F-12030
Abstract: No abstract text available
Text: SM F-1 2 0 3 0 - ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r P O W G T O p t i ITI Ì Z G C l GaAs FET 2-10 GH z Description Features The SMF-12030-200 is a packaged version of the SMF12000-200. The chip is a 1200 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s power
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SMF-12030-200
SMF12000-200.
SMF-12000-200
F-12030
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SMF12000-200
Abstract: No abstract text available
Text: SMF-12020 ELECTRO NICS Sam sung M icrow ave Sem iconductor P O W G I* O p t i m i z e d GaAs FET 2-12 GHz Description Features The SMF-12020-200 is a packaged version of the SMF12000-200. The chip is a 1200 jam n-channel MESFET with 0.5 p.m gate length, utilizing Samsung Microwave’s power
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SMF-12020
SMF-12020-200
SMF12000-200.
SMF-12000-200
SMF12000-200
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f12000
Abstract: S 042 P "cross reference" SMF12000
Text: SM F-12000 Samsung M icrow ave Sem iconductor -100 •200 P O W O f O p tÌV H ÌZ G C Ì GaAs FET 2 -1 6 GHz Description Features The SMF-12000 is a 1200 |xm n-channel MESFET with 0.5 im gate length, utilizing Samsung Microwave’s power optimized P5 process. Ti/Pt/Au gate metallization and
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F-12000
SMF-12000
f12000
S 042 P "cross reference"
SMF12000
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