R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
|
Original
|
CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
|
PDF
|
STR2550
Abstract: STR1550
Text: STR2550 High voltage fast-switching PNP power transistor Preliminary data Features • Miniature SOT-23 plastic package for surface mounting circuits ■ Tape and reel packaging ■ The NPN complementary type is STR1550 3 2 1 Applications ■ SOT-23 LED driving
|
Original
|
STR2550
OT-23
STR1550
OT-23
R2550
STR2550
STR1550
|
PDF
|
SOT R23
Abstract: marking R24 2SC3356 SOT R25 r25 q
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
|
Original
|
OT-23-3L
OT-23-3L
2SC3356
width350s,
SOT R23
marking R24
2SC3356
SOT R25
r25 q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
|
Original
|
OT-23-3L
OT-23-3L
2SC3356
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current
|
Original
|
OT-23-3L
OT-23-3L
2SC3356
|
PDF
|
transistor R24
Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
Text: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
2SC3356
OT-23-3L
OT-23-3L
width350s,
transistor R24
SOT R23
npn marking r25
marking r25 transistor
marking r25 NPN
2sc3356
high power npn UHF transistor
2SC3356 R25 sot-23
|
PDF
|
FH9014
Abstract: FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16
Text: SOT-23 三极管(SOT-23 TRANSISTORS) 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C
|
Original
|
OT-23
FHT20
FHT31
FHT63
FHT64
FHT599
FHT807-16
FHT807-25
FHT807-40
FH9014
FHT9018
FHT1815G
FHT3356
FHT599
FHT63
FHT64
FHT807-16
FHT807-25
FHT817-16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
|
Original
|
2SC3356
OT-23
QW-R206-024
|
PDF
|
2SC3356
Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
|
Original
|
2SC3356
OT-23
QW-R206-024
2SC3356
marking r25 sot23
r25 marking
NPN R25
2SC3356 R25 sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking
|
Original
|
FJV3105R
FJV4105R
OT-23
|
PDF
|
BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
|
Original
|
MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
|
PDF
|
77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
|
Original
|
|
PDF
|
marking r25
Abstract: FJV3105R FJV4105R
Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking
|
Original
|
FJV3105R
FJV4105R
OT-23
marking r25
FJV3105R
FJV4105R
|
PDF
|
resistor cross reference
Abstract: marking r25 sot23 FJV3105RMTF
Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking
|
Original
|
FJV3105R
FJV4105R
OT-23
FJV4105R
OT-23
FJV3105RMTF
resistor cross reference
marking r25 sot23
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: STR2550 High voltage fast-switching PNP power transistor Datasheet - production data Features • Excellent hFE linearity up to 50 mA • Miniature SOT-23 plastic package for surface mounting circuits 3 • Tape and reel packaging 2 • The NPN complementary type is STR1550
|
Original
|
STR2550
OT-23
STR1550
OT-23
DocID022365
|
PDF
|
samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
|
Original
|
ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
|
PDF
|
NTC 503 3950
Abstract: No abstract text available
Text: NTGM Series High Accuracy NTC Thermistors Features Micro MELF glass package, saving space Fits onto SOD 323/SOT 23 footprints Fast response time High reliability and high moisture proof Wide range of operating temperature from -50℃ up to 300℃
|
Original
|
323/SOT
B0/50,
B25/50,
B25/85
00ons
3850K
3950K
B0/50
B25/50
B25/85
NTC 503 3950
|
PDF
|
5C0A
Abstract: AD1585BRTZ SOT-23 R2C SOT23 transistor R2C 3a0a transistor R1Z AD1582ARTZ AD1582 AD1582CRTZ-REEL7
Text: a 2.5 V to 5.0 V Micropower, Precision Series Mode Voltage References AD1582/AD1583/AD1584/AD1585 FUNCTIONAL BLOCK DIAGRAM 3-Lead SOT-23 RT Suffix FEATURES Series Reference (2.5 V, 3 V, 4.096 V, 5 V) Low Quiescent Current: 70 �A max Current Output Capability: �5 mA
|
Original
|
OT-23
AD158x
AD1582/AD1583/AD1584/AD1585
OT-23
AD1582/
AD1583/
AD1584/
AD1585
AD1582
AD1583/AD1585
5C0A
AD1585BRTZ
SOT-23 R2C
SOT23 transistor R2C
3a0a
transistor R1Z
AD1582ARTZ
AD1582CRTZ-REEL7
|
PDF
|
2SC3356 Application Note
Abstract: 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23
Text: 2SC3356 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 A
|
Original
|
2SC3356
OT-23
01-Jun-2002
2SC3356 Application Note
2SC3356
h 125 tam
SOT R23
marking r25 sot23
r25 q
2SC3356 R25 sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3356 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 2 BASE 1 2 1 EMITTER FEATURES SOT-23 * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
2SC3356
OT-23
10-Jan-08
OT-23
|
PDF
|
DS493
Abstract: No abstract text available
Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3
|
Original
|
2SC3356
OT-23
|
PDF
|
SMD transistor r24
Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz
|
Original
|
2SC4226
OT-23
SMD transistor r24
marking r25 sot23
R25 SMD transistor
SOT R23
SOT R25
R24 smd
Transistor R25 smd
R24 marking
NPN R25
marking r25 NPN
|
PDF
|
2SC3356 SMD
Abstract: marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25
Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain.
|
Original
|
2SC3356
OT-23
2SC3356 SMD
marking r25 sot23
NPN R25
SOT R23
Transistor R25 smd
2SC335
r25 marking
2SC3356
R24 marking DATASHEET
SMD R25
|
PDF
|