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    SOT-23 MARKING 050 TRANSISTOR Search Results

    SOT-23 MARKING 050 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING 050 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC33761

    Abstract: MC33761 D MARKING L50 SOT23-5 BRD8011/D L30 dual diode Tape and Reel Packaging Specifications BRD8011/D l30 sot 23 Low Dropout Positive marking codes LXX 05 MC33762
    Text: MC33761 Ultra Low−Noise Low Dropout Voltage Regulator with 1.0 V ON/OFF Control The MC33761 is an Low DropOut LDO regulator featuring excellent noise performances. Thanks to its innovative design, the circuit reaches an impressive 40 mVRMS noise level without an


    Original     		PDF MC33761 MC33761 OT-23 MC33761/D MC33761 D MARKING L50 SOT23-5 BRD8011/D L30 dual diode Tape and Reel Packaging Specifications BRD8011/D l30 sot 23 Low Dropout Positive marking codes LXX 05 MC33762

    Untitled

    Abstract: No abstract text available
    Text: MC33761 Ultra Low−Noise Low Dropout Voltage Regulator with 1.0 V ON/OFF Control The MC33761 is an Low DropOut LDO regulator featuring excellent noise performances. Thanks to its innovative design, the circuit reaches an impressive 40 mVRMS noise level without an


    Original     		PDF MC33761 MC33761 MC33761/D

    L03A

    Abstract: L04A L03B LP2981I-XX LP2981AI-XX C1996 LP2981 MA05A l05a l04b
    Text: LP2981 Micropower SOT 100 mA Ultra Low-Dropout Regulator General Description Features The LP2981 is a 100 mA fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications Using an optimized VIPTM Vertically Integrated PNP process the LP2981 delivers unequaled performance in all


    Original     		PDF LP2981 LP2981 OT-23 L03A L04A L03B LP2981I-XX LP2981AI-XX C1996 MA05A l05a l04b

    l01B

    Abstract: l00a L00B l02B SOT L01A marking L01B L02A marking l01b regulator marking L00B L02B
    Text: LP2980 Micropower SOT 50 mA Ultra Low-Dropout Regulator General Description Features The LP2980 is a 50 mA fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications Using an optimized VIPTM Vertically Integrated PNP process the LP2980 delivers unequaled performance in all


    Original     		PDF LP2980 LP2980 OT-23 20-3A l01B l00a L00B l02B SOT L01A marking L01B L02A marking l01b regulator marking L00B L02B

    L19a

    Abstract: 12679 L20B C1996 LP2982 MA05A LP2982AI-X
    Text: LP2982 Micropower SOT 50 mA Ultra Low-Dropout Regulator General Description Features The LP2982 is a 50 mA fixed-output voltage regulator designed to provide ultra low dropout and lower noise in battery powered applications Using an optimized VIPTM Vertically Integrated PNP process the LP2982 delivers unequaled performance in all


    Original     		PDF LP2982 LP2982 OT-23 L19a 12679 L20B C1996 MA05A LP2982AI-X

    transistor marking A9

    Abstract: A9 marking diode sot23 MARKING 33A DIODE SOT23 14a 15a 16a 17a 18a 19a 20a sot23 32BX diode MARKING CODE A9 a9 sot 23 diode diode A9 sot 23 diode A9 sot23 t894
    Text: APL5301/2 Low IQ, Low Dropout 300mA Fixed Voltage Regulator Features • • • • • Low Noise : 60uVRMS 100Hz to 100kHz Low Quiescent Current : 50uA (No load) Low Dropout Voltage : 400mV (VOUT(Nominal)=3.0V Version @300mA) Very low Shutdown Current : < 0.5uA


    Original     		PDF APL5301/2 300mA APL5301/2 300mA. 60uVRMS 260mV transistor marking A9 A9 marking diode sot23 MARKING 33A DIODE SOT23 14a 15a 16a 17a 18a 19a 20a sot23 32BX diode MARKING CODE A9 a9 sot 23 diode diode A9 sot 23 diode A9 sot23 t894

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


    Original     		PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000

    transistor marking A9

    Abstract: diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX
    Text: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features APL5501 BP 5 1 2 3 V IN GND Notebook Computer PDA or Portable Equipments Noise-Sensitive Instrumentation Systems General Description IN 1 8 OU T GND 2 7 GN D GND 3 6 GN D SHDN 4 5 BY P


    Original     		PDF APL5501/2/3 500mA 150mA OT-23-5, OT-89, OT-89-5, OT-223, O-252 O-252-5 APL5501 transistor marking A9 diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX

    014e1

    Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018

    mje 1303

    Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X

    BJT BF 331

    Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    Untitled

    Abstract: No abstract text available
    Text: MTB52N06VL Preferred Device Power MOSFET 52 Amps, 60 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTB52N06VL MTB52N06VL/D

    A11 MARKING SOT23-5

    Abstract: No abstract text available
    Text: APL5301/2 Low IQ, Low Dropout 300mA Fixed Voltage Regulator Features General Description • • The APL5301/2 series are micropower, low noise, low dropout linear regulators, which operate from 3V to 6V input voltage and deliver up to 300mA. Typical dropout voltage is only 260mV at 300mA loading. Designed for use in battery-powered system, the low 50uA


    Original     		PDF APL5301/2 300mA APL5301/2 300mA. 260mV A11 MARKING SOT23-5

    AN569

    Abstract: MTB52N06VL MTB52N06VLT4 550 SOT143 Thermal Resistance to ambient SMB Case
    Text: MTB52N06VL Preferred Device Power MOSFET 52 Amps, 60 Volts, Logic Level N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTB52N06VL r14525 MTB52N06VL/D AN569 MTB52N06VL MTB52N06VLT4 550 SOT143 Thermal Resistance to ambient SMB Case

    0118B

    Abstract: L5901 APL5901 APL5902 marking 51 "SC-62" regulator
    Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA


    Original     		PDF APL5901/2 900mA APL5901/2 OT-89, OT-89-5, OT-223, O-252 O-252-5 100Hz 0118B L5901 APL5901 APL5902 marking 51 "SC-62" regulator

    Untitled

    Abstract: No abstract text available
    Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA


    Original     		PDF APL5901/2 900mA APL5901/2 OT-89, OT-89-5, OT-223, O-252 O-252-5 100Hz

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


    Original     		PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    196325

    Abstract: LT1963-ADJ 809RL scr preregulator LT1963 LT1963EQ LT196325 lt1963-2.5 LT1963-3.3 LT1963-2
    Text: LT1963 Series 1.5A, Low Noise, Fast Transient Response LDO Regulators U FEATURES DESCRIPTIO • The LT 1963 series are low dropout regulators optimized for fast transient response. The devices are capable of supplying 1.5A of output current with a dropout voltage of


    Original     		PDF LT1963 340mV. LT1963 pro10V, LT3023 100mA, LT3024 100mA/500mA, LT3150 196325 LT1963-ADJ 809RL scr preregulator LT1963EQ LT196325 lt1963-2.5 LT1963-3.3 LT1963-2

    Untitled

    Abstract: No abstract text available
    Text: LT1963 Series 1.5A, Low Noise, Fast Transient Response LDO Regulators FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Optimized for Fast Transient Response Output Current: 1.5A Dropout Voltage: 340mV Low Noise: 40µVRMS 10Hz to 100kHz


    Original     		PDF LT1963 340mV 100kHz) O-220, OT-223, 16-Lead LT3023 100mA, LT3024 100mA/500mA,

    LT6230-10

    Abstract: LT6202 LT6230 LT6231 LT6232 LT6231C/LT6231I
    Text: LT6230/LT6230-10 LT6231/LT6232 215MHz, Rail-to-Rail Output, 1.1nV/√Hz, 3.5mA Op Amp Family Features Description Low Noise Voltage: 1.1nV/√Hz n Low Supply Current: 3.5mA/Amp Max n Low Offset Voltage: 350µV Max n Gain Bandwidth Product: LT6230: 215MHz; AV ≥ 1


    Original     		PDF LT6230/LT6230-10 LT6231/LT6232 215MHz, LT6230: 215MHz; LT6230-10: 1450MHz; 115dB LT6230 LT6230/LT6230-10 LT6230-10 LT6202 LT6231 LT6232 LT6231C/LT6231I

    RETU 3.02

    Abstract: lp2981 3,3v marking loda
    Text: tß Semiconductor LP2981 M icropow er SOT, 100 m A Ultra Low -D ropout Regulator General Description Features The LP2981 is a 100 mA, 1ixed-output voltage regulator de­ signed specifically to meet the requirements ot battery-powered applications. • ■


    OCR Scan     		PDF LP2981 RETU 3.02 lp2981 3,3v marking loda

    TRANSISTOR 2N338

    Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
    Text: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.


    OCR Scan     		PDF -8-19500/69K MIL-S-19500/89D 2N337 2N338 MEL-8-19500, MEL-S-19500 TRANSISTOR 2N338 2N338 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4