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    SMOS Search Results

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    ADG528ATQ Analog Devices sMOS MULTIPLEXER IC Visit Analog Devices Buy
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    Devtank Ltd OSM-OS-CT3-LORA

    OpenSense (LoRaWAN) by OpenSmart
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    DigiKey OSM-OS-CT3-LORA 5 1
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    SMC Corporation of America SY5240-SMOS-02

    VALVE, SOLENOID, 5 PORT, SY SERIES | SMC Corporation SY5240-SMOS-02
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    SMC Corporation of America SYJ5420-SMOS-M5

    VALVE/SOL, SYJ SERIES | SMC Corporation SYJ5420-SMOS-M5
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    Carlo Gavazzi Holding AG BSG-SMO-U

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    Vishay Intertechnologies SI9945BDY-T1-GE3

    MOSFETs 60V Vds 20V Vgs SO-8
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    SMOS Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SMOS ECS VOLTAGE CONTROLLED OSCILLATOR Original PDF
    SMOS21N50 Sirectifier Power MOSFETs Original PDF
    SMOS26N50 Sirectifier Power MOSFETs Original PDF
    SMOS44N50 Unknown POWER MOSFETS Original PDF
    SMOS44N50D2 Sirectifier Power MOSFETs Original PDF
    SMOS44N50D3 Sirectifier Power MOSFETs Original PDF
    SMOS44N80 Sirectifier Power MOSFETs Original PDF
    SMOS48N50 Unknown POWER MOSFETS Original PDF
    SMOS48N50D2 Sirectifier Power MOSFETs Original PDF
    SMOS48N50D3 Sirectifier Power MOSFETs Original PDF

    SMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    44n50

    Abstract: 48N50
    Text: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30


    Original     		PDF SMOS44/48N50D2, SMOS44/48N50D3 OT-227 5ID25 300us, 00A/us; 80A/us; 44n50 48N50

    16PIN

    Abstract: MPC17533 OUT2B
    Text: Freescale Semiconductor, Inc. M Product Preview SMARTMOS R MPC17533 Freescale Semiconductor, Inc. 2 Channel H-Bridge Driver IC MPC17533 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU.


    Original     		PDF MPC17533 MPC17533 16PIN OUT2B

    Untitled

    Abstract: No abstract text available
    Text: Systems in Silicon Contact Information: S-MOS Systems, Inc. 408-922-0200 or 800-228-9958 150 River Oaks Parkway San Jose, California 95134 Fax: 408 922-0238 E-mail: literature@smos.com URL: www.smos.com AMD Embedded Processor Division, FusionE86 Support


    Original     		PDF FusionE86

    TMS626162A

    Abstract: No abstract text available
    Text: TMS626162A 524ā288 BY 16ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS692B − JULY 1997 − REVISED MARCH 1998 D Organization D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)


    Original     		PDF TMS626162A 16BIT SMOS692B 100-MHz TMS626162A

    Untitled

    Abstract: No abstract text available
    Text: M Product Preview SMARTMOS MPC17529 R 2 Channel H-Bridge Driver IC MPC17529 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU. This IC can control 4 mode output function


    Original     		PDF MPC17529 MPC17529 20PIN

    SMOS44N80

    Abstract: PD100A
    Text: SMOS44N80 Power MOSFETs S S D Dimensions SOT-227 ISOTOP Dim. G G=Gate, D=Drain,S=Source Test Conditions Symbol Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09


    Original     		PDF SMOS44N80 OT-227 5ID25; 5ID25 300us, 00A/us; SMOS44N80 PD100A

    TMS626812

    Abstract: No abstract text available
    Text: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS687A –JULY 1996 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D D Organization . . . 1M x 8 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving


    Original     		PDF TMS626812 SMOS687A 83-MHz TMS626812

    TMS626812

    Abstract: No abstract text available
    Text: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)


    Original     		PDF TMS626812A SMOS691B 100-MHz TMS626812

    48N50

    Abstract: 44n50 SMOS44N50 SMOS48N50
    Text: SMOS44N50, SMOS48N50 Power MOSFETs S S D Dimensions SOT-227 ISOTOP Dim. G G=Gate, D=Drain,S=Source Test Conditions Symbol VDSS 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595


    Original     		PDF SMOS44N50, SMOS48N50 OT-227 5ID25; 5ID25 300us, 00A/us; 48N50 44n50 SMOS44N50 SMOS48N50

    SOT-227 Package

    Abstract: SOT-227 TO-247ad SMOS21N50 SMOS26N50 SMOS44N50 SMOS44N50D2 SMOS44N50D3 SMOS44N80 SMOS48N50
    Text: Power MOSFETs Electrical Characteristics Òype VDSS ID25 @TC=25°C RDS ON VGSS Ñircuit Package Style  A SMOS21N50 500 21.0 250 " 20 0.45 1 TO-247AD SMOS26N50 500 26.0 200 " 20 0.50 1 TO-247AD SMOS44N50 500 44.0 120 " 20 0.24 1 SOT-227 SMOS44N50D2 500 44.0


    Original     		PDF SMOS21N50 O-247AD SMOS26N50 SMOS44N50 OT-227 SMOS44N50D2 SMOS44N50D3 SOT-227 Package SOT-227 TO-247ad SMOS21N50 SMOS26N50 SMOS44N50 SMOS44N50D2 SMOS44N50D3 SMOS44N80 SMOS48N50

    SMOS182

    Abstract: No abstract text available
    Text: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1


    OCR Scan     		PDF TMS626802, TMS636802 1048576-WORD SMOS182 100-MHz S626802

    C2238

    Abstract: TMS626812
    Text: TM S626412A , TM S626812A 2 0 9 7 1 5 2 B Y 4 -B IT B Y 2 -B A N K , 1 0 4 8 5 7 6 B Y 8 -B IT B Y 2 -B A N K S Y N C H R O N O U S D Y N A M IC R A N D O M -A C C E S S M E M O R IE S _ SMOS691A-JULY 1997 - REVISED OCTOBER 1997 SYNCHRONOUS


    OCR Scan     		PDF S626412A S626812A SMOS691A-JULY 626x12A-10 626x12A-12 TheTMS626x12A 16777216-bit C2238 TMS626812

    TMS626812

    Abstract: No abstract text available
    Text: TMS626812 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY _ SMOS687A -JULY 1 9 9 6- REVISED APRIL 1997 • • • Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving


    OCR Scan     		PDF TMS626812 1048576-WORD SMOS687A 83-MHz

    Untitled

    Abstract: No abstract text available
    Text: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)


    OCR Scan     		PDF TMS664414, TMS664814, TMS664164 64M-BIT SMOS69Q

    MC141501P

    Abstract: voice recording chip VOICE RECording MC141501 3.58 Mhz Crystal
    Text: M M O T O R O L A MC141501P Product Preview Single Chip Voice Memory System Low power Silicon-Gate CMOS The voice memory system is a SMOS integrated circuit specially designed for voice recording/reproduction application. e.g. Telephone Answering Machine.


    OCR Scan     		PDF 256K/1M MC141501P SG407/D MC141501P voice recording chip VOICE RECording MC141501 3.58 Mhz Crystal

    2U97

    Abstract: No abstract text available
    Text: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642A- FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • TWo Banks for On-Chip Interleaving


    OCR Scan     		PDF TMS626402 2097152-WORD SMOS642A- 100-MHz 2U97

    TMS6264

    Abstract: TMS626812
    Text: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving


    OCR Scan     		PDF TMS626412A, TMS626812A SMOS691A 100-MHz R-PDSO-G44) TMS6264 TMS626812

    TMS6264

    Abstract: No abstract text available
    Text: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS842A - FEBRUARY 1994 - REVISED JUNE 1995 • Organization . . . 2M x 4 x 2 Banks DGE PACKAGE TOP VIEW • 3.3-V Power Supply (±10% Tolerance) • Two Banks fo r On-Chip Interleaving


    OCR Scan     		PDF TMS626402 2097152-WORD SMOS842A 100-MHz TMS6264

    texas instruments 77261

    Abstract: TEXAS 77261 N03J
    Text: TMS626802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS182A - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) High Bandwidth - Up to 100-MHz Data


    OCR Scan     		PDF TMS626802 1048576-WORD SMOS182A 100-MHz texas instruments 77261 TEXAS 77261 N03J

    Untitled

    Abstract: No abstract text available
    Text: TMS626162A 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS692B - JULY 1997 - REVISED MARCH 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±10% Tolerance DGEPACKAGE (T O P V IE W ) VCC £ 1 DQOt 2 DQ1 [ 3 VSSQ t 4


    OCR Scan     		PDF TMS626162A 16-BIT SMOS692B 100-MHz

    S626802-12

    Abstract: No abstract text available
    Text: T M S 6 2 6 1 62 5 2 4 2 8 8 - W O R D BY 1 6- B I T B Y 2 - B A N K SYNCHRO NO US DYNAMIC RA N D O M -A C C E S S MEMORY SMOS683D - FEBRUARY 1995 - REVISED JULY 1996 Or ga ni z a t i on . . . 512K x 1 6 x 2 B a n k s DGEPACKAGE TOP V IE W 3.3-V P o w e r S u p p l y (±10% Tol erance)


    OCR Scan     		PDF SMOS683D 83-MHz S626802-12

    Untitled

    Abstract: No abstract text available
    Text: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693 - OCTOBER 1997 TMS626412B DGEPACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses)


    OCR Scan     		PDF TMS626412B, TMS626812B SMOS693 100-MHz R-PDSO-G44)

    V210AB

    Abstract: V210B
    Text: V210B/V210AB HIGH VOLTAGE, PHOTO SMOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 350VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 3750VACrms


    OCR Scan     		PDF V210B/V210AB V210B 350VAC 130mA 00V/ms 3750VACrms V210AB V210AB V210B

    V214S

    Abstract: No abstract text available
    Text: V214S HIGH VOLTAGE, PHOTO SMOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 400VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 1500VACrms


    OCR Scan     		PDF V214S 400VAC 130mA 00V/ms 1500VACrms V214S