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    MBN1200E33E Price and Stock

    Power Integrations 1SP0635D2S1C-MBN1200E33E

    Gate Drivers ONLY for Hitachi MBN1200E33E conformal coated module
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    Mouser Electronics 1SP0635D2S1C-MBN1200E33E
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    Power Integrations 1SP0635V2M1C-MBN1200E33E

    Gate Drivers ONLY for Hitachi MBN1200E33E conformal coated module
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    Power Integrations 1SP0635S2M1C-MBN1200E33E

    Gate Drivers ONLY for Hitachi MBN1200E33E conformal coated module
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    Power Integrations 1SP0635D2S1-MBN1200E33E

    Gate Drivers ONLY for Hitachi MBN1200E33E module
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    Mouser Electronics 1SP0635D2S1-MBN1200E33E
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    Power Integrations 1SP0635V2M1-MBN1200E33E

    Gate Drivers ONLY for Hitachi MBN1200E33E module
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    Mouser Electronics 1SP0635V2M1-MBN1200E33E
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    EBV Elektronik 1SP0635V2M1-MBN1200E33E 14 Weeks 6
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    MBN1200E33E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-05004 MBN1200E33E 000cycles)

    MBN1200E33E

    Abstract: gate turn-off igbt control
    Text: IGBT MODULE MBN1200E33E FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise recovery: Ultra soft fast recovery diode.


    Original     		PDF MBN1200E33E 000cycles) MBN1200E33E gate turn-off igbt control

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05004 R7 MBN1200E33E Silicon N-channel IGBT 3300V E version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		PDF IGBT-SP-05004 MBN1200E33E 000cycles)

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    IGBT2

    Abstract: hitachi transistor igbt GTO 100A 500V MBN1200E33E DIODE m7 dic 200a 300v mosfet G747 YG6260 12v igbt igbt p11
    Text: （資料番号；NO.IGBT-HI-00002 R2） 高耐圧 IGBT モジュール 取扱説明書 株式会社 日立製作所 電力システム社 電機システム事業部 ＜パワーデバイス本部・開発部＞ 2009.12 月発行 2009 年 HITACHI Ltd. － 重 要 な お 知 ら せ －


    Original     		PDF IGBT-HI-00002 10AmA/d) 10mA/d) UL94VO IGBT2 hitachi transistor igbt GTO 100A 500V MBN1200E33E DIODE m7 dic 200a 300v mosfet G747 YG6260 12v igbt igbt p11

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12