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    SOP32 525mil

    Abstract: SOP32 525-mil
    Text: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the


    Original     		PDF 32Pin 525mil) ED-7303A) SOP32 525mil SOP32 525-mil

    i232

    Abstract: 525mil
    Text: 32P2M-A Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 JEDEC Code – Weight g 1.29 Lead Material Alloy 42 e 17 E Recommended Mount Pad Symbol 1 16 F A A2 D e y L b A1 L1 HE e1 I2 32 b2 A A1 A2 b c D E e HE L L1 y c Detail F b2 e1 I2 Dimension in Millimeters


    Original     		PDF 32P2M-A 32pin 525mil OP32-P-525-1 i232

    SOP32 525mil

    Abstract: No abstract text available
    Text: 32P2M-B Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 Weight g 1.29 JEDEC Code – Lead Material Alloy 42 e I2 A 17 e1 32 b2 1 F Symbol L1 HE E Recommended Mount Pad A A1 A2 b c D E e HE L L1 y 16 y b L e A1 A2 D c Detail F b2 e1 I2 Dimension in Millimeters


    Original     		PDF 32P2M-B 32pin 525mil OP32-P-525-1 SOP32 525mil

    SOP32 525mil

    Abstract: FA-1 SOP32
    Text: E HE 1 32 b EIAJ Package Code SOP32-P-525-1.27 D e JEDEC Code – y 16 17 Weight g 1.29 A Lead Material Alloy 42 L1 32P2M-A A2 c Detail F F A1 e1 L b2 b2 e1 I2 A A1 A2 b c D E e HE L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 3.05


    Original     		PDF OP32-P-525-1 32P2M-A 32pin 525mil SOP32 525mil FA-1 SOP32

    SOP32 525mil

    Abstract: SOP32
    Text: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定（ED-7303A）に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。


    Original     		PDF 32Pin 525mil) ED-7303A SOP32 525mil SOP32

    BS62LV1024TI

    Abstract: BS62X FS6S0765RCHSYDT BS62XV1024 TSOP-32 BS62LV1024SC
    Text: BSI Extremely Low Power/Voltage CMOS SRAM 128K X 8 bit BS62XV1024 ! FEATURES ! DESCRIPTION • Extremely low operation voltage : 1.2V ~ 2.4V • Extremely low power consumption : Vcc = 1.5V 10mA Max. write current 0.5mA (Max.) read current 0.005uA (Typ.) CMOS standby current


    Original     		PDF BS62XV1024 005uA 250ns BS62XV1024 R0201-BS62LV1024 BS62LV1024 -40oC BS62LV1024TI BS62X FS6S0765RCHSYDT TSOP-32 BS62LV1024SC

    HY628100BLLG-55

    Abstract: HY628100B-LLG55 55NS BS62LV1029 BS62LV1029SC BS62LV1029SC-55 BS62LV1029STC BS62LV1029TC HY628100B E12855
    Text: APPROVED MANUFACTURERS LIST FOR WEB PARTS 650-0025 ITEM NUMBER -WEB PART DESCRIPTION IC SRAM 128K X 8 5V 55NS SOIC SMT REVISION HISTORY Rev D ECO # E12099 RELEASE TO WEB STORE. PREVIOUSLY ID'D AS 100-0007. Description of Change Proj Eng E E12855 APPROVE BRILLIANCE SEMICONDUCTOR. REMOVE OLD SOURCES.


    Original     		PDF E12099 E12855 32pin 525mil 8x20mm HY628100BLLG-55 HY628100B-LLG55 55NS BS62LV1029 BS62LV1029SC BS62LV1029SC-55 BS62LV1029STC BS62LV1029TC HY628100B E12855

    TC534000AP

    Abstract: a13c
    Text: TC534000AP/AF 4M BIT 512K W ORD x 8 BIT CMOS MASK ROM PRELIMINARY DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 624,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the


    OCR Scan     		PDF TC534000AP/AF TC534000AP/AF 288words TC534000AP 150ns, 600mil 32pin 525mil a13c

    A18D0

    Abstract: TC534000AP
    Text: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the


    OCR Scan     		PDF TC534000AP/AF 288words TC534000AP 150ns, TC534000AP/ 600mil 32pin 525mil A18D0

    TC53400

    Abstract: TC534000P
    Text: 4M BIT 512K WORD X 8 BIT CMOS MASK ROM DESCRIPTION The TC534000P/F is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 200ns /250ns, an operation current of 30mA at 5MHz


    OCR Scan     		PDF TC534000P/F 288words 200ns /250ns, 600mil 32pin 525mil TC53400 TC534000P

    Untitled

    Abstract: No abstract text available
    Text: 4M BIT 512K W O RD x 8 BIT CMOS MASK ROM DESCRIPTION The TC534000P/F is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 200ns/250ns, an operation current of 30mA at 5MHz


    OCR Scan     		PDF TC534000P/F 288words 200ns/250ns, 20ixA. 600mil 32pin 525mil

    TCS3200

    Abstract: TC532000
    Text: 2 M B IT 2 5 6 K W O R D X 8 B IT C M O S M A S K R O M D E S C R IP T IO N The TC 532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The TC532000AP / A F is fabricated using Toshiba’s advanced CMOS technology which provides the


    OCR Scan     		PDF 32000A TC532000AP 150ns, TCS32000AP TC532000A 600mil 32pin 525mil 150ns TCS3200 TC532000

    SOP32 525mil

    Abstract: DIP32 AF-15
    Text: m ÈÊÈÊm 2M BIT 2 5 6 K W O R D X 8 B IT CM O S M A S K ROM DESCRIPTION The TC532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The T C 532000A P/A F is fabricated using Toshiba’s advanced CMOS technology which provides the


    OCR Scan     		PDF TC532000AP/AF 150ns, 20/aA. 600mil 32pin 525mil SOP32 525mil DIP32 AF-15

    E 102H transistor

    Abstract: 2SC 3205 TRANSISTOR 2Sc 3205 ML100 SOP32 525mil CE-70
    Text: I Ordering number : EN3K4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC33864 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized


    OCR Scan     		PDF ENiX-4701 LC33864P, ML-70/80/10 LC33864 32-pin 450mil) li-11- OP28D E 102H transistor 2SC 3205 TRANSISTOR 2Sc 3205 ML100 SOP32 525mil CE-70

    HX8t

    Abstract: LE28C1001AM LE28C1001 irf 3205 a 405-v1
    Text: KNo N*5720 / V 0 .^ 5 7 2 0 52797 CMOS LSI L E 2 8 C 1 1 A M , A T - 9 / 1 2 i m 3 1 7 2 2 - ^ 8 x 4KB ^ / / / /„ «It*' ^ / / « l ¿ E i k . M . .^¡1 / _ LE28C1001AM, A T Ii, 131072'7- K x 81' v b W l£«5Vi»t - ftM ib i'r K i & 7 / / P I^ O S 4?"


    OCR Scan     		PDF LE28C1001 AT-90/12 LE28C1001AM, 90na/l20n8 10VlDalà 128/V 525mil) LE28C1001AM TSOP32 52797HKXf HX8t irf 3205 a 405-v1

    TC584000F

    Abstract: 512X8 TC584000FT TC584000P TC584000TR TC584000
    Text: T O S H I B A M O S D I G I T A L I N T E G R A T E D CI RCUI T INTEGRATED CIRCUIT TOSHIBA T C 5 8 4 0 0 0 P / F / FT / TR TECHNICAL DATA SI LI CON G A T E C M O S TENTATIVE DATA 4M EG A BIT 524,288 W ORD x 8 BIT CIV OS NAND E2PROM DESCRIPTION The TC584000P / F I F T / TR is a 4M bits electrically erasable and programmable nonvolatile memory


    OCR Scan     		PDF TC584000P/F/FT TC584000P 512KX8 512-byte TC584000P/F/FT/TR TC584000P/F/FT/TR-16 TSOP44-P-4QOB TC584000F 512X8 TC584000FT TC584000TR TC584000