APM4408
Abstract: J-STD-020A ON 4408
Text: APM4408 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/21A, RDS ON = 3.5mΩ(typ.) @ VGS = 10V RDS(ON) = 5mΩ(typ.) @ VGS = 4.5V RDS(ON) = 8mΩ(typ.) @ VGS = 2.5V • • • S 1 8 D S 2 7 D S 3 6 D G 4 5 D High Density Cell Design Reliable and Rugged
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APM4408
0V/21A,
APM4408
J-STD-020A
ON 4408
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4925 B
Abstract: 4925 B mosfet 4925 B transistor APM4925 8A330
Text: APM4925 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-6.1A, RDS ON = 24mΩ(typ.) @ VGS = -10V S1 1 8 D1 Super High Density Cell Design G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 RDS(ON) = 30mΩ(typ.) @ VGS = -4.5V
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APM4925
-30V/-6
4925 B
4925 B mosfet
4925 B transistor
APM4925
8A330
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APM9435
Abstract: 9435 mosfet 9435 so8 mosfet 9435 to 9435 sop-8 9435 power 9435 mosfet 9435 tr 9435 9435 so package
Text: APM9435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.6A, RDS ON = 52mΩ(typ.) @ VGS = -10V RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D
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APM9435
-30V/-4
APM9435
9435 mosfet
9435 so8
mosfet 9435 to
9435 sop-8
9435 power
9435
mosfet 9435
tr 9435
9435 so package
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9430 mosfet
Abstract: 9430 so-8 A102 APM9430
Text: APM9430 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/4A, RDS ON = 40mΩ(typ.) @ VGS = 4.5V RDS(ON) = 110mΩ(typ.) @ VGS = 2.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4
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APM9430
9430 mosfet
9430 so-8
A102
APM9430
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GS431N
Abstract: No abstract text available
Text: Adjustable Precision Shunt Regulators Product Description Features The GS431 is a three-terminal adjustable shunt regulator with specified thermal stability. The output voltage may be set to any value between VREF approximately 2.5V and 36V with two external resistors.
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GS431
30ppm/Â
100mA
Lane11
GS431N
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4430 mosfet
Abstract: mosfet 4430 ANPEC A102 APM4430 4430 8 pin ao 4430
Text: APM4430 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/23A , RDS ON =4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 5 4 6 3 7 2 8 1 Reliable and Rugged SO-8 Package
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APM4430
0V/23A
4430 mosfet
mosfet 4430
ANPEC
A102
APM4430
4430 8 pin
ao 4430
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4835D
Abstract: 4835 D 4835 mosfet mosfet 4835 APM4835 APM4835 mosfet 7F MARKING 4835 so-8
Text: APM4835 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G
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APM4835
-30V/-8A,
4835D
4835 D
4835 mosfet
mosfet 4835
APM4835
APM4835 mosfet
7F MARKING
4835 so-8
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APM4427
Abstract: 4427 mosfet Ao 4427
Text: APM4427 P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4A , RDS ON =88mΩ(typ.) @ VGS=-10V RDS(ON)=147mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • S 1 8 D S 2 7 D S 3 6 D G 4 5 D Reliable and Rugged
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APM4427
-30V/-4A
APM4427
4427 mosfet
Ao 4427
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4435 mosfet
Abstract: Mi 4435 MOSFET 4435 APM4435 4435 so8 4435D 4435 B Mos-Fet apm4435 4435 marking 4435
Text: APM4435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V S 1 8 D Super High Density Cell Design S 2 7 D Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • •
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APM4435
-30V/-8A,
4435 mosfet
Mi 4435
MOSFET 4435
APM4435
4435 so8
4435D
4435 B
Mos-Fet apm4435
4435
marking 4435
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"MOSFET A5
Abstract: APM4410 4410 SO-8 4410 mosfet A102
Text: APM4410 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/11.5A, RDS ON = 9mΩ(typ.) @ VGS = 10V RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V • • • High Density Cell Design Reliable and Rugged S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Package SO − 8
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APM4410
0V/11
"MOSFET A5
APM4410
4410 SO-8
4410 mosfet
A102
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Str W 5754
Abstract: cny 76 IRFK2D054 Str 5754 L1298 DIODE 76A e78996 india IRFK2F054 60788 772200
Text: Bulletin E2790 International Iîsr I Rectifier IRFK2D054, IRFK2F054 Isolated B ase Power H E X -p a k A s s e m b ly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E2790
IRFK2D054,
IRFK2F054
E78996.
T0-240
10lTlQ
fa336
S-162
CH-8032ZURICH.
IL60067.
Str W 5754
cny 76
IRFK2D054
Str 5754
L1298
DIODE 76A
e78996 india
IRFK2F054
60788
772200
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ST-2262
Abstract: machlett thyratron Ignitron 496 Scans-0017685 vacuum tubes ML7480A ML-7480A Raytheon Company NATIONAL ELECTRONIC TUBE company industrial tube company
Text: The M achlett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 ISSU E D 4-68 Tel. 203-348-7511 • TW X 710-474-1744 Ï □ G e n e ra l Purpose Triode 80 kW C W DESCRIPTION T h e M L -7 4 8 0 A is a general-purpose vapor-cooled triode conservatively design ed for 50-75 k W industrial heating
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ML-7480A
P-512126,
ML-7480A
ST-2262
machlett thyratron
Ignitron 496
Scans-0017685
vacuum tubes
ML7480A
Raytheon Company
NATIONAL ELECTRONIC TUBE company
industrial tube company
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ML-5682
Abstract: machlett 5682 high power Triode for induction heating A-8485 5682K 1S20 550C machlett triode triode push-pull circuit tempilaq
Text: The M achlett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 Tel. 203-348-7511 • TW X 203-327-2496 DESCRIPTION The M L -5682 is a general-purpose high-pow er triode su it able for use in A M , FM and T V broad castin g, dielectric and up to 140 k W w ith a w ater flow o f 60 gp m . T h e m axim um
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ML-5682
8485/R3
ML-5682
28II8/R2
EO-273S6/RI
ML-5682K
machlett 5682
high power Triode for induction heating
A-8485
5682K
1S20
550C
machlett triode
triode push-pull circuit
tempilaq
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET IV IF f " / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
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NE4210M01
NE4210M01
NE4210M01-T1
Fin/50
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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GS 069 LF
Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Text: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
T-39-15
GS 069 LF
HCA-120
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lg66a
Abstract: e78996 india E78996 rectifier module IRFK6H450 hex-pak IRFK6J450
Text: Bulletin E27113 International S Rectifier IRFK6H450JRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27113
IRFK6H450
IRFK6J450
E78996.
O-240
CH-8032
IL60067.
NJ07650.
FL32743.
CA90245.
lg66a
e78996 india
E78996 rectifier module
hex-pak
IRFK6J450
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C ELECTRONICS INC_98D 18951 / N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfi D E S C R IP T IO N D e | tiMS7S2S □□Ifl'iSl T | 2SK800 The 2 S K 8 0 0 is N-channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S
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2SK800
T-39-13
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E78996 rectifier module
Abstract: CH-8032 e78996 india j-12000 IRFK6HC50 IRFK6JC50 E27114
Text: Bulletin E27114 International liôËIRprfifier IRFK6HC50,IRFK6JC50 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27114
IRFK6HC50
IRFK6JC50
E78996.
T0-240
CH-8032
IL60067.
NJ07650
943-S754.
FL32743.
E78996 rectifier module
e78996 india
j-12000
IRFK6JC50
E27114
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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Untitled
Abstract: No abstract text available
Text: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli U n i t : m i l l i m e t e r s inches
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DD17A45
MGF1412B
12GHz
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Untitled
Abstract: No abstract text available
Text: PD-91517A International I R Rectifier IRF2807 HEXFET Power MOSFET • • • • • A dvanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = 75V R ü S o n = 0 . 0 1 3 £ 2
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PD-91517A
IRF2807
O-220
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transistor d 2389
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
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NE24283B
NE24283B
transistor d 2389
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063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
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NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
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