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    SOT-23-6 MARKING 017 Search Results

    SOT-23-6 MARKING 017 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23-6 MARKING 017 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23-5 marking code

    Abstract: sot 23-5 marking code laser Functional Block Diagram and Datasheet low voltage detector on semiconductor marking code sot "Voltage Detector" Code sot-23 on semiconductor SOT-89-3 marking sot 5 pin sot-23 Marking Mb
    Text: VOLTAGE DETECTOR TC44 Series Series TC44 VOLTAGE DETECTOR FEATURES • ■ ■ ■ ■ GENERAL DESCRIPTION Precise Detection Thresholds . Standard ±2.5% Small Packages . SOT-23A-5 Surface Mount SOT-89-3 Surface Mount TO-92 Thru-hole Package


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    PDF OT-23A-5 OT-89-3 SC-74A) OT-89-3 sot-23-5 marking code sot 23-5 marking code laser Functional Block Diagram and Datasheet low voltage detector on semiconductor marking code sot "Voltage Detector" Code sot-23 on semiconductor SOT-89-3 marking sot 5 pin sot-23 Marking Mb

    MARUWA CAPACITORS "H series"

    Abstract: transistor "micro-x" "marking" 3 Micro-X Marking E
    Text: ECG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz


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    PDF ECG002 OT-89 OT-363 ECG002 29dBm 1000MHz. AP-000487-000 AP-000515-000 MARUWA CAPACITORS "H series" transistor "micro-x" "marking" 3 Micro-X Marking E

    SOT23 marking VA

    Abstract: mlx90242ese 90242 4 pin SMD hall sensor 90242ESO-BC03 smd code F hall effect analog hall smd 4 pin TC680
    Text: MLX90242 Linear Hall Effect Sensor Features and Benefits • • • • • Quad Switched Hall Plate / Chopper Stabilized Amplifier Ratiometric Output for A/D Interface Low Quiescent Voltage Thermal Drift Small Plastic Packages TSOT, 4-SIP-VA, TO-92 RoHS compliant TSOT package


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    PDF MLX90242 MLX90242LUA-CC03 MLX90242LVA-CC03 MLX90242ESE-BC03 MLX90242ESE-CC03 1300G) 90242ESO-BC03: 23Jan04 26Jan04 4Mar04 SOT23 marking VA mlx90242ese 90242 4 pin SMD hall sensor 90242ESO-BC03 smd code F hall effect analog hall smd 4 pin TC680

    diode 2929

    Abstract: No abstract text available
    Text: SLVU2.8 APPLICATIONS ü ü ü ü ü ü Ethernet 10/100 Base T Cellular phone base stations Switching stations Video inputs PC servers Handheld electronics IEC COMPATIBILITY EN61000-4 ü ü ü 61000 - 4 - 2 (ESD): Air - 15kv, Contact – 8kv 61000 - 4 - 4 (EFT): 40A – 5/50ns


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    PDF EN61000-4) 5/50ns OT-23 OT-23 diode 2929

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


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    PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000

    JESD22-A108-A

    Abstract: No abstract text available
    Text: SCG002 DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6000 MHz 20 dB Gain at 1000 MHz 15 dBm Output P1dB at 1000 MHz 29 dBm Output IP3 at 1000 MHz 3.8 dB Noise Figure at 2000 MHz


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    PDF SCG002 OT-89 SCG002B AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 JESD22-A108-A

    014e1

    Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018

    mje 1303

    Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X

    BJT BF 331

    Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


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    PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    A7922

    Abstract: No abstract text available
    Text: TQP3M9009 High Linearity LNA Gain Block Applications • • • • Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT- 89 Package Product Features • • • • • • • • • Functional Block Diagram


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    PDF TQP3M9009 OT-89 TQP3M9009 A7922

    EB202

    Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
    Text: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF


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    PDF SG46/D EB202 AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER

    ASM2I2318ANZ

    Abstract: No abstract text available
    Text: ASM2I2318ANZ June 2005 rev 0.3 18 Output, 3.3V SDRAM Buffer for Desktop PCs with 3 DIMMs Functional Description Features ƒ One input to 18 output Buffer/Driver The ASM2I2318ANZ is a 3.3V buffer designed to distribute ƒ Supports up to four SDRAM DIMMs high-speed clocks in PC applications. The part has 18


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    PDF ASM2I2318ANZ ASM2I2318ANZ 133MHz,

    SI3016

    Abstract: No abstract text available
    Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D D D D D D D D D D D D D D D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23,


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    PDF TMS320C54V90 SPRS165F 32bis, 22bis, 27ter 42bis SI3016

    N5222

    Abstract: QFN28 4x4 PCF0603R NTMFS4833NT1G Rcs22 N522 PCF0603 sot-23 m21 C1608C0G1H103 kcs2 datasheet
    Text: NCP5222 High Performance Dual-Channel / Two-Phase Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM The NCP5222, a fast−transient−response and high−efficiency dual−channel / two−phase buck controller with built−in gate drivers,


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    PDF NCP5222 NCP5222, NCP5222/D N5222 QFN28 4x4 PCF0603R NTMFS4833NT1G Rcs22 N522 PCF0603 sot-23 m21 C1608C0G1H103 kcs2 datasheet

    CS2A diode

    Abstract: NTMFS4833NT1G
    Text: NCP5222 High Performance Dual-Channel / Two-Phase Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM The NCP5222, a fast−transient−response and high−efficiency dual−channel / two−phase buck controller with built−in gate drivers,


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    PDF NCP5222 NCP5222, NCP5222/D CS2A diode NTMFS4833NT1G

    N5222

    Abstract: DAC ic 0808 pin diagram NTMFS4833NT1G Rcs22 ERJ3EKF1001V kcs2 datasheet NTMFS4821N QFN28 4x4 CS11 CS12
    Text: NCP5222 High Performance Dual-Channel / Two-Phase Synchronous Buck Controller for Notebook Power System http://onsemi.com MARKING DIAGRAM The NCP5222, a fast−transient−response and high−efficiency dual−channel / two−phase buck controller with built−in gate drivers,


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    PDF NCP5222 NCP5222, NCP5222/D N5222 DAC ic 0808 pin diagram NTMFS4833NT1G Rcs22 ERJ3EKF1001V kcs2 datasheet NTMFS4821N QFN28 4x4 CS11 CS12

    Untitled

    Abstract: No abstract text available
    Text: DOC.DOC_CODE NO. 14CB-000013 0013 PART NO. PART 1405-000173 CODE 0173 Introduction to the World of Transient Protection Volume II - When Volume I was printed in early 1995, our intent was to follow with two individual releases Covering the details of AVX’s


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    PDF 14CB-000013 WYD-1019

    l2938

    Abstract: 1460d5 LT1460 LT1460HCS3-3 LT1460JCS3-3 LT1460KCS3-3
    Text: LT1460 Micropower Precision Series Reference Family • ■ ■ ■ ■ ■ ■ ■ ■ Trimmed to High Accuracy: 0.075% Max Low Drift: 10ppm/°C Max Industrial Temperature Range Temperature Coefficient Guaranteed to 125°C Low Supply Current: 130µA Max LT1460-2.5


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    PDF LT1460 10ppm/ LT1460-2 dis1461 LT1634 25ppm/ LT1790 40ppm/ LT6660 l2938 1460d5 LT1460 LT1460HCS3-3 LT1460JCS3-3 LT1460KCS3-3

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


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    PDF D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download

    Si3016

    Abstract: diode sod-123 marking code l8 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE
    Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,


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    PDF TMS320C54V90 SPRS165F 32bis, 22bis, 27ter 42bis Si3016 diode sod-123 marking code l8 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE

    Si3016

    Abstract: DQ1 relay dec BLM21B102S H8 SOT-23 bav99 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE n5 s101 transistor Schottky Diode 5V 6A atx 203 relay
    Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,


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    PDF TMS320C54V90 SPRS165F 32bis, 22bis, 27ter 42bis Si3016 DQ1 relay dec BLM21B102S H8 SOT-23 bav99 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE n5 s101 transistor Schottky Diode 5V 6A atx 203 relay

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan
    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn