2SC5343
Abstract: SUT486J kst60
Text: SUT486J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT486J Package Code 6X SOT-363 Outline Dimensions unit : mm
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SUT486J
2SC5343
OT-363
OT-363
KST-6004-004
SUT486J
kst60
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2SC5343
Abstract: SUT485J kst60 SUT485
Text: SUT485J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT485J Package Code SS SOT-363 Outline Dimensions unit : mm
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SUT485J
2SC5343
OT-363
OT-363
KST-6003-004
SUT485J
kst60
SUT485
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2SC5343
Abstract: SUT495J kst60
Text: SUT495J Semiconductor Epitaxial Planar type NPN Silicon Transistor Description • General purpose transistor Feature • Two 2SC5343 chips in SOT-363 package Ordering Information Type NO. Marking SUT495J Package Code FX SOT-363 Outline Dimensions unit : mm
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SUT495J
2SC5343
OT-363
OT-363
KST-6037-000
SUT495J
kst60
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kst60
Abstract: 2SA1980 SUT488J KST-6006-002
Text: SUT488J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • General purpose transistor Feature • Two 2SA1980 chips in SOT-363 package Ordering Information Type NO. Marking SUT488J Package Code 8X SOT-363 Outline Dimensions unit : mm
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SUT488J
2SA1980
OT-363
OT-363
KST-6006-002
kst60
SUT488J
KST-6006-002
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kst60
Abstract: 2SA1980 SUT487J
Text: SUT487J Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • General purpose transistor Feature • Two 2SA1980 chips in SOT-363 package Ordering Information Type NO. Marking SUT487J Package Code XX SOT-363 Outline Dimensions unit : mm
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SUT487J
2SA1980
OT-363
OT-363
KST-6005-002
kst60
SUT487J
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SUT484J
Abstract: 2SA1980 2SC5343 KST-6002-004 kst60 cob ic
Text: SUT484J Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General purpose transistor Feature • Both 2SA1980 chip and 2SC5343 chip in SOT-363 package Ordering Information Type NO. Marking SUT484J Package Code 4X SOT-363 Outline Dimensions
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SUT484J
2SA1980
2SC5343
OT-363
OT-363
KST-6002-004
SUT484J
KST-6002-004
kst60
cob ic
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kst60
Abstract: 2SA1980 2SC5343 SUT483J
Text: SUT483J Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General purpose transistor Feature • Both 2SA1980 chip and 2SC5343 chip in SOT-363 package Ordering Information Type NO. Marking SUT483J Package Code 3X SOT-363 Outline Dimensions
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SUT483J
2SA1980
2SC5343
OT-363
OT-363
KST-6001-004
kst60
SUT483J
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Untitled
Abstract: No abstract text available
Text: SUR519J Semiconductor Epitaxial Planar Type NPN Silicon Transistor Description • Digital transistor Features • Two SRC1207 chips in SOT-363 package • With built-in bias resistors Ordering Information Type NO. SUR519J Marking S Package Code SOT-363 Outline Dimensions
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SUR519J
SRC1207
OT-363
OT-363
KST-6012-002
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marking s6 sot363
Abstract: No abstract text available
Text: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical
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OT-363
026BSC
65BSC
UL94V-0
marking s6 sot363
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sot363 marking 02
Abstract: marking code BK sot363 sot363 marking DATE code marking 34 EIA-481-1A ALPHA MARKING DATE CODE
Text: Package Details - SOT-363 Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (10-December 2002)
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OT-363
10-December
EIA-481-1-A
20x20x10
20x20x20
sot363 marking 02
marking code BK sot363
sot363 marking DATE code
marking 34
EIA-481-1A
ALPHA MARKING DATE CODE
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338 marking code
Abstract: marking 131 SOT363 alpha OM-338
Text: Package Details SOT-363 Case Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric Code Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details
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OT-363
EIA-481-1-A
338 marking code
marking 131 SOT363
alpha OM-338
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knowledge sot-363 tm
Abstract: 46 sot363 marking code BK sot363
Text: Package Details - SOT-363 Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric Code. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R2 (5-November 2007)
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OT-363
EIA-481-1-A
knowledge sot-363 tm
46 sot363
marking code BK sot363
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SUB610
Abstract: No abstract text available
Text: SUB610 Semiconductor Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. Marking SUB610 61B Package Code SOT-363 Outline Dimensions
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SUB610
OT-363
KSD-D5S004-000
SUB610
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Si1906DL
Abstract: No abstract text available
Text: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code
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Si1906DL
OT-363
SC-70
18-Jul-08
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marking code PB
Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
S-51614--Rev.
05-Sep-05
marking code PB
SI1900DL-T1-E3
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Si1900DL
Abstract: Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
08-Apr-05
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Si1901DL
Abstract: vishay siliconix code marking
Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability
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Si1901DL
OT-363
SC-70
18-Jul-08
vishay siliconix code marking
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Si1900DL
Abstract: Si1900DL-T1
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
18-Jul-08
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Si1405DL
Abstract: SOT363
Text: Si1405DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.125 @ VGS = –4.5 V "1.8 0.160 @ VGS = –2.5 V "1.6 0.210 @ VGS = –1.8 V "1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D D 5 2 OB D XX YY Marking Code
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Si1405DL
OT-363
SC-70
18-Jul-08
SOT363
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Untitled
Abstract: No abstract text available
Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code
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Si1900DL
OT-363
SC-70
Si1900DL-T1
Si1900DL-T1--E3
S-51075--Rev.
13-Jun-05
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SOT363 MARKING CODE 7M
Abstract: SOT363 MARKING CODE 7N SOT 363 marking 67 marking 52 sot-363 MARKING CODE 7C sot363 MUN5237DW1T1
Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5211DW1T1
OT-363
MUN5211DW1T1/D
SOT363 MARKING CODE 7M
SOT363 MARKING CODE 7N
SOT 363 marking 67
marking 52 sot-363
MARKING CODE 7C sot363
MUN5237DW1T1
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sot363 marking code 385
Abstract: SOT 363 marking 67 MUN5211DW1T1 MUN5211DW1T1G MUN5212DW1T1 MUN5212DW1T1G MUN5213DW1T1 MUN5213DW1T1G MUN5214DW1T1 MUN5214DW1T1G
Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5211DW1T1
OT-363
MUN5211DW1T1/D
sot363 marking code 385
SOT 363 marking 67
MUN5211DW1T1G
MUN5212DW1T1
MUN5212DW1T1G
MUN5213DW1T1
MUN5213DW1T1G
MUN5214DW1T1
MUN5214DW1T1G
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Untitled
Abstract: No abstract text available
Text: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code
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OT-363
SC-70
S-01886--
28-Aug-00
1901DL
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SOT 363 marking code 62 low noise
Abstract: bf362 bc238c
Text: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages
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Q00S201
569-GS
SOT 363 marking code 62 low noise
bf362
bc238c
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