SOT-23-5 MARKING TF Search Results

SOT-23-5 MARKING TF Result Highlights (5)

Part	Manufacturer	Description
MKZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, SOT-23
MSZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-346
MUZ20V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, SOT-323
MKZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, SOT-23
MSZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, SOT-346

SOT-23-5 MARKING TF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TN2106ND Abstract: No abstract text available Text: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3	OCR Scan	TN2106 O-236AB* TN2106K1 OT-23: TN2106N3 TN2106ND OT-23. TN2106ND	PDF
Untitled Abstract: No abstract text available Text: Transys Electronics L I M I T E D SILICON PLANAR SWITCHING DIODE BAL99 SOT-23 3 MARKING- TF Pin Configuration 1 = NC 2 = ANODE 3 = CATHODE 1 ABSOLUTE MAXIMUM RATINGS DESCRIPTION 2 SYMBOL VALUE UNIT Continuous Reverse Voltage Peak Forward Current Total Device Dissipation FR-5 Board*	Original	BAL99 OT-23 OT-23 10K/reel gm/10K	PDF
Untitled Abstract: No abstract text available Text: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking	Original	SN7002N PG-SOT-23 SN7002N PG-SOT-23 L6327: L6433:	PDF
SSN SOT-23 Abstract: sot-23 ssn L6327 SN7002N PG-SOT-23 Text: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking	Original	SN7002N PG-SOT-23 L6327: L6433: SSN SOT-23 sot-23 ssn L6327 SN7002N PG-SOT-23	PDF
MARKING SSG SOT23 Abstract: E6327 Q67000-S063 SN7002 sot-23 Marking 7002 Text: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information	Original	OT-23 Q67000-S063 E6327 MARKING SSG SOT23 E6327 Q67000-S063 SN7002 sot-23 Marking 7002	PDF
1403 Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325 Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.	OCR Scan	MMBD1401 OT-23 MMBD1404 UMBD1403 MMBD1405 b50113D 1403 R20 marking M3325	PDF
MARKING SSG SOT23 Abstract: 7002 MARKING 7002 SSG 23 TRANSISTOR SN7002 E6327 Q67000-S063 SOT-23 marking HG sot23 7002 transistor marking 7002 Text: SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking SN 7002 60 V 0.19 A 5Ω SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063 D Tape and Reel Information	Original	OT-23 Q67000-S063 E6327 Sep-13-1996 MARKING SSG SOT23 7002 MARKING 7002 SSG 23 TRANSISTOR SN7002 E6327 Q67000-S063 SOT-23 marking HG sot23 7002 transistor marking 7002	PDF
MARKING SSG SOT23 Abstract: transistor marking 7002 TRANSISTOR 7002 marking code sSG SOT23 Text: SIEMENS SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0-8.2.0V Pin 1 Pin 2 Pin 3 ~G Type VDS b f lDS(on) Package Marking SN 7002 60 V 0.19 A 5Ü SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063	OCR Scan	OT-23 Q67000-S063 E6327 OT-23 GPS05557 MARKING SSG SOT23 transistor marking 7002 TRANSISTOR 7002 marking code sSG SOT23	PDF
Untitled Abstract: No abstract text available Text: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )	OCR Scan	Si2308DS O-236 OT-23) S-58492â 15-June-98	PDF
SI2304DS marking code SOT-23 Abstract: A4* marking code A4 MARKING CODE Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )	OCR Scan	2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE	PDF
transistor bc 237c Abstract: 629t Text: ii TELEFUNKEN ELECTRONIC : 1 ?E D • ô 'të O O 'ib DOCHbCH S 627T •S 628T- S 629T TftKUKFOiMKIlK] electronic C rttb ve 1êeftnotog*e$ T -3 3 -O S' Silicon NPN Epitaxial Planar Power Transistors Applications: General at high supply voltages Features: • High reverse voltages	OCR Scan	15A3DIN E--07 transistor bc 237c 629t	PDF
TRANSISTOR BC 208 Abstract: transistor Bu 208 BU208A TRANSISTOR BC 208 B Text: TELEFUNKEN ELECTRONIC 17E T> m fl'teQtHb 000^455 IAL66 BU 208 A •¡nyHPtUJMKIMelectronic CfMtiv*Tfcchnotogw T - 33 -0} Silicon IMPN Power Transistor Applications; Horizontal deflection circuits in colour TV-receivers Features: • High reverse.voltage • Power dissipation 12.5 W	OCR Scan	IAL66 15A3DIN TRANSISTOR BC 208 transistor Bu 208 BU208A TRANSISTOR BC 208 B	PDF
transistor Bc 82 Abstract: B 722 P 12A3 BU902 T0126 transistor c s z 44 v Text: TELEFUNKEN ELECTRONIC 17E D • ô'iBDO'îb O O O W ? . TnHLtMFtLDK]BS l!?a electronic BU 902 C rta tiv e Tfccbnotoot« Silicon NPN Power Transistor r - 3 3 .-13 Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time	OCR Scan	T0126 15A3DIN transistor Bc 82 B 722 P 12A3 BU902 T0126 transistor c s z 44 v	PDF
921TS Abstract: transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T Text: TELEFUNKEN ELECTRONIC 17E I • a^SOG^b OOO^blR 5 BIALGG S 920 TS • S 922 TS ÜK1 e le c tro n ic Cre^tfwTechrtoJog*j Silicon NPN Epitaxial Planar RF Transistors ^ ^ Applications: For telephone sets, telecommunication circuits, hybrid circuits, video driver and power	OCR Scan	15A3DIN 921TS transistor BF 235 DIN41869 marking code C4 Sot 23-5 S920T	PDF

transistor BUX 44 Abstract: transistor BUX BUX87 bux86 transistor BF 414 Text: A TELEFUNKEN ELECTRONIC 17E D • 0 ^ 2 0 0 % OOb'iST? ? ■ AL66 BUX 86 - BUX 87 TTIUIFy MKIM electronic Creative Tfechnotog* * T - 2 3 - D 9 Silicon NPN Power Transistors Applications: Switching mode power supply, driver circuits Features: • in multi diffusion technique	OCR Scan	15A3DI transistor BUX 44 transistor BUX BUX87 bux86 transistor BF 414	PDF
tfk 19 Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750 Text: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)	OCR Scan	T0126 15A3DIN tfk 19 TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750	PDF
TFK diode Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3 Text: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)	OCR Scan	S1000 2/1997-0888E T0126 15A3DIN TFK diode diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3	PDF
buv48 Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92 Text: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtNTfcchootog Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique	OCR Scan	15A3DIN buv48 BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92	PDF
Transistor BC 227 Abstract: transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235 Text: TELEFUNKEN ELECTRONIC âlC D • ô'téGO'ifei 000531a *5 7 W Ê M G G CF 910 Marked with: CF1 TFitLitFdflKlKdM] electronic Creative Technologies - T = - 3 / - 2 , s r N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications:	OCR Scan	000531a 569-GS Transistor BC 227 transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235	PDF
diode B14A Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070 Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)	OCR Scan	00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070	PDF
BF960 Abstract: transistor ft 960 Text: TELEFUNKEN ELECTRONIC Ô1C D 0 1 2 0 0 % 000S530 T • ALG6 ■ r - 3 t TfEtLitFyKlKiKlelectronic ~ -5 BF 960 Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz	OCR Scan	000S530 569-GS BF960 transistor ft 960	PDF
V = Device Code Abstract: No abstract text available Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.	Original	MC74VHC1G02 353/SC V = Device Code	PDF
marking CODE W2D Abstract: marking w2d Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power	Original	MC74VHC1G126 353/SC marking CODE W2D marking w2d	PDF
V = Device Code Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS	Original	MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D	PDF

SOT-23-5 MARKING TF Search Results

SOT-23-5 MARKING TF Result Highlights (5)

SOT-23-5 MARKING TF Datasheets Context Search

TN2106ND

Untitled

Untitled

SSN SOT-23

MARKING SSG SOT23

1403

MARKING SSG SOT23

MARKING SSG SOT23

Untitled

SI2304DS marking code SOT-23

transistor bc 237c

TRANSISTOR BC 208

transistor Bc 82

921TS

transistor BUX 44

tfk 19

TFK diode

buv48

Transistor BC 227

diode B14A

BF960

V = Device Code

marking CODE W2D

V = Device Code