SO DIMM 100 Pin Pinout edo
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11T2645HP 2M x 6411/10, 3.3V, EDOMMDD41DSU-001019432. IBM11T2645HP 2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 2Mx64 Extended Data Out SO DIMM
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IBM11T2645HP
EDOMMDD41DSU-001019432.
IBM11T2645HP
2Mx64
VSS/18VCC
104ns
124ns
SA14-4460-04
SO DIMM 100 Pin Pinout edo
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11T1645LP 1M x 6410/10, 3.3V, EDOMMDD41DSU-001019232. IBM11T1645LP 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts
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IBM11T1645LP
EDOMMDD41DSU-001019232.
IBM11T1645LP
1Mx64
VSS/18VCC
104ns
124ns
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SO DIMM 100 Pin Pinout edo
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM11T1645NP 1M x 6410/10, 3.3V, EDOMMDD41DSU-001049432. IBM11T1645NP IBM11T2645NP 1M/2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses
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IBM11T1645NP
EDOMMDD41DSU-001049432.
IBM11T1645NP
IBM11T2645NP
1M/2Mx64
VSS/18VCC
104ns
GA14-4478-01
SO DIMM 100 Pin Pinout edo
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HY51V17804C
Abstract: No abstract text available
Text: HYM5V64214C Z-Series SO DIMM 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM5V64214C Z-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY51V17804C in 28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 pin Zig Zag pin glassepoxy printed circuit board. 0.01µF and 0.1µF decoupling capacitors are mounted for each DRAM.
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HYM5V64214C
2Mx64
2Mx64-bit
HY51V17804C
HYM5V64214CZG/CTZG
144-Pin
A0-A10)
DQ0-DQ63)
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Untitled
Abstract: No abstract text available
Text: HYM5V64214A Z-Series SO DIMM 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM5V64214A Z-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY51V17804B in 28 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 144 pin Zig Zag pin glassepoxy printed circuit board. 0.01µF and 0.1µF decoupling capacitors are mounted for each DRAM.
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HYM5V64214A
2Mx64
2Mx64-bit
HY51V17804B
HYM5V64214AZG/ATZG
144-Pin
16-bit
A0-A10)
DQ0-DQ63)
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IBM13T8644MPB
Abstract: IBM11M4730C4M IBM13T4644MPB
Text: Discontinued 8/99 - last order; 12/99 - last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T4644MPB IBM13T8644MPB 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM
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IBM11M4730C4M
E12/10,
IBM13T4644MPB
IBM13T8644MPB
4/8Mx64
IBM13T8644MPB
IBM13T4644MPB
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Untitled
Abstract: No abstract text available
Text: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8320HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address
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IBM11S1320NL1M
IBM11S1320NN1M
IBM11S8320HP
72-Pin
110ns
256ms
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Untitled
Abstract: No abstract text available
Text: Discontinued 8/99 - last order; 12/99 - last ship IBM13T4644MPC2M x 6411/8/1, 3.3V 14. IBM13T4644MPC 4M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4Mx64 Synchronous DRAM SO DIMM
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IBM13T4644MPC2M
IBM13T4644MPC
4Mx64
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TAA 861 A11
Abstract: IBM DIMM 32MB
Text: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8325HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address
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IBM11S1320NL1M
IBM11S1320NN1M
IBM11S8325HP
72-Pin
110ns
256ms
TAA 861 A11
IBM DIMM 32MB
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taa 861
Abstract: No abstract text available
Text: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8320HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address
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IBM11S1320NL1M
IBM11S1320NN1M
IBM11S8320HP
72-Pin
110ns
256ms
taa 861
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IBM11M4730C4M
Abstract: No abstract text available
Text: Discontinued 8/99 - last order; 12/99 - last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T8644HPB IBM13T8644HPC 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM
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IBM11M4730C4M
E12/10,
IBM13T8644HPB
IBM13T8644HPC
8Mx64
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GA15-5285-05
Abstract: ga15 engine wiring diagram so-dimm 200 IBM11M4730C4M
Text: Discontinued 12/98 - last order; 9/99 last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance:
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IBM11M4730C4M
E12/10,
IBM13T2649NC
2Mx64
GA15-5285-05
ga15 engine wiring diagram
so-dimm 200
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ga15 engine wiring diagram
Abstract: IBM11M4730C4M
Text: Discontinued 12/98 - last order; 9/99 last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM13T4644MC IBM13T1649NC 1M x 64 SDRAM SO DIMM Features • 144 Pin (emerging) JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1Mx64 Synchronous DRAM SO DIMM
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IBM11M4730C4M
E12/10,
IBM13T4644MC
IBM13T1649NC
1Mx64
ga15 engine wiring diagram
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Untitled
Abstract: No abstract text available
Text: IBM11S4325BP IBM11S4325BM 4M x 32 SO D IM M M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tRAc RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns 30ns 35ns U a Access Time From Address ìrc Cycle Time tHPC EDO Mode Cycle Time
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IBM11S4325BP
IBM11S4325BM
72-Pin
104ns
124ns
50H4745
SA14-4458-01
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ov97
Abstract: No abstract text available
Text: “ H V. Y U N D .7— A I } •„ ✓ - • H Y M 5 V 6 4 2 1 4 C Z - S e r i e s SO DIMM 2MX64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The H Y M 5 V 6 4 2 1 4 C Z -S e rie s is a 2Mx64-bit Extended Data Out mode C M O S D R A M m odule consisting of
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2MX64
2Mx64-bit
144-Ph
A0-A10)
DQ0-DQ63)
ov97
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DRAMs
Abstract: Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO
Text: SIEMENS Trends in Memory Technology when CAS goes high again and initiates the next page access. Trends in Memory Technology DRAM speed improvements have historically come from process and photolithography advances. More recent improvements in DRAM performance however, have resulted from
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64M-EDO
4/x72
DRAMs
Dram 168 pin EDO buffered
PQFP-128
Multibank - DRAM
Signal Path Designer
Bus repeater
64MEDO
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simm 72 edo 256
Abstract: No abstract text available
Text: SIEM EN S Trends in Memory Technology Trends in Trends in M em ory Technology w hen CAS goes high again and initiates the next page access. DRAM speed im provem ents have historically com e from process and photolithography advances. More recent im provem ents in DRAM
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64MEDO
i32/x36
simm 72 edo 256
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dq35j
Abstract: 8X64
Text: IBM13T4644MPB IBM13T8644MPB 4M /8M x 64 S D R A M SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency 100 ;fCK j C lock Frequency jtcK \ Clock Cycle
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IBM13T4644MPB
IBM13T8644MPB
4/8Mx64
dq35j
8X64
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ty 8016
Abstract: SO-DIMM 144-pin DQ401
Text: IBM11T2640HP 2M x 64 144 PIN SO DIM M Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • Performance: • System Performance Benefits:
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IBM11T2640HP
110ns
130ns
Vss/18Vcc
256ms
IBM11T2640HP
ty 8016
SO-DIMM 144-pin
DQ401
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Untitled
Abstract: No abstract text available
Text: IBM11T2645HP 2M x 64 144 PIN SO DIMM v •<<t - >-«Ä» Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts
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IBM11T2645HP
2Mx64
Vss/18Vcc
256ms
50H7630
SA14-4460-01
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Untitled
Abstract: No abstract text available
Text: IBM11S1325LP IBM11S2325LP IBM11S1325LM IBM11S2325LM 1M/2M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: tflAC RAS Access Time tcAC CAS Access Time • • • • -60 -6R •70 60ns 60ns 70ns 15ns 17ns 20ns
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IBM11S1325LP
IBM11S2325LP
IBM11S1325LM
IBM11S2325LM
72-Pin
104ns
124ns
128ms
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Untitled
Abstract: No abstract text available
Text: IBM11T4640MP 4M X 64 144 PIN SO DIM M Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • 1Mx64 Fast Page Mode SO DIMM • Performance: •50 -60 tRAC RAS Access Tim e 50ns 60ns tcAC CA S Access Tim e
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IBM11T4640MP
1Mx64
110ns
ss/18V
256ms
IBM11T4640M
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Untitled
Abstract: No abstract text available
Text: IBM11T4645MP 4M Zittii ViumiiiWI ^ unniniwi n m rflu irai»'I TiWTn •■ir nm n i Id HÜ il ii, I I I X 64 144 PIN SO DIMM -iniTi '!»» linm 11 TTf Iil I <>l>n 1*1V iI‘| w riir n<4 Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses
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IBM11T4645MP
1Mx64
ss/18V
256ms
50H7631
SA14-4461
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 S 8 3 2 5 H P 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: High Performance CMOS process Single 3.3V ± 0.3V Power Supply Low active current consumption All inputs & outputs are LVTTL 3.3V compati
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72-Pin
256ms
IBM11S8325HP
75H2026
SA14-4473-00
Q0CHS22
IBM11S8325HP
8Mx32
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