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    Untitled

    Abstract: No abstract text available
    Text: 128Kx36,256Kx 18,3.3V SYNCHRONOUS SRAMS WITH PRELIM INARY 2.5V I/O, FLOW-THROUGH OUTPUTS, IDT71V2577 BURST COUNTER, ¡0 7 7 1 V2579 SINGLE CYCLE DESELECT Description Features The IDT71V2577/79 are high-speed SRAMs organized as * 128K x 3 6 ,256K x 18 memory configurations


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    128Kx36 256Kx IDT71V2577 V2579 IDT71V2577/79 36/256K 117MHz 100MHz 87MHz PDF

    micron cmos 1988

    Abstract: No abstract text available
    Text: ADVANCE 256K X 18/128K x 36 2.5V I/O, FLOW -THROUGH LATE WRITE SRAM l^ ic n o N Dual Clock and Single Clock FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)


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    18/128K MT59L256V18F MT59L128V36F MT50L2S6V18F micron cmos 1988 PDF