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    SOI SWITCH Search Results

    SOI SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy
    ICL7660SMTV Rochester Electronics LLC Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    SOI SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CXA4403GC

    Abstract: No abstract text available
    Text: SPDT SOI Antenna Switch CXA4403GC Description The CXA4403GC is a SPDT antenna switch for 3G/LTE switching applications. The CXA4403GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss. Features


    Original     		PDF CXA4403GC CXA4403GC

    Untitled

    Abstract: No abstract text available
    Text: SPDT SOI Antenna Switch CXA4403GC Description The CXA4403GC is a SPDT antenna switch for 3G/LTE switching applications. The CXA4403GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss. Features


    Original     		PDF CXA4403GC CXA4403GC CXA440ƒ

    Untitled

    Abstract: No abstract text available
    Text: SP3T SOI Antenna Switch for Diversity CXA2973GC Description CXA2973GC is a low power SP3T antenna switch for diversity switching applications. CXA2973GC has a 1.8V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA2973GC CXA2973GC 800MHz

    Untitled

    Abstract: No abstract text available
    Text: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA4011GC CXA4011GC CXA4010

    Untitled

    Abstract: No abstract text available
    Text: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


    Original     		PDF CXA2947GC CXA2947

    RF3A

    Abstract: No abstract text available
    Text: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


    Original     		PDF CXA4410GC CXA4410 RF3A

    CXA4

    Abstract: No abstract text available
    Text: Dual-SP4T SP4Tx2 SOI Antenna Switch CXA4410GC Description The CXA4410 is Rx power SP4Tx2 antenna switch for balanced signal switching application. The CXA4410 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


    Original     		PDF CXA4410GC CXA4410 CXA4

    Untitled

    Abstract: No abstract text available
    Text: SPDT High Power SOI Antenna Switch CXA4011GC Description The CXA4011GC is a SPDT antenna switch for GSM/3G/LTE switching applications. The CXA4011GC has a 1.8V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA4011GC CXA4011GC

    Untitled

    Abstract: No abstract text available
    Text: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA2985GC CXA2985GC

    Untitled

    Abstract: No abstract text available
    Text: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


    Original     		PDF CXA2947GC CXA2947

    CXA2985GC

    Abstract: CXA2985 SOI RF switch CXA29
    Text: SP5T SOI Antenna Switch for WCDMA Diversity CXA2985GC Description The CXA2985GC is a low power SP5T antenna switch for WCDMA diversity switching applications. The CXA2985GC has a 1.8 V CMOS compatible decoder. The Sony Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA2985GC CXA2985GC CXA2985 SOI RF switch CXA29

    Untitled

    Abstract: No abstract text available
    Text: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA2984GC CXA2984 CXA2984GC-T9

    Untitled

    Abstract: No abstract text available
    Text: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA2984GC CXA2984

    "RF Switch"

    Abstract: 20 qfn 3x3 RF SWITCH RF Switches QFN 4X4 P6102 AT4510 Honeywell OR SenSym rf 4*4 mm QFN Digital Attenuator
    Text: 0275-000.qxp 5/15/07 12:29 PM Page 1 RF / Microwave Services HIGH PERFORMANCE SOI RF SWITCHES AND DIGITAL ATTENUATORS Short-Form Product Catalog 0275-000.qxp 5/15/07 12:29 PM Page 2 RF / Microwave Services Short-Form Product Catalog High Performance SOI CMOS RF Switches and Digital Attenuators


    Original     		PDF HRF-SW1000 HRF-SW1001 HRF-SW1020 P61-0275-000-001 "RF Switch" 20 qfn 3x3 RF SWITCH RF Switches QFN 4X4 P6102 AT4510 Honeywell OR SenSym rf 4*4 mm QFN Digital Attenuator

    Untitled

    Abstract: No abstract text available
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Hone8295

    CXA4416

    Abstract: No abstract text available
    Text: SP6T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4416GC Description The CXA4416 is the SP6T antenna diversity switch for WCDMA/3G/LTE applications. The CXA4416 has a 1.8V CMOS compatible decoder with MIPI function for Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA4416GC CXA4416

    Untitled

    Abstract: No abstract text available
    Text: SP4T SOI Antenna Diversity Switch, and 3G/LTE Tx Switch CXA2984GC Description The CXA2984 is the SP4T antenna diversity switch for WCDMA, and Tx switch for 3G/LTE applications. The CXA2984 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA2984GC CXA2984

    HX6228

    Abstract: honeywell memory sram
    Text: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is


    Original     		PDF HX6228 Honeywe-8295 HX6228 honeywell memory sram

    HX6856

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES OTHER RADIATION • Full Military Temperature Operation -55°C to125°C Fabricated with RICMOS” Silicon on Insulator (SOI) 0.7 |im Process • Access Time < 25 ns


    OCR Scan     		PDF HX6828 1x106 1x101 1x1012rad to125 40-Lead HX6856

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6256 1x106ra 1x10l4 1x101 4551A72

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.6 j^m Low Power Process (Leff= 0.45 |im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6228 1x106 1x101 1x109 0014flb 6C634

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 128K x 8 STATIC RAM— Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS'“ IV Silicon on Insulator SOI 0.6 nm Low Power Process (Lef)= 0.45 (im) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6228 1x101 1x109 32-Lead

    Untitled

    Abstract: No abstract text available
    Text: b3E D MSS1Ö72 ÜDDlQQb SS2 « H O N S Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES O THER RADIATION Fabricated with RICM OS Silicon on Insulator SOI 1.2 (o.m Process - Latchup Free Total Dose Hardness through


    OCR Scan     		PDF HX6664 1x107 1x101

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Preliminary Military & Space Products 32K x 8 STATIC RAM— Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS'” IV Silicon on Insulator SOI 0.7 (im Low Power Process (Letl= 0.55 urn) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF 1x106rad HLX6256 1x109 28-Lead CDIP2-T28