Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT TRANSISTOR 702 Search Results

    SOT TRANSISTOR 702 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SOT TRANSISTOR 702 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002TGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE


    Original     		PDF 2N7002TGP SC-75/SOT-416 SC-75/SOT-416) 2N7002TGP

    transistor 702E

    Abstract: 2N7002EPT 702e TRANSISTOR 702e sd mosfet 702e mosfet 702E
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002EPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE


    Original     		PDF 2N7002EPT SC-70/SOT-323 SC-70/SOT-323) 2N7002EPT transistor 702E 702e TRANSISTOR 702e sd mosfet 702e mosfet 702E

    transistor s72

    Abstract: transistor marking s72 2N7002
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data


    Original     		PDF 2N7002 OT-23 OT-23, MIL-STD-202, 500mA DS11303 transistor s72 transistor marking s72 2N7002

    702 TRANSISTOR smd

    Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
    Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance


    Original     		PDF 2N7002K OT-23 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702

    mpsh81 model

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model

    Untitled

    Abstract: No abstract text available
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23

    nk90

    Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 nk90 mje321 BF-133 CBVK741B019 F63TNR MMBTH81 PN2222N pnp rf transistor Bf133

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    mpsh81 model

    Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model MMBTH81 CBVK741B019 F63TNR PN2222N NE-21 BF-133

    transistor packages sot93

    Abstract: No abstract text available
    Text: HANDLING OF POWER PLASTIC TRANSISTORS PRECAUTIONS FOR PHYSICAL HANDLING OF POWER PLASTIC TRANSISTOR [TO-220, ISOWATT220, TO-218 SOT-93 , ISOWATT218, TO-126 (SOT-32), SOT-82, SOT-194] When mounting power transistors certain precau­ tions must be taken in operations such as bending


    OCR Scan     		PDF O-220, ISOWATT220, O-218 OT-93) ISOWATT218, O-126 OT-32) OT-82, OT-194] transistor packages sot93

    bd132

    Abstract: transistor ALG 20
    Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF BD132 OT-32 BD131. bbS3T31 0D34251 BD131 BD132 bb53T31 transistor ALG 20

    RXT-A28

    Abstract: marking 44t Transistors marking 69 rxta28 44t transistor SSTA28 XI100 transistor 44t high voltage npn transistor SOT-89 darlington Z 728
    Text: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. SST3 Features • Dimensions Units : mm l.9 ± 0 .2 available in the following packages: 03 0.95 0.95 — SST3 (SST, SOT-23) t+qii) | (z)|+] I — MPT3 (MPT, SOT-89),


    OCR Scan     		PDF OT-23) OT-89) SSTA28 RXT-A28 mc172 marking 44t Transistors marking 69 rxta28 44t transistor XI100 transistor 44t high voltage npn transistor SOT-89 darlington Z 728

    transistor h44

    Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
    Text: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)


    OCR Scan     		PDF BD132 OT-32 BD131. O-126 OT-32) 00342SM transistor h44 BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32

    transistor marking s72

    Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
    Text: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002 OT-23, MIL-STD-202, OT-23 DS11303 2N7002 transistor marking s72 transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702

    transistor R2U

    Abstract: SSTA63 marking B25 transistor b25
    Text: PNP Darlington transistor Die no. B-25 These are epitaxial planar PNP silicon Darlington transistors. Features • Dimensions Units : mm SST3 available in a SST3 (SST, SOT-23) package, see page 300 • collector-to-emitter breakdown voltage, BVCES = 30 V (min)


    OCR Scan     		PDF OT-23) SSTA63 100MHz 200MHz 300MHz transistor R2U marking B25 transistor b25

    Untitled

    Abstract: No abstract text available
    Text: Die no. B-11 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Dimensions Units : mm SST3 Features l.9±0.2 0.95 0.95 available in an SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 40 V (min)


    OCR Scan     		PDF OT-23) BCX17

    BJ 027

    Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
    Text: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA


    OCR Scan     		PDF 2SB1427 OT-89, SC-62) 2SB1427; -1A/-50 2SB1427 00m74i4 BJ 027 T100 transistor PNP marking BJ pnp SOT89

    Transistor MARKING CODE AW SOT89

    Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
    Text: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,


    OCR Scan     		PDF 2SD2153 OT-89, SC-62) 2SD2153; 00mfl70 G014fl71 Transistor MARKING CODE AW SOT89 Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62

    150X1

    Abstract: No abstract text available
    Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7002 OT-23 VNDS06 150X1, 150X1

    Untitled

    Abstract: No abstract text available
    Text: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)


    OCR Scan     		PDF OT-89) BCX53 I70CP-C0LLECT0R

    K72 so

    Abstract: transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: 2.5£2 Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 - H : h“ A TOP VIEW l2l , lîl Mechanical Data Case: SO T-23, Molded Plastic


    OCR Scan     		PDF 2N7002-01 OT-23 IL-STD-202, -250pA 300ns, DS30026 K72 so transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor

    Untitled

    Abstract: No abstract text available
    Text: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCEO = 40 V (min) at lc = 1.0 mA 0 .4 5 ± 0 .1 excellent gain linearity from 100 (iA to


    OCR Scan     		PDF OT-23) SST6839 BC857B BC858B

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd
    Text: Central S e m ic o n d u c to r C o rp . NEW PRODUCT ANNOUNCEMENT 2N7002 SMD Power MOSFET % SOT-23 Case DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process. This device can be utilized in the computer, telecommunications


    OCR Scan     		PDF 2N7002 OT-23 2N7002 CSEMS002 2N7002PA TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 702 y smd TRANSISTOR 702 N smd transistor SMD transistor marking 702 702 transistor smd code 702 L TRANSISTOR smd 70.2 TRANSISTOR smd

    2SC3339

    Abstract: 2SC3340 2SC2714 2SC2715 2SC2716 2SC2996
    Text: Powered by —3 O 00 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. ICminer.com CD > r*-i H C/3 n Electronic-Library > TRANSISTOR < hFE Type No. Application PNP NPN VCEO 'c PC VCE !C (V) (mAl (mW) (V) ImA) >B n -i IMF MAX. (TYP.) f y TYP. (MIN.) VCE(sat) MAX.


    OCR Scan     		PDF DD0T147 2SC2714 2SC2715 2SC2716 2SC2996 2SC3339 2SC3340 2SC2715 2SC2996