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    SONY HIGH SPEED BICMOS SYNCHRONOUS STATIC RAM Search Results

    SONY HIGH SPEED BICMOS SYNCHRONOUS STATIC RAM Result Highlights (5)

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    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    SONY HIGH SPEED BICMOS SYNCHRONOUS STATIC RAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cxk77b3611

    Abstract: KJE 6A
    Text: SONY CXK77B3611 32,768-WORD by 36-BIT HIGH SPEED BiCMOS SYNCHRONOUS STATIC RAM -5/6/7 Advanced Information Description The CXK77B3611 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 32,768-words by 36-bits. This synchronous SRAM integrates input registers, high speed SRAM, output registers/latches and write buffers onto


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    CXK77B3611 768-WORD 36-BIT CXK77B3611 768-words 36-bits. 3fl53fl3 00Q7423 32KX36-6, KJE 6A PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B3641GB CXK77B3641 072-words 36-bits. page-19) page-10 Page-11) 128Kx36, PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B3641GB CXK77B3641 072-words 36-bits. page-19) page-10 Page-11) 128Kx36, PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B3640GB A/4/45A/45 CXK77B3640 072-words 36-bits. page-13 page-21) 128Kx36, PDF

    octal tri state buffer ic

    Abstract: sony SA10 SA11 SA12 SA14 SA17 CXK77B1840GB
    Text: SONY CXK77B1840GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original
    CXK77B1840GB A/4/45A/45 CXK77B1840 144-words 18-bits. page-13 page-21) page-25) 256Kx18, octal tri state buffer ic sony SA10 SA11 SA12 SA14 SA17 CXK77B1840GB PDF

    octal tri state buffer ic

    Abstract: CXK77B3641GB SA10 SA11 SA12 SA13 SA14 SA15 SA16 CXK77B3641GB-45
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original
    CXK77B3641GB CXK77B3641 072-words 36-bits. page-19) page-10 Page-11) 128Kx36, octal tri state buffer ic CXK77B3641GB SA10 SA11 SA12 SA13 SA14 SA15 SA16 CXK77B3641GB-45 PDF

    octal tri state buffer ic

    Abstract: sony SA10 SA11 SA12 SA13 SA14 SA15 SA17 CXK77B1841GB
    Text: SONY CXK77B1841GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original
    CXK77B1841GB CXK77B1841 144-words 18-bits. page-19) page-10 page-11) 256Kx18, octal tri state buffer ic sony SA10 SA11 SA12 SA13 SA14 SA15 SA17 CXK77B1841GB PDF

    CXK77B1840GB

    Abstract: SA12 SA13 SA14 SA15 SA17
    Text: CXK77B1840GB SONY 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM (256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B1840GB A/45A CXK77B1840 144-words 18-bits. page-13 page-21) page-25) 256Kxl8, CXK77B1840GB SA12 SA13 SA14 SA15 SA17 PDF

    CXK77B1841GB

    Abstract: SA12 SA13 SA14 SA15 SA16 SA17
    Text: SONY CXK77B1841GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B1841GB CXK77B1841 144-words 18-bits. page-19) page-10 page-11) 256Kxl8, SA12 SA13 SA14 SA15 SA16 SA17 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B1840GB 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B1840GB A/45A CXK77B1840 144-words 18-bits. 925i2 page-13 page-21) page-25) 256Kxl8, PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B1840GB 4A/45A 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B1840GB A/45A CXK77B1840 144-words 18-bits. 925i2 page-13 page-21) page-25) PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B1840GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1840 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B1840GB A/4/45A/45 CXK77B1840 144-words 18-bits. page-13 page-21) page-25) PDF

    CXK77B3640GB

    Abstract: SA12 SA13 SA14 SA15 SA16
    Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


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    CXK77B3640GB A/4/45A/45 CXK77B3640 072-words 36-bits. 075i2 page-13 page-21) 128Kx36, SA12 SA13 SA14 SA15 SA16 PDF

    CXK77B3641GB

    Abstract: SA12 SA13 SA14 SA15 SA16
    Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM , output registers/latches, and a one-deep write


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    CXK77B3641GB CXK77B3641 072-words 36-bits. page-20) page-19) page-10 Page-11) 128Kx36, CXK77B3641GB SA12 SA13 SA14 SA15 SA16 PDF

    octal tri state buffer ic

    Abstract: sony CXK77B3640GB SA10 SA11 SA12 SA14 SA16
    Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write


    Original
    CXK77B3640GB A/4/45A/45 CXK77B3640 072-words 36-bits. page-13 page-21) 128Kx36, octal tri state buffer ic sony CXK77B3640GB SA10 SA11 SA12 SA14 SA16 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY -6/7 CXK77B1810 6 5 ,5 3 6 -w o r d by 18- b it h i g h s p e e d BiCMOS s y n c h r o n o u s s t a t i c r a m Advanced Information Description The CXK77B1810 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 65,536-words by 18-bits. This synchronous SRAM integrates input registers,


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    CXK77B1810 CXK77B1810 536-words 18-bits. fl3fi23Ã 64KX18-6, PDF

    3B-36

    Abstract: 77B18
    Text: SONY CXK77B1810 6 5 ,5 3 6 - w o r d by 1 8 - b it h i g h s p e e d BiCMOS s y n c h r o n o u s s t a t i c r a m -5/6/7 Advanced Information Description The CX K 77B1810 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 65,536-words by


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    CXK77B1810 77B1810 536-words 18-bits. 64KX18-5. 64KX18-5, 3B-36 77B18 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY I CXK77B3611AGB » High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


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    CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA BGA-119P-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3611AGB“ High Speed Bi-CMOS Synchronous Static RAM Preliminary Description 119 pin BGA Plastic The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


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    CXK77B3611AGBâ CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA A3fl23fl3 CXK77B3611AGB BGA-119P-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77B3611AGB* High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


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    CXK77B3611AGB* CXK77B3611AGB-5/6 200MHz CXK77B3611AGB-5 167MHz 119TBGA CXK77B3611AGB PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B181OAGB-5/6 is a high speed 1M bit 119 pin BGA Plastic Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


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    CXK77B1810AGB-5, CXK77B1810AGB-6 CXK77B181OAGB-5 200MHz 167MHz 119TBG PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY C X K 7 7 B 1 8 High Speed Bi-CMOS Synchronous Static RAM 1 A G B s * Preliminary Description The CXK77B181OAGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


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    CXK77B181OAGB-5/6 CXK77B181OAGB-5 167MHz ci0000000Â PDF

    Untitled

    Abstract: No abstract text available
    Text: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a


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    CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz 119TBGA CXK77B3611AGB BGA-119P-01 PDF

    CXK77B3611AGB

    Abstract: CXK77B3611AGB-5
    Text: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input


    Original
    CXK77B3611AGB CXK77B3611AGB-5/6 CXK77B3611AGB-5 200MHz 167MHz CXK77B3611AGB BGA-119P-01 CXK77B3611AGB-5 PDF