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    SOT 363 MARKING CODE 01 Search Results

    SOT 363 MARKING CODE 01 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 363 MARKING CODE 01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1901DL

    Abstract: D234
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


    Original     		PDF Si1901DL OT-363 SC-70 S-01886--Rev. 28-Aug-00 D234

    Si1901DL

    Abstract: vishay siliconix code marking
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


    Original     		PDF Si1901DL OT-363 SC-70 18-Jul-08 vishay siliconix code marking

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability


    Original     		PDF Si1902DL OT-363 SC-70 S-99185--Rev. 01-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability


    Original     		PDF Si1901DL OT-363 SC-70 08-Apr-05

    SOT363 MARKING CODE 7M

    Abstract: SOT363 MARKING CODE 7N SOT 363 marking 67 marking 52 sot-363 MARKING CODE 7C sot363 MUN5237DW1T1
    Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1 OT-363 MUN5211DW1T1/D SOT363 MARKING CODE 7M SOT363 MARKING CODE 7N SOT 363 marking 67 marking 52 sot-363 MARKING CODE 7C sot363 MUN5237DW1T1

    sot363 marking code 385

    Abstract: SOT 363 marking 67 MUN5211DW1T1 MUN5211DW1T1G MUN5212DW1T1 MUN5212DW1T1G MUN5213DW1T1 MUN5213DW1T1G MUN5214DW1T1 MUN5214DW1T1G
    Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1 OT-363 MUN5211DW1T1/D sot363 marking code 385 SOT 363 marking 67 MUN5211DW1T1G MUN5212DW1T1 MUN5212DW1T1G MUN5213DW1T1 MUN5213DW1T1G MUN5214DW1T1 MUN5214DW1T1G

    SOT 363 marking 67

    Abstract: MUN5111DW1T1 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001
    Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor


    Original     		PDF MUN5111DW1T1 OT-363 MUN5111DW1T1/D SOT 363 marking 67 MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 MUN5114DW1T1G marking CODE 001

    SOT 363 marking CODE m4

    Abstract: marking code 12 SOT-363 amplifier MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1
    Text: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


    Original     		PDF MBD110DWT1, MBD330DWT1, MBD770DWT1 OT-363 OT-363 OT-23 MBD110DWT1/D SOT 363 marking CODE m4 marking code 12 SOT-363 amplifier MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1

    MBD110DW

    Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363
    Text: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


    Original     		PDF MBD110DWT1, MBD330DWT1, MBD770DWT1 OT-363 OT-363 OT-23 MBD110DWT1/D MBD110DW MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G MBD110DWT1/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		PDF LMUN5111DW1T1G

    SOT363 MARKING 3B

    Abstract: bc857 sot363 SOT-363 footprint BC858CDW1T1 marking code 12 SOT-363 amplifier BC856 BC856BDW1T1 BC857 marking 3b sot363 BC857BDW1T1
    Text: BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


    Original     		PDF BC856BDW1T1, BC857BDW1T1 BC858CDW1T1 OT-363/SC-88 BC856 BC857 BC858 SOT363 MARKING 3B bc857 sot363 SOT-363 footprint marking code 12 SOT-363 amplifier BC856 BC856BDW1T1 BC857 marking 3b sot363

    MBD110DW

    Abstract: MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G OT-363 OT-363 OT-23 MBD110DWT1/D MBD110DW MBD110DWT1G MBD330DW MBD330DWT1G MBD770DW MBD770DWT1G MMBD101LT1 MMBD301LT1 MMBD701LT1 SOT 363 marking code 06 low noise

    H5 MARKING

    Abstract: marking 12 SOT-363 amplifier
    Text: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G, MBD770DWT1G OT-363 OT-23 SC-88 H5 MARKING marking 12 SOT-363 amplifier

    MUN5233DW1T1G

    Abstract: MUN5214DW1T1G mun5215dw1t1g MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G SOT363 MARKING CODE 7N
    Text: MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1G MUN5211DW1T1G OT-363 MUN5211DW1T1/D MUN5233DW1T1G MUN5214DW1T1G mun5215dw1t1g MUN5212DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G SOT363 MARKING CODE 7N

    marking 12 SOT-363 amplifier

    Abstract: marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G OT-363 OT-23 SC-88 marking 12 SOT-363 amplifier marking code 04 sot-363 SOT 363 marking code 06 low noise SOT 363 marking CODE T4

    Untitled

    Abstract: No abstract text available
    Text: MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces


    Original     		PDF MBD110DWT1G, MBD330DWT1G MBD110DWT1/D

    Untitled

    Abstract: No abstract text available
    Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1Gâ MUN5211DW1T1G MUN5211DW1T1/D

    SMUN5211DW1T1G

    Abstract: SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5211DW1T1G MUN5233DW1T1G
    Text: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1GSeries MUN5211DW1T1G OT-363 MUN5211DW1T1/D SMUN5211DW1T1G SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5233DW1T1G

    SOT363 MARKING 3B

    Abstract: No abstract text available
    Text: BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors http://onsemi.com PNP Duals SOT−363/SC−88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


    Original     		PDF BC856BDW1T1G, SBC856BDW1T1GSeries, BC857BDW1T1G, SBC857BDW1T1GSeries, BC858CDW1T1G OT-363/SC-88 AEC-Q101 BC856, SBC856 SOT363 MARKING 3B

    BC858CDW1T1

    Abstract: marking code 04 sot-363
    Text: BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


    Original     		PDF BC856BDW1T1, BC857BDW1T1 BC858CDW1T1 OT-363/SC-88 BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858CDW1T1 BC856 BC857 marking code 04 sot-363

    MARKING PARI SC70-6

    Abstract: sot363 marking qs sm905
    Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View


    OCR Scan     		PDF 1902DL OT-363 SC-70 S-99188-- 01-Nov-99 MARKING PARI SC70-6 sot363 marking qs sm905

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363


    OCR Scan     		PDF BCR183S 10kii, Q62702-C2377 OT-363

    Untitled

    Abstract: No abstract text available
    Text: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code


    OCR Scan     		PDF OT-363 SC-70 S-01886-- 28-Aug-00 1901DL