G,
MBD770DWT1G
OT-363
OT-363
OT-23
MBD110DWT1/D
MBD110DW
MBD110DWT1G
MBD330DW
MBD330DWT1G
MBD770DW
MBD770DWT1G
MMBD101LT1
MMBD301LT1
MMBD701LT1
SOT 363 marking code 06 low noise
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PDF
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SOT363 MARKING 3B
Abstract: No abstract text available
Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is
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BC856BDW1T1G,
SBC856BDW1T1GSeries,
BC857BDW1T1G,
SBC857BDW1T1GSeries,
BC858CDW1T1G
OT-363/SC-88
AEC-Q101
BC856,
SBC856
SOT363 MARKING 3B
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PDF
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SMUN5113DW1T1G
Abstract: SMUN5111DW1T1G SOT 363 marking 67 MUN5114DW1T1G
Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor
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Original
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MUN5111DW1T1G
SMUN5111DW1T1G
OT-363
SC-88
419Bble
MUN5111DW1T1/D
SMUN5113DW1T1G
SOT 363 marking 67
MUN5114DW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a
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MUN5111DW1T1G
SMUN5111DW1T1G
OT-363
MUN5111DW1T1/D
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PDF
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marking 12 SOT-363 amplifier
Abstract: marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4
Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces
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Original
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MBD110DWT1G,
MBD330DWT1G
OT-363
OT-23
SC-88
marking 12 SOT-363 amplifier
marking code 04 sot-363
SOT 363 marking code 06 low noise
SOT 363 marking CODE T4
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PDF
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SMUN5113DW1T1G
Abstract: No abstract text available
Text: MUN5111DW1T1G Series, SMUN5111DW1T1G Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor
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Original
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MUN5111DW1T1G
SMUN5111DW1T1G
MUN5111DW1T1/D
SMUN5113DW1T1G
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PDF
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MUN5111DW1T1G
Abstract: MUN5112DW1T1G MUN5113DW1T1G MUN5114DW1T1G MUN5115DW1T1G MUN5116DW1T1G MUN5130DW1T1G MUN5131DW1T1G
Text: MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor
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Original
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MUN5111DW1T1G
OT-363
MUN5111DW1T1/D
MUN5112DW1T1G
MUN5113DW1T1G
MUN5114DW1T1G
MUN5115DW1T1G
MUN5116DW1T1G
MUN5130DW1T1G
MUN5131DW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces
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Original
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MBD110DWT1G,
MBD330DWT1G
MBD110DWT1/D
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PDF
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SBC857B
Abstract: BC856BDW1T1G BC857BDW1T1G SBC857CDW1T1G bc857 sot363 BC557 SBC856 SBC856BDW1T1G SBC857BDW1T1G marking 12 SOT-363 amplifier
Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier
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Original
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BC856BDW1T1G,
SBC856BDW1T1GSeries,
BC857BDW1T1G,
SBC857BDW1T1GSeries,
BC858CDW1T1G
OT-363/SC-88
AEC-Q101
BC856,
SBC856
SBC857B
BC856BDW1T1G
BC857BDW1T1G
SBC857CDW1T1G
bc857 sot363
BC557
SBC856BDW1T1G
SBC857BDW1T1G
marking 12 SOT-363 amplifier
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PDF
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BC856
Abstract: BC857BDW1T1G
Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier
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Original
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BC856BDW1T1G,
SBC856BDW1T1Gâ
BC857BDW1T1G,
SBC857BDW1T1Gâ
BC858CDW1T1G
363/SCâ
BC856,
SBC856
BC856BDW1T1/D
BC856
BC857BDW1T1G
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon BF393 COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 300 Vdc Collector – Base Voltage VCBO 300 Vdc Emitter – Base Voltage
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Original
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BF393
226AA)
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PDF
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Untitled
Abstract: No abstract text available
Text: That HEW LETT W L E M PACKARD 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-51063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking QNPifTT Til • Ultra-Miniature Package • Internally Biased, Single 5 V
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OCR Scan
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INA-51063
OT-363
SC-70)
OT-363
OT-143
5965-9680E
MM475
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PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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OCR Scan
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
|
PDF
|
SOT 363 marking code 62 low noise
Abstract: bf362 bc238c
Text: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages
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OCR Scan
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Q00S201
569-GS
SOT 363 marking code 62 low noise
bf362
bc238c
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PDF
|
