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    SOT-23 1P F Search Results

    SOT-23 1P F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 1P F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz PDF

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


    Original     		MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P PDF

    MMBT2222A

    Abstract: PN2222A PZT2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


    Original     		MMBT2222A PZT2222A OT-23 OT-223 MMBT2222A PN2222A PZT2222A PDF

    transistor 2222a to-92

    Abstract: 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A PN2222A NPN SMALL SIGNAL PSPICE
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


    Original     		PN2222A MMBT2222A PZT2222A PN2222A MMBT2222A OT-23 OT-223 PN2222ARA PN2222ABU transistor 2222a to-92 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A NPN SMALL SIGNAL PSPICE PDF

    TF411

    Abstract: t2222 PN2222A le TF-411
    Text: ggM C O N O U C TO R PN2222A MMBT2222A PZT2222A SOT-23 SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­ cess 19. Absolute Maximum RâtinÇjS


    OCR Scan     		PN2222A MMBT2222A MMPQ2222 NMT2222 PZT2222A PN2222A MMBT2222A OT-23 OT-223 TF411 t2222 PN2222A le TF-411 PDF

    SOT-23 EBC

    Abstract: MMBT2222A PN2222A PZT2222A IC 7403 mark PD sot 23 PN222
    Text: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted


    Original     		MMBT2222A PN2222A PZT2222A OT-23 OT-223 500mA. SOT-23 EBC MMBT2222A PN2222A PZT2222A IC 7403 mark PD sot 23 PN222 PDF

    TF411

    Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
    Text: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and


    OCR Scan     		PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 NMT2222 S0113D bSD113D 004Dbl7 TF411 national PN2222A IC VS 1307 I-00 MMPQ2222 NMT2222 PN2222A PZT2222A TR46 PDF

    PN2222A

    Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
    Text: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PN2222A MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 PN2222A PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16 PDF

    UTC 225

    Abstract: No abstract text available
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225 PDF

    BAV99

    Abstract: BAW56 Fairchild BAW56 SOT-23 bav99 code
    Text: BAW56 BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 SOT-23 1 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


    Original     		BAW56 OT-23 BAV99 BAW56 Fairchild BAW56 SOT-23 bav99 code PDF

    Untitled

    Abstract: No abstract text available
    Text: S iM IC3QMPUCTQ R BAW56 CONNECTION DIAGRAMS SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage


    OCR Scan     		BAW56 OT-23 BAV99 PDF

    fairchild sot-23 bav70

    Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
    Text: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		BAV70 BAV74 OT-23 BAV70 BAV99 fairchild sot-23 bav70 sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV74 sot-23 MARKING CODE A4 PDF

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A PDF

    BD1201

    Abstract: No abstract text available
    Text: BE :?VlICON D U C 'TP R MMBD7000 CONNECTION DIAGRAM SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See M M BD1201-1205 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV


    OCR Scan     		BD7000 MMBD7000 OT-23 BD1201-1205 BD1201 PDF

    BAV99

    Abstract: 1N4150 MMBD1201
    Text: BAV99 CONNECTION DIAGRAM 3 3 3 A7 2 1 SOT-23 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 70 V IO Average Rectified Current


    Original     		BAV99 OT-23 DO-35 OT-23 BAV99 1N4150 MMBD1201 PDF

    MBD7000

    Abstract: BD7000
    Text: S S M iC C N Q L ÌC T G R MMBD7000 CONNECTION SOT-23 DIAGRAM y 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings' Symbol TA = 25 °C unless otherwise noted Parameter Value Units W|v


    OCR Scan     		BD7000 MMBD7000 OT-23 MMBD1201-1205 MBD7000 BD7000 PDF

    kst2222a

    Abstract: No abstract text available
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		KST2222A OT-23 KST2222A PDF

    1N4148 SOT-23

    Abstract: 1N4148 MMBD914 thermal diode 1n4148
    Text: MMBD914 CONNECTION DIAGRAM 3 3 3 5D 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See 1N4148 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75 V W IV Working Inverse Voltage


    Original     		MMBD914 OT-23 1N4148 1N4148 SOT-23 MMBD914 thermal diode 1n4148 PDF

    KST2222A

    Abstract: transistor kst2222a
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		KST2222A OT-23 KST2222A transistor kst2222a PDF