SOP32 525mil
Abstract: SOP32 525-mil
Text: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the
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32Pin
525mil)
ED-7303A)
SOP32 525mil
SOP32
525-mil
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i232
Abstract: 525mil
Text: 32P2M-A Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 JEDEC Code – Weight g 1.29 Lead Material Alloy 42 e 17 E Recommended Mount Pad Symbol 1 16 F A A2 D e y L b A1 L1 HE e1 I2 32 b2 A A1 A2 b c D E e HE L L1 y c Detail F b2 e1 I2 Dimension in Millimeters
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32P2M-A
32pin
525mil
OP32-P-525-1
i232
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SOP32 525mil
Abstract: No abstract text available
Text: 32P2M-B Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 Weight g 1.29 JEDEC Code – Lead Material Alloy 42 e I2 A 17 e1 32 b2 1 F Symbol L1 HE E Recommended Mount Pad A A1 A2 b c D E e HE L L1 y 16 y b L e A1 A2 D c Detail F b2 e1 I2 Dimension in Millimeters
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32P2M-B
32pin
525mil
OP32-P-525-1
SOP32 525mil
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SOP32 525mil
Abstract: FA-1 SOP32
Text: E HE 1 32 b EIAJ Package Code SOP32-P-525-1.27 D e JEDEC Code – y 16 17 Weight g 1.29 A Lead Material Alloy 42 L1 32P2M-A A2 c Detail F F A1 e1 L b2 b2 e1 I2 A A1 A2 b c D E e HE L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 3.05
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OP32-P-525-1
32P2M-A
32pin
525mil
SOP32 525mil
FA-1
SOP32
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SOP32 525mil
Abstract: SOP32
Text: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定(ED-7303A)に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。
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32Pin
525mil)
ED-7303A
SOP32 525mil
SOP32
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BS62LV1024TI
Abstract: BS62X FS6S0765RCHSYDT BS62XV1024 TSOP-32 BS62LV1024SC
Text: BSI Extremely Low Power/Voltage CMOS SRAM 128K X 8 bit BS62XV1024 ! FEATURES ! DESCRIPTION • Extremely low operation voltage : 1.2V ~ 2.4V • Extremely low power consumption : Vcc = 1.5V 10mA Max. write current 0.5mA (Max.) read current 0.005uA (Typ.) CMOS standby current
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BS62XV1024
005uA
250ns
BS62XV1024
R0201-BS62LV1024
BS62LV1024
-40oC
BS62LV1024TI
BS62X
FS6S0765RCHSYDT
TSOP-32
BS62LV1024SC
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HY628100BLLG-55
Abstract: HY628100B-LLG55 55NS BS62LV1029 BS62LV1029SC BS62LV1029SC-55 BS62LV1029STC BS62LV1029TC HY628100B E12855
Text: APPROVED MANUFACTURERS LIST FOR WEB PARTS 650-0025 ITEM NUMBER -WEB PART DESCRIPTION IC SRAM 128K X 8 5V 55NS SOIC SMT REVISION HISTORY Rev D ECO # E12099 RELEASE TO WEB STORE. PREVIOUSLY ID'D AS 100-0007. Description of Change Proj Eng E E12855 APPROVE BRILLIANCE SEMICONDUCTOR. REMOVE OLD SOURCES.
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E12099
E12855
32pin
525mil
8x20mm
HY628100BLLG-55
HY628100B-LLG55
55NS
BS62LV1029
BS62LV1029SC
BS62LV1029SC-55
BS62LV1029STC
BS62LV1029TC
HY628100B
E12855
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TC534000AP
Abstract: a13c
Text: TC534000AP/AF 4M BIT 512K W ORD x 8 BIT CMOS MASK ROM PRELIMINARY DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 624,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the
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TC534000AP/AF
TC534000AP/AF
288words
TC534000AP
150ns,
600mil
32pin
525mil
a13c
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A18D0
Abstract: TC534000AP
Text: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the
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TC534000AP/AF
288words
TC534000AP
150ns,
TC534000AP/
600mil
32pin
525mil
A18D0
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TC53400
Abstract: TC534000P
Text: 4M BIT 512K WORD X 8 BIT CMOS MASK ROM DESCRIPTION The TC534000P/F is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 200ns /250ns, an operation current of 30mA at 5MHz
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TC534000P/F
288words
200ns
/250ns,
600mil
32pin
525mil
TC53400
TC534000P
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Untitled
Abstract: No abstract text available
Text: 4M BIT 512K W O RD x 8 BIT CMOS MASK ROM DESCRIPTION The TC534000P/F is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 200ns/250ns, an operation current of 30mA at 5MHz
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TC534000P/F
288words
200ns/250ns,
20ixA.
600mil
32pin
525mil
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TCS3200
Abstract: TC532000
Text: 2 M B IT 2 5 6 K W O R D X 8 B IT C M O S M A S K R O M D E S C R IP T IO N The TC 532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The TC532000AP / A F is fabricated using Toshiba’s advanced CMOS technology which provides the
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32000A
TC532000AP
150ns,
TCS32000AP
TC532000A
600mil
32pin
525mil
150ns
TCS3200
TC532000
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SOP32 525mil
Abstract: DIP32 AF-15
Text: m ÈÊÈÊm 2M BIT 2 5 6 K W O R D X 8 B IT CM O S M A S K ROM DESCRIPTION The TC532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The T C 532000A P/A F is fabricated using Toshiba’s advanced CMOS technology which provides the
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TC532000AP/AF
150ns,
20/aA.
600mil
32pin
525mil
SOP32 525mil
DIP32
AF-15
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E 102H transistor
Abstract: 2SC 3205 TRANSISTOR 2Sc 3205 ML100 SOP32 525mil CE-70
Text: I Ordering number : EN3K4701 CMOS LSI LC33864P, M, PL, ML-70/80/10 SA\YO 512 K 65536 words x 8 bits Pseudo-SRAM Preliminary Overview Package Dimensions The LC33864 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized
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ENiX-4701
LC33864P,
ML-70/80/10
LC33864
32-pin
450mil)
li-11-
OP28D
E 102H transistor
2SC 3205
TRANSISTOR 2Sc 3205
ML100
SOP32 525mil
CE-70
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HX8t
Abstract: LE28C1001AM LE28C1001 irf 3205 a 405-v1
Text: KNo N*5720 / V 0 .^ 5 7 2 0 52797 CMOS LSI L E 2 8 C 1 1 A M , A T - 9 / 1 2 i m 3 1 7 2 2 - ^ 8 x 4KB ^ / / / /„ «It*' ^ / / « l ¿ E i k . M . .^¡1 / _ LE28C1001AM, A T Ii, 131072'7- K x 81' v b W l£«5Vi»t - ftM ib i'r K i & 7 / / P I^ O S 4?"
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LE28C1001
AT-90/12
LE28C1001AM,
90na/l20n8
10VlDalÃ
128/V
525mil)
LE28C1001AM
TSOP32
52797HKXfÂ
HX8t
irf 3205 a
405-v1
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TC584000F
Abstract: 512X8 TC584000FT TC584000P TC584000TR TC584000
Text: T O S H I B A M O S D I G I T A L I N T E G R A T E D CI RCUI T INTEGRATED CIRCUIT TOSHIBA T C 5 8 4 0 0 0 P / F / FT / TR TECHNICAL DATA SI LI CON G A T E C M O S TENTATIVE DATA 4M EG A BIT 524,288 W ORD x 8 BIT CIV OS NAND E2PROM DESCRIPTION The TC584000P / F I F T / TR is a 4M bits electrically erasable and programmable nonvolatile memory
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TC584000P/F/FT
TC584000P
512KX8
512-byte
TC584000P/F/FT/TR
TC584000P/F/FT/TR-16
TSOP44-P-4QOB
TC584000F
512X8
TC584000FT
TC584000TR
TC584000
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