MBN1200E33E
Abstract: gate turn-off igbt control
Text: IGBT MODULE MBN1200E33E FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.
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MBN1200E33E
000cycles)
MBN1200E33E
gate turn-off
igbt control
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mbn1000e33e2
Abstract: MBN1000
Text: IGBT MODULE MBN1000E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.
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MBN1000E33E2
000cycles)
mbn1000e33e2
MBN1000
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10002 R3 MBN1500E33E3 FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.
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IGBT-SP-10002
MBN1500E33E3
000cycles)
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z7my
Abstract: Z7my7g7 MBM1200E17E z7m-y7g7 z7m-y7g7# T61200
Text: IGBT MODULE MBM1200E17E Preliminary SPEC. OUTLINE DRAWING Unit in mm FEATURES * Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. * Low driving power: Low input capacitance advanced trench gate. * Low noise recovery: Ultra soft fast recovery diode.
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MBM1200E17E
000cycles)
z7my
Z7my7g7
MBM1200E17E
z7m-y7g7
z7m-y7g7#
T61200
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08020 R4 MBM500E33E2 Preliminary Specification FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.
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IGBT-SP-08020
MBM500E33E2
000cycles)
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QT10031U21MS
Abstract: QT10044U21MS QT10210U21MS 3 phase, 415v and 11 kw induction motor QT20058 QT10017U21MS QT1010 QT10310N21MS 18S-G QT10210N21MS
Text: GE Consumer & Industrial Power Protection New ASTAT XT Digital soft starters for 3ph standard induction motors GE imagination at work ASTAT XT ASTAT XT D Digital soft starters for 3ph standard induction motors in Digital Soft Starters G new ASTAT XT solid state soft starter features microprocessor control
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H-1340
B-9000
C/4594/E/EX
QT10031U21MS
QT10044U21MS
QT10210U21MS
3 phase, 415v and 11 kw induction motor
QT20058
QT10017U21MS
QT1010
QT10310N21MS
18S-G
QT10210N21MS
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DIODE A112
Abstract: ph-77d diode 71DH acc8
Text: Spec.No.IGBT-SP-06039R3 P 1 IGBT MODULE MBN3600E17E Preliminary SPECIFICATION FEATURES OUTLINE DRAWING ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.
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IGBT-SP-06039R3
MBN3600E17E
000cycles)
DIODE A112
ph-77d diode
71DH
acc8
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MBN1500E33E2
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
MBN1500E33E2
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-05004
MBN1200E33E
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-09008
MBN750H65E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-05015
MBN800E33E
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08006 R2 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08006
MBN1000E33E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-09008
MBN750H65E2
000cycles)
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mbn1000e33e2
Abstract: Hitachi DSA00281
Text: IGBT MODULE Spec.No.IGBT-SP-08006 R1 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08006
MBN1000E33E2
000cycles)
mbn1000e33e2
Hitachi DSA00281
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95020
Abstract: PA4201 019 dfn 5.1 home theatre circuit diagram home theater 5.1 circuit diagram
Text: PA4201-PUNK POP-UP NOISE KILLER FEATURES Extremely low supply current <1µA >45dB mute attenuation Shunt operation. SOFT mute during normal operation. Built-in expansion capability. Soft Mute out for driving additional channels. Instant Power UP and Power DOWN muting.
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PA4201-PUNK
PA4201
EIA-481.
Suffix-T13
95020
PA4201
019 dfn
5.1 home theatre circuit diagram
home theater 5.1 circuit diagram
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-05004
MBN1200E33E
000cycles)
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MBN1500E33E2
Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
MBN1500E33E2
ls290
MBN1500E33E
nff 16-102
IC1500
GC 72
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08002
MBN1500E33E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05015 R3 MBN800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-05015
MBN800E33E
000cycles)
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shin-etsu g747
Abstract: silicon thermal grease g747
Text: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08038
MBL800E33E
000cycles)
shin-etsu g747
silicon thermal grease g747
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Hitachi DSA00281
Abstract: 330nf 250 v
Text: IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-10002
MBN1500E33E3
000cycles)
Hitachi DSA00281
330nf 250 v
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08006 R3 MBN1000E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08006
MBN1000E33E2
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10002 R5 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate.
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IGBT-SP-10002
MBN1500E33E3
000cycles)
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silicon thermal grease g747
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-08038 R1 MBL800E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.
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IGBT-SP-08038
MBL800E33E
000cycles)
silicon thermal grease g747
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