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    SOT-223 BODY MARKING A G Search Results

    SOT-223 BODY MARKING A G Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-223 BODY MARKING A G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMFT5P03HD

    Abstract: NTF5P03T3 SMD310 ntf5p03t3 sot223
    Text: NTF5P03T3 Preferred Device Power MOSFET 3.0 Amps, 60 Volts P–Channel SOT–223 Features • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature SOT–223 Surface Mount Package Avalanche Energy Specified


    Original     		PDF NTF5P03T3 MMFT5P03HD r14525 NTF5P03T3/D NTF5P03T3 SMD310 ntf5p03t3 sot223

    marking 55f

    Abstract: No abstract text available
    Text: ASM1233D, ASM1233D-L, ASM1233M Low Power, 5 V/3.3 V, mP Reset, Active LOW, Open-Drain Output http://onsemi.com Description Applications VCC GND 1 8 2 7 3 4 6 5 NC NC NC NC SO−8 Top View 2 RESET GND VCC 4 3 1 GND SOT−223 (Top View) 1 2 3 Set−top Boxes


    Original     		PDF ASM1233D, ASM1233D-L, ASM1233M ASM1233M ASM1233D-L/1233D/1233M ASM1233D/D marking 55f

    9N05A

    Abstract: NIF9N05ACLT1G MARKING 117-a SOT-223 NIF9N05ACLT3G A1 SOT-223 MOSFET
    Text: NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped


    Original     		PDF NIF9N05CL, NIF9N05ACL OT-223 NIF9N05CL/D 9N05A NIF9N05ACLT1G MARKING 117-a SOT-223 NIF9N05ACLT3G A1 SOT-223 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: NIF9N05CL, NIF9N05ACL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped


    Original     		PDF NIF9N05CL, NIF9N05ACL NIF9N05CL/D

    F9N05

    Abstract: MARKING 117-a SOT-223 NIF9N05CL NIF9N05CLT1 NIF9N05CLT1G NIF9N05CLT3 NIF9N05CLT3G A1 SOT-223 MOSFET
    Text: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP


    Original     		PDF NIF9N05CL OT-223 NIF9N05CL/D F9N05 MARKING 117-a SOT-223 NIF9N05CL NIF9N05CLT1 NIF9N05CLT1G NIF9N05CLT3 NIF9N05CLT3G A1 SOT-223 MOSFET

    4030p

    Abstract: NJV4030PT1G
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G OT-223 AEC-Q101 NJT4030P/D 4030p NJV4030PT1G

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1G, NSVBSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for


    Original     		PDF BSP19AT1G, NSVBSP19AT1G OT-223 BSP16T1G BSP19AT1/D

    Untitled

    Abstract: No abstract text available
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4031N, NJV4031NT1G, NJV4031NT3G NJT4031N/D

    4031N

    Abstract: NJV4031NT1G NJV4031NT3G
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc


    Original     		PDF NJT4031N, NJV4031NT1G, NJV4031NT3G OT-223 AEC-Q101 NJT4031N/D 4031N NJV4031NT1G

    4030p

    Abstract: No abstract text available
    Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4030P, NJV4030PT1G, NJV4030PT3G NJT4030P/D 4030p

    mosfet L 3055 motorola

    Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
    Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET


    Original     		PDF MMFT3055E/D MMFT3055E MMFT3055E/D* mosfet L 3055 motorola L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3

    sot-223 code marking

    Abstract: No abstract text available
    Text: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT-223 BSP16T1 r14525 BSP19AT1/D sot-223 code marking

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP


    Original     		PDF MMFT2955E/D MMFT2955E MMFT2955E/D*

    2N02l

    Abstract: 2N02 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 MMFT2N02ELT3 SMD310
    Text: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2N02EL Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET


    Original     		PDF MMFT2N02EL/D MMFT2N02EL MMFT2N02EL/D* 2N02l 2N02 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 MMFT2N02ELT3 SMD310

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT-223 BSP16T1

    NT 2955 ON transistor

    Abstract: Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK
    Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP


    Original     		PDF MMFT2955E/D MMFT2955E NT 2955 ON transistor Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK

    transistor Amp 3055L

    Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
    Text: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET


    Original     		PDF MMFT3055EL/D MMFT3055EL MMFT3055EL/D* transistor Amp 3055L 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569

    MMFT1N10ET1

    Abstract: 1N10
    Text: MMFT1N10E Medium Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS E−FETt SOT−223 for Surface Mount http://onsemi.com This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation


    Original     		PDF MMFT1N10E OT-223 MMFT1N10E/D MMFT1N10ET1 1N10

    motorola transistor dpak marking

    Abstract: 1N10 2N3904 AN569 MMFT1N10E MMFT1N10ET1 MMFT1N10ET3 SMD310
    Text: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT1N10E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET


    Original     		PDF MMFT1N10E/D MMFT1N10E MMFT1N10E/D* motorola transistor dpak marking 1N10 2N3904 AN569 MMFT1N10E MMFT1N10ET1 MMFT1N10ET3 SMD310

    4030p

    Abstract: No abstract text available
    Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc POWER BJT IC = 3.0 AMPERES BVCEO = 40 VOLTS • High DC Current Gain −


    Original     		PDF NJT4030P OT-223 4030P 4030PG NJT4030P/D

    SP19A

    Abstract: No abstract text available
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D SP19A

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D

    Untitled

    Abstract: No abstract text available
    Text: NIF9N05CL Protected Power MOSFET 2.6 Amps, 52 Volts N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped


    Original     		PDF NIF9N05CL OT-223 NIF9N05CL/D