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    SMG3018

    Abstract: FET MARKING QG
    Text: SMG3018K 640mA, 30V,RDS ON 8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description SC-59 A The SMG3018K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG3018K is


    Original
    PDF SMG3018K 640mA, SC-59 SMG3018K 3018E 01-Jun-2002 SMG3018 FET MARKING QG