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    SMD-TRANSISTOR 132 Search Results

    SMD-TRANSISTOR 132 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SMD-TRANSISTOR 132 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


    Original     		PDF BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q

    CDFP4-F16

    Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
    Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH FN6475 ISL73127RH ISL73128RH ISL73096RH ISL73127RH CDFP4-F16 ISL73096RHVF "top mark" intersil 5962F0721801V9A NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor

    PBSS4160U

    Abstract: PBSS5160U
    Text: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 August 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5160U OT323 SC-70) PBSS4160U. PBSS4160U PBSS5160U

    transistor 103

    Abstract: TRANSISTOR SMD MARKING CODE QR s47 IC smd marking code PBSS4240X TRANSISTOR SMD CODE PACKAGE SOT89 4 marking HD SOT89
    Text: PBSS4240X 40 V, 2 A NPN low VCEsat BISS transistor 15 October 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement:


    Original     		PDF PBSS4240X PBSS5240X. transistor 103 TRANSISTOR SMD MARKING CODE QR s47 IC smd marking code PBSS4240X TRANSISTOR SMD CODE PACKAGE SOT89 4 marking HD SOT89

    TRANSISTOR SMD CODE PACKAGE SOT89 4

    Abstract: No abstract text available
    Text: PBSS5240X 40 V, 2 A PNP low VCEsat BISS transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:


    Original     		PDF PBSS5240X PBSS4240X. TRANSISTOR SMD CODE PACKAGE SOT89 4

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501

    PBHV8118T

    Abstract: No abstract text available
    Text: PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8118T O-236AB) AEC-Q101 PBHV8118T

    Untitled

    Abstract: No abstract text available
    Text: PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8118T O-236AB) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BCP54; BCX54; BC54PA 45 V, 1 A NPN medium power transistors Rev. 8 — 21 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP54; BCX54; BC54PA BCP54 OT223 SC-73 BCP51 BCX54 SC-62 O-243

    Untitled

    Abstract: No abstract text available
    Text: BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP69; BC869; BC69PA BCP69 OT223 SC-73 BCP68 BC869 SC-62 O-243

    Untitled

    Abstract: No abstract text available
    Text: BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 — 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP53; BCX53; BC53PA BCP53 OT223 SC-73 BCP56 BCX53 SC-62 O-243

    MOSFET TRANSISTOR SMD MARKING CODE bh

    Abstract: No abstract text available
    Text: BCP55; BCX55; BC55PA 60 V, 1 A NPN medium power transistors Rev. 8 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP55; BCX55; BC55PA BCP55 OT223 SC-73 BCP52 BCX55 SC-62 O-243 MOSFET TRANSISTOR SMD MARKING CODE bh

    BCP56

    Abstract: No abstract text available
    Text: BCP56; BCX56; BC56PA 80 V, 1 A NPN medium power transistors Rev. 9 — 25 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP56; BCX56; BC56PA BCP56 OT223 SC-73 BCP53 BCX56 SC-62 O-243 BCP56

    Untitled

    Abstract: No abstract text available
    Text: BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 — 18 October 2011 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP68; BC868; BC68PA BCP68 OT223 SC-73 BCP69 BC868 SC-62 O-243

    Untitled

    Abstract: No abstract text available
    Text: BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP69; BC869; BC69PA BCP69 BC869 SC-73 SC-62 O-243 BCP68

    SMD marking bcx51

    Abstract: No abstract text available
    Text: BCP51; BCX51; BC51PA 45 V, 1 A PNP medium power transistors Rev. 9 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP51; BCX51; BC51PA BCP51 BCX51 SC-73 SC-62 O-243 BCP54 SMD marking bcx51

    BCP64

    Abstract: No abstract text available
    Text: BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 — 19 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP53; BCX53; BC53PA BCP53 BCX53 SC-73 SC-62 O-243 BCP56 BCP64

    Untitled

    Abstract: No abstract text available
    Text: BCP51; BCX51; BC51PA 45 V, 1 A PNP medium power transistors Rev. 9 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP51; BCX51; BC51PA BCP51 OT223 SC-73 BCP54 BCX51 SC-62 O-243

    NXP SOT1061 Transistors

    Abstract: No abstract text available
    Text: BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors Rev. 9 — 18 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device SMD plastic packages. Table 1. Product overview


    Original     		PDF BCP52; BCX52; BC52PA BCP52 OT223 SC-73 BCP55 BCX52 SC-62 O-243 NXP SOT1061 Transistors

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		PDF SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264

    2N0605

    Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
    Text: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55


    Original     		PDF SPI80N06S2-05 SPP80N06S2-05 SPB80N06S2-05 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N06S2-05 Q67040-S4245 2N0605 2N0605 SPI80N06S2-05 SPB80N06S2-05 2N060

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A