marking WB4
Abstract: NIPPON CHEMI nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
MRF377H
marking WB4
NIPPON CHEMI
nippon capacitors
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
A113
A114
A115
AN1955
C101
JESD22
MRF5S9070NR1
MRF5S9070NR
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845 motherboard circuit
Abstract: MRF377 0603HC-10NXJB Coilcraft Rogers 3006 MRF377R3 NIPPON CAPACITORS DVB-T acpr dvbt transmitter 3A412 MRF377R5
Text: MOTOROLA Order this document by MRF377/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF377 MRF377R3 MRF377R5 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377/D
MRF377
MRF377R3
MRF377R5
MRF377
MRF377R3
845 motherboard circuit
0603HC-10NXJB Coilcraft
Rogers 3006
NIPPON CAPACITORS
DVB-T acpr
dvbt transmitter
3A412
MRF377R5
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500w power amplifier circuit diagram
Abstract: 500w audio amplifier circuit diagram schematic diagram inverter 500w USING MOSFET 500w audio amplifier circuit diagram layout down Audio Power Amplifier MOSFET TOSHIBA schematic diagram PWM inverter 500w schematic PWM inverter 500w C18 ph zener 100w audio amplifier circuit diagram class D 350w power amplifier stereo
Text: REFERENCE DESIGN IRAUDAMP1 revB International Rectifier • 233 Kansas Street, El Segundo, CA 90245 z USA High Power Class D Audio Power Amplifier using IR2011S IRAUDAMP1 revB High Power Class D Audio Power Amplifier using IR2011S Features - Complete Analog Input Class D Audio Power Amplifier
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IR2011S
IR2011S,
470uF,
NPT0104
T106-2,
AWG18,
500w power amplifier circuit diagram
500w audio amplifier circuit diagram
schematic diagram inverter 500w USING MOSFET
500w audio amplifier circuit diagram layout down
Audio Power Amplifier MOSFET TOSHIBA
schematic diagram PWM inverter 500w
schematic PWM inverter 500w
C18 ph zener
100w audio amplifier circuit diagram class D
350w power amplifier stereo
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2DS1047
Abstract: nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
MRF377
2DS1047
nippon capacitors
Nippon chemi
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135L
MRF9135LR3
MRF9135LSR3
MRF9135L
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130H
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
MRF377
MRF377R3
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United Chemi-Con SME series
Abstract: UNITED CHEMI-CON SME SME CHEMI-CON SME series SME50VB1R0M5X11LL SME CAPACITOR United CHEMI-CON
Text: SME Series Ⅲ The SME series capacitors are our standard general purpose capacitors. These radial lead capacitors are available in a wide range of voltage and capacitance ratings and are designed for a load life of 2,000 hours at 85؇C with an operating temperature range of 40؇C to 85؇C.
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SME35VB33RM5X11
SME50VB101M8X11
at20C)
SME50VB102M16X25
SME100VB47RM10X16
United Chemi-Con SME series
UNITED CHEMI-CON SME
SME CHEMI-CON
SME series
SME50VB1R0M5X11LL
SME CAPACITOR
United CHEMI-CON
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SME Series
Abstract: United Chemi-Con SME series UNITED CHEMI-CON SME SME 63 VB 220 M sme50Vb33 chemicon sme SME50VB10RM5X11LL SME25VB102M12X20LL
Text: SME Series Ⅲ The SME series capacitors are our standard general purpose capacitors. These radial lead capacitors are available in a wide range of voltage and capacitance ratings and are designed for a load life of 2,000 hours at 85؇C with an operating temperature range of 40؇C to 85؇C.
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SME35VB33RM5X11
SME50VB101M8X11
at20C)
SME50VB102M16X25
SME100VB47RM10X16
SME Series
United Chemi-Con SME series
UNITED CHEMI-CON SME
SME 63 VB 220 M
sme50Vb33
chemicon sme
SME50VB10RM5X11LL
SME25VB102M12X20LL
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AN1955
Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this
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MRF5S9070NR1/D
MRF5S9070NR1
AN1955
MRF5S9070NR1
T491D106K035AS
272915l
crcw12065603f100
MRF5S9070NR
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MRF377HR3
Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377HR3
MRF377HR5
NIPPON CAPACITORS
DS1046
DVB-T acpr
845 motherboard circuit
Nippon chemi
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MRF377
Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
MRF377
MRF377R3
845 motherboard circuit
0805J
resistor kyocera
845 motherboard
dvbt
nippon capacitors
2508051107Y0
datasheet dvbt transmitter
Nippon chemi
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465B
Abstract: A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S19140H
MRF6S19140HR3
MRF6S19140HSR3
465B
A114
A115
AN1955
JESD22
MRF6S19140H
MRF6S19140HSR3
Nippon capacitors
Nippon chemi
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A114
Abstract: A115 AN1955 C101 JESD22 MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications
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MRF6S9130H
MRF6S9130HR3
MRF6S9130HSR3
MRF6S9130HR3
A114
A115
AN1955
C101
JESD22
MRF6S9130H
MRF6S9130HSR3
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transistor amplifier 1ghz 1400 watts
Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
transistor amplifier 1ghz 1400 watts
nippon capacitors
0603HC-10NXJB
Nippon chemi
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nippon capacitors
Abstract: dvbt transmitter j564 Nippon chemi
Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
nippon capacitors
dvbt transmitter
j564
Nippon chemi
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MRF9135LR3
Abstract: MARKING WB1 MRF9135L MRF9135LSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier
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MRF9135L
MRF9135LR3
MRF9135LSR3
MARKING WB1
MRF9135L
MRF9135LSR3
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MRF5S9070NR1
Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S9070MR1
MRF5S9070NR1.
MRF5S9070NR1
marking us capacitor pf l1
A113
A114
A115
AN1955
C101
JESD22
crcw12065603f100
MRF5S9070MR1
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ph c18 zener diode
Abstract: 500w audio amplifier circuit diagram ph c24 zener diode C18 ph zener zener diode c27 ph IRS20124 mosfet based power inverter project 500w power amplifier stereo IRS20124 AN 46F4081
Text: IRAUDAMP1 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 ! USA High Power Class D Audio Power Amplifier using IR2011S www.irf.com 1 IRAUDAMP1 High Power Class D Audio Power Amplifier using IR2011S Features - Complete Analog Input Class D Audio Power Amplifier
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IR2011S
IR2011S,
ph c18 zener diode
500w audio amplifier circuit diagram
ph c24 zener diode
C18 ph zener
zener diode c27 ph
IRS20124
mosfet based power inverter project
500w power amplifier stereo
IRS20124 AN
46F4081
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this
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MRF5S9070NR1/D
MRF5S9070NR1
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MRF5S9070N
Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070N
100B180JP500X
68 uf 400 volt ac capacitor
crcw12065603f100
865 marking amplifier
MRF5S9070NR
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845 motherboard circuit
Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
845 motherboard circuit
DS1046
NIPPON CAPACITORS
470-860 mhz Power amplifier w
470-860 mhz Power amplifier 5 w
Nippon chemi
845 motherboard
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