SOT-223 CODE MARKING ABE Search Results

SOT-223 CODE MARKING ABE Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

SOT-223 CODE MARKING ABE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N2222 MPS2222 npn transistor Abstract: transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for	Original	PZT651T1 inch/1000 PZT651T3 inch/4000 P218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N2222 MPS2222 npn transistor transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola	PDF
EQUIVALENT FOR zt751 Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for	Original	PZT751T1 inch/1000 PZT751T3 inch/4000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 EQUIVALENT FOR zt751 zt751 TRANSISTOR zt751 BC237 transistor BF245	PDF
FET 2N5458 Abstract: BC547 fet BC237 TO261AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	MMFT107218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 FET 2N5458 BC547 fet BC237 TO261AA	PDF
DELTA fan bfb Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage	Original	MPSH81 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 DELTA fan bfb BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS	PDF
BC237 Abstract: SOT-223 number code book FREE Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a	Original	OT-223 solder218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 SOT-223 number code book FREE	PDF
TSOP 48 thermal resistance Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72	PDF
BC237 Abstract: MSA1022 msc2295 BF391 "direct replacement" Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for	Original	M218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 MSA1022 msc2295 BF391 "direct replacement"	PDF
BC237 Abstract: 2n2222a SOT223 5161 common anode Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for	Original	OT-223 MV7005T1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2n2222a SOT223 5161 common anode	PDF
MMFT6661T1 Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	Tap218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMFT6661T1 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82	PDF
MSC2404 Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage	Original	MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72	PDF
BF245 Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30	Original	MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
diode l 0607 Abstract: BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.	Original	M1MA141/2KT1 inch/3000 M1MA141/2KT3 inch/10 M1MA141KT1 M1MA142KT1 70/SOT M1MA142KT1 MSC1621T1 diode l 0607 BC237	PDF
BC237 Abstract: 16 pin dip with heat sink Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which	Original	M1MA141/2WAT1 inch/3000 M1MA141/2WAT3 inch/10 M1MA141WAT1 M1MA142WAT1 70/SOT M1MA142WAT218A MSC1621T1 BC237 16 pin dip with heat sink	PDF

BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO – 60	Original	MSB709-RT1 m218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage	Original	MSD1328-RT1 Colle218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237	PDF
marking code J111 Abstract: BC237 2N2904 bc547 marking transistor BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage	Original	MSD602-RT1 IB218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 marking code J111 BC237 2N2904 bc547 marking transistor BCY72	PDF
BC237 Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package	Original	M1MA141/2WKT1 inch/3000 M1MA141/2WKT3 inch/10 M1MA141WKT1 M1MA142WKT1 70/SOT M1218A MSC1621T1 BC237 DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt	PDF
2N5458 Abstract: BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.	Original	M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1 Volta218A MSC1621T1 2N5458 BC237	PDF
marking SC59 Transistor Abstract: BC237 self adhesive label 2N5670 equivalent M1MA151 marking jc 216 sc Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59	Original	M1MA151/2WKT1 inch/3000 M1MA151/2WKT3 inch/10 M1MA151WKT1 M1MA152WKT1 M1218A MSC1621T1 MSC2404 marking SC59 Transistor BC237 self adhesive label 2N5670 equivalent M1MA151 marking jc 216 sc	PDF
P2d MARKING CODE Abstract: H2A transistor ev 2816 BC237 transistor 2N2906 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage	Original	PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906	PDF
BC237 Abstract: BC238B MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value	Original	PZTA42T1 318E-04, O-261AA MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BC238B MOTOROLA	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 rlra Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59	Original	M1MA151/2WAT1 inch/3000 M1MA151/2WAT3 inch/10 M1MA151WAT1 M1MA152WAT1 M1MA152WAT218A MSC1621T1 MSC2404 BC237 MARKING CODE diode sod123 W1 rlra	PDF

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SOT-223 CODE MARKING ABE Search Results

SOT-223 CODE MARKING ABE Result Highlights (5)

SOT-223 CODE MARKING ABE Datasheets Context Search

2N2222 MPS2222 npn transistor

EQUIVALENT FOR zt751

FET 2N5458

DELTA fan bfb

BC237

TSOP 48 thermal resistance

BC237

BC237

MMFT6661T1

MSC2404

BF245

BC237

diode l 0607

BC237

BC237

BC237

BC237

marking code J111

BC237

2N5458

marking SC59 Transistor

P2d MARKING CODE

BC237

BC237