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    SOT 236 CB Search Results

    SOT 236 CB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 236 CB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LL-34 zener diode

    Abstract: LL-41 diode marking
    Text: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 1 2  1 1 2 2 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123 / SOD-323 SOD-523 / LL34 SOT-23  SOD-123 JEDEC TO-236 * Low reverse leakage current  2 SOT-23


    Original     		PDF UMMSZ52XXB OD-323 OD-523 LL-34 OD-123 OD-523 OT-23 OD-123 O-236) LL-34 zener diode LL-41 diode marking

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 2 2 „ JEDEC TO-236 1 1 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123/SOD-323 SOD-523/LL34 SOT-23-3 „ 2 2 * Low reverse leakage current „ 1 SOD-123 SOT-23-3 DESCRIPTION


    Original     		PDF UMMSZ52XXB OD-123 OT-23-3 O-236) UMMSZ52XXB OD-323 OD-523 LL-34 OD-123/SOD-323

    3.9V ZENER DIODE

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXB Preliminary ZENER DIODE SURFACE MOUNT SILICON ZENER DIODE 3 2 2  JEDEC TO-236 1 1 SOD-323 SOD-523 FEATURES 2 1 LL-34 SYMBOL SOD-123/SOD-323 SOD-523/LL34 SOT-23-3  2 2 * Low reverse leakage current  1 SOD-123


    Original     		PDF UMMSZ52XXB O-236) OD-323 OD-523 LL-34 OD-123/SOD-323 OD-523/LL34 OT-23-3 OD-123 3.9V ZENER DIODE

    KT503A

    Abstract: 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


    Original     		PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 KT503A 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868

    2SC1861

    Abstract: mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 go. 95 PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 Manufacturer V(BR)CEO hFE Ic Max (A) fT (Hz) PhilipsElec Siemens Akt See Index


    Original     		PDF PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 2SC1861 mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A

    2N4250 motorola

    Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a


    Original     		PDF BC160 2N3581 MMBA956H5 2N5819 GES5819 TP5819 D29E6 TIS93 2N4250 motorola bc154 KT501S LOW-POWER SILICON PNP BC313-16

    50N240

    Abstract: JE9093C LOW-POWER SILICON PNP HSE194
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30


    Original     		PDF MPS-A93 BF693 MPSA930 2N6432 PH5415 PN5415 2SB718 BSS74S 50N240 JE9093C LOW-POWER SILICON PNP HSE194

    2SA1020Y

    Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
    Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH


    Original     		PDF TEC9015B 2SA661 2SB1002 2SB1059 2SB740 BFT71 BFT81 2SA493G 2SA1020Y 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 TEC9015 2SA705 2SA1015L

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401LT1 Preferred Device Switching Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage


    Original     		PDF MMBT4401LT1 MMBT4401LT1/D

    TO-236

    Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3
    Text: MMBT4403LT1 Switching Transistor PNP Silicon Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage


    Original     		PDF MMBT4403LT1 MMBT4403LT1/D TO-236 MMBT4403LT1 MMBT4403LT1G MMBT4403LT3

    PN2222A MOTOROLA

    Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


    Original     		PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 PN2222A MOTOROLA valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A

    2N3609

    Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate


    Original     		PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625

    BC558AP

    Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A


    Original     		PDF A5T4058 A8T4058 RN4058 2N3058 2SA509 PET4058 2SA1052 2N4058 BC231A BC558AP TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802

    MMBT5401LT1

    Abstract: MMBT5401LT1G MMBT5401LT3 MMBT5401LT3G 2L SOT23
    Text: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage


    Original     		PDF MMBT5401LT1 MMBT5401LT1 MMBT5401LT1G MMBT5401LT3 MMBT5401LT3G 2L SOT23

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies National Semiconductor Surface Mount Transistors NPN General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT100 (N1) MMBT100A (N1A) Case Style TO-236 (49) TO-236 (49) (V) Min (V) Min (V) Min 75 45 6 75 45


    OCR Scan     		PDF OT-23 MMBT100 MMBT100A O-236 MMBTA05 MMBT5551 MMBT2222

    MMBT4124

    Abstract: MMBT6515 MMPQ3904 MMPQ6700 PZT3904
    Text: This I tr in Material a fcH fc-> LU □ NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark Case Style a Copyrighted □ -C V CBO ^CEO v EBO (V) Min (V) Min (V) Min 25 5 MMBT4124 (ZC) TO-236 (49) 30 a _□ 03 MMBT6515 (3J) TO-236


    OCR Scan     		PDF OT-23 MMBT4124 O-236 MMBT6515 MMPQ3904 SO-16 MMBT4124 MMBT6515 MMPQ6700 PZT3904

    MMBT3904

    Abstract: MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT
    Text: This Surface Mount Transistors cr Material In a t-< fcH Copyrighted UJ a a a NPN Surface Mount General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT4401 (2X) Case Style TO-236 (49) ^CBO ^CEO VffiO (V) (V) (V) Min Min Min 60 40 6 'cBO u Max


    OCR Scan     		PDF OT-23 MMBT4401 O-236 MMPQ2222 SO-16 MMPQ6502" NMT2222 7MMPQ6502" MMBT3904 MMBT4401 MMPQ2222 MMPQ6502 NMT2222 PZT2222A MMBT3904 1A MARK SO SOT

    MMBTH10

    Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
    Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter


    OCR Scan     		PDF MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national

    Mark T92

    Abstract: No abstract text available
    Text: This Pro Electron Series Material cr Ln CD b-1 b-1 ÜJ Pro Electron Surface Mount Bipolar Devices continued V *CES Device No. (SOT-23 Mark) a Copyrighted o □ -C a BSR14 (U8) Ln ID Case Style TO-236 (49) V 1 * ' ces ^C E O CBO (V) * *CBO (V) Min Min (nA)


    OCR Scan     		PDF OT-23 Mark T92

    Untitled

    Abstract: No abstract text available
    Text: MPSH20/MMBTH20 W A National Jim Semiconductor MPSH20 MMBTH20 Ih r ¡J TO- 236 SOT-23 TO-92 TL/G/10100-5 TL/G/10100-3 NPN RF Transistor Electrical Characteristics ta =25°c unless otherwise noted Parameter Symbol Min Typ Max Units O FF CH ARACTERISTICS V (BR)CEO


    OCR Scan     		PDF MPSH20/MMBTH20 MPSH20 MMBTH20 OT-23) TL/G/10100-5 TL/G/10100-3 100/nAdc,

    Untitled

    Abstract: No abstract text available
    Text: MPSA56/MPSW56/MMBTA56 £ 5 | National m im Semiconductor MPSA56 / if M MMBTA56 MPSW56 C iJ ir È 10-92 N ^ c 7^7 ! TO-236 (SOT- 23 TO- 226AE Tl/G/10100-5 B. c TL/G/10100-1 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol = 25°c unless otherwise noted


    OCR Scan     		PDF MPSA56/MPSW56/MMBTA56 MPSA56 MPSW56 MMBTA56 TL/G/10100-1 O-236 226AE Tl/G/10100-5 TL/G/10100-4

    PN4258

    Abstract: process 65
    Text: PN4258/MMBT4258 National Semiconductor Ju â PN4258 MMBT4258 K rO JJ B ¡I e < /n / TO - 236 TO- 9 2 SOT - 23 E. f T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP Switching Transistor Electrical Characteristics ta = 2 5 °c unless otherw ise noted Sym bol


    OCR Scan     		PDF PN4258/MMBT4258 PN4258 MMBT4258 PN4258 process 65

    IMBT4401

    Abstract: No abstract text available
    Text: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A


    OCR Scan     		PDF O-236 OT-23) IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222 IMBT2222A

    2n2369

    Abstract: PN2369 2N2369 SOT-23
    Text: 2N2369/PN2369/MMBT2369/MPQ2369 V glNational JuM Semiconductor 2N2369 PN2369 MMBT2369 U^ ffi/ T°-92 // T°-’8 U , TO- 236 SOT- 23 T L / G / ,0 00-7 Eg U T L /G /1 0 1 0 0 -9 MPQ2369 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 NPN Switching Transistor Electrical Characteristics t a


    OCR Scan     		PDF 2N2369/PN2369/MMBT2369/MPQ2369 2N2369 PN2369 MMBT2369 MPQ2369 10/iA 20Vdc, 2N2369 SOT-23