Untitled
Abstract: No abstract text available
Text: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable,
|
Original
|
PDF
|
LFPAK56
AEC-Q101
OT223,
com/group/12466
|
so8 footprint
Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon
|
Original
|
PDF
|
OT669)
PSMN5R5-60YS)
so8 footprint
sot669 package
SO8 package
PSMN026-80YS
sot669
PSMN012-100YS
PSMN1R2-25YL
PSMN1R3-30YL
PSMN1R5-25YL
PSMN1R7-30YL
|
SOT1023
Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in
|
Original
|
PDF
|
OT669
OT1023)
PSMN1R2-25YL)
high-efficien84
SOT1023
lfpak sot1023
sot669 footprint
LFPAK footprint
so8 footprint
PSMN7R0-30YL
PSMN1R2-25YL
PSMN1R3-30YL
PSMN3R0-30YL
PSMN3R5-30YL
|
Untitled
Abstract: No abstract text available
Text: PA K SOT1023 LF LFPAK; Power-SO8; Tape reel; standard product orientation 12NC ending 115 Rev. 1 — 26 September 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel
|
Original
|
PDF
|
OT1023
001aak291
OT1023
|
to220 pcb footprint
Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
Text: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.
|
Original
|
PDF
|
soldering/sot669
to220 pcb footprint
"thermal via" PCB D2PAK
LFPAK footprint Renesas
LFPAK footprint
POWERPAK SO8
TO220 HEATSINK DATASHEET
thermal PCB D2PAK
sot669
lfpak
LFPAK package
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y3R5-40E N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y3R5-40E
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K5R1-30E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK7K5R1-30E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K12-60E Dual N-channel 60 V, 9.3 mΩ standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK7K12-60E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K52-60E Dual N-channel 60 V, 45 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK7K52-60E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y7R2-60E N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y7R2-60E
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K18-40E Dual N-channel 40 V, 19 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK7K18-40E
LFPAK56D
|
72560
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y25-60E N-channel 60 V, 25 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y25-60E
LFPAK56
72560
|
code marking 40E
Abstract: mosfet
Text: LF PA K 56 BUK7Y4R4-40E N-channel 40 V, 4.4 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y4R4-40E
LFPAK56
code marking 40E
mosfet
|
76E-06
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y6R0-60E N-channel 60 V, 6.0 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y6R0-60E
LFPAK56
76E-06
|
|
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y8R7-60E N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y8R7-60E
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y25-80E N-channel 80 V, 25 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y25-80E
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y43-60E N-channel 60 V, 43 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y43-60E
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: LF PA K BUK7Y7R8-80E N-channel 80 V, 7.8 mΩ standard level MOSFET in LFPAK56 20 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y7R8-80E
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K8R7-40E Dual N-channel 40 V, 8.5 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK7K8R7-40E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y59-60E N-channel 60 V, 59 mΩ standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y59-60E
LFPAK56
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK7K6R2-40E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K5R6-30E Dual N-channel 30 V, 5.6 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK7K5R6-30E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 21 August 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power SO8 package using TrenchMOS technology. This product has been designed and qualified to
|
Original
|
PDF
|
BUK9K17-60E
LFPAK56D
|
Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y19-100E N-channel 100 V, 19 mΩ standard level MOSFET in LFPAK56 6 November 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
|
Original
|
PDF
|
BUK7Y19-100E
LFPAK56
|
