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    SMD TRANSISTOR S2P Search Results

    SMD TRANSISTOR S2P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD TRANSISTOR S2P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Nordmende

    Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
    Text: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
    Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright


    Original     		PDF

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor
    Text: 4th edition RF Manual, appendix Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4th edition March 2004 APPENDIX / documentation/rf_manual Document number: 4322 252 06388


    Original     		BF1107/8 BGA2715-17 BGA6589 MOSFET TRANSISTOR SMD MARKING CODE nh ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor PDF

    CGH55015F2

    Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 CGH5501 smd transistor s2p CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F PDF

    STS5P30L

    Abstract: smd diode S4 6A d0144 smd transistor s2p SO-16-narrow smd diode c411 77121A7 smd c411 diode STPS3L25U 77121-A7
    Text: L6910 L6910A ADJUSTABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION FEATURE • OPERATING SUPPLY VOLTAGE FROM 5V TO 12V BUSES ■ UP TO 1.3A GATE CURRENT CAPABILITY ■ ADJUSTABLE OUTPUT VOLTAGE ■ N-INVERTING E/A INPUT AVAILABLE ■ 0.9V ±1.5% VOLTAGE REFERENCE


    Original     		L6910 L6910A 200kHz 50kHz SO-16 HTSSOP16 HTSSOP16 STS5P30L smd diode S4 6A d0144 smd transistor s2p SO-16-narrow smd diode c411 77121A7 smd c411 diode STPS3L25U 77121-A7 PDF

    SO-16-narrow

    Abstract: elektronik DDR smd transistor s2p STS5P30L smd diode S4 6A 6TPB330M D0144 smd diode c411 NEOHM D03IN1510
    Text: L6910G ADJUSTABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 ■ ■ ■ ■ 3 Figure 1. Packages FEATURES OPERATING SUPPLY VOLTAGE FROM 5V TO 12V BUSES UP TO 1.3A GATE CURRENT CAPABILITY


    Original     		L6910G 200kHz 50kHz SO-16 SO-16-narrow elektronik DDR smd transistor s2p STS5P30L smd diode S4 6A 6TPB330M D0144 smd diode c411 NEOHM D03IN1510 PDF

    STS5P30L

    Abstract: No abstract text available
    Text: L6910G ADJUSTABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 ■ ■ ■ ■ 3 Figure 1. Packages FEATURES OPERATING SUPPLY VOLTAGE FROM 5V TO 12V BUSES UP TO 1.3A GATE CURRENT CAPABILITY


    Original     		L6910G 200kHz 50kHz SO-16 STS5P30L PDF

    CGH55015F2

    Abstract: transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015-TB PDF

    10UF

    Abstract: CGH4009 CGH40090PP CGH40090PP-TB JESD22 smd transistor s2p
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 10UF CGH4009 CGH40090PP-TB JESD22 smd transistor s2p PDF

    cgh40090

    Abstract: CGH40090PP-TB
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 cgh40090 CGH40090PP-TB PDF

    CGH35060

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060 PDF

    CGH40090PP

    Abstract: 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd PDF

    CGH40090PP

    Abstract: CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p PDF

    TRANSISTOR SMD 9014

    Abstract: 9014 SMD CGH40090PP CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 TRANSISTOR SMD 9014 9014 SMD CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B PDF

    elektronik DDR

    Abstract: L6910 SO-16-narrow
    Text: L6910 L6910A ADJUSTABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 ■ ■ ■ ■ 3 Figure 1. Packages FEATURES OPERATING SUPPLY VOLTAGE FROM 5V TO 12V BUSES UP TO 1.3A GATE CURRENT CAPABILITY


    Original     		L6910 L6910A 200kHz 50kHz SO-16 HTSSOP16 L6910TR elektronik DDR SO-16-narrow PDF

    Untitled

    Abstract: No abstract text available
    Text: L6910 L6910A ADJUSTABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 ■ ■ ■ ■ 3 Figure 1. Packages FEATURES OPERATING SUPPLY VOLTAGE FROM 5V TO 12V BUSES UP TO 1.3A GATE CURRENT CAPABILITY


    Original     		L6910 L6910A 200kHz 50kHz SO-16 HTSSOP16 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 PDF

    2.45 Ghz power amplifier 45 dbm

    Abstract: No abstract text available
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 2.45 Ghz power amplifier 45 dbm PDF

    TRANSISTOR SMD 9014

    Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


    Original     		CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 TRANSISTOR SMD 9014 CGH40010F transistor 9014 smd 9014 transistor smd CGH5501 CGH55015 CGH55015F CGH55015-TB PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 12ect PDF

    CGH40090PP-TB

    Abstract: DSA001537 CGH40090PP
    Text: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		CGH40090PP CGH40090PP CGH40090PP, CGH4009 CGH40090PP-TB DSA001537 PDF

    smd diode c411

    Abstract: elektronik DDR smd transistor S5 SMD7343 ddr elektronik SO16N D0144 TO50 transistor kemet ceramic esr 1nF STS5P30L
    Text: L6910 L6910A ADJUSTABLE STEP DOWN CONTROLLER WITH SYNCHRONOUS RECTIFICATION 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 ■ ■ ■ ■ 3 Figure 1. Packages FEATURES OPERATING SUPPLY VOLTAGE FROM 5V TO 12V BUSES UP TO 1.3A GATE CURRENT CAPABILITY


    Original     		L6910 L6910A 200kHz 50kHz SO-16 HTSSOP16 L6910TR smd diode c411 elektronik DDR smd transistor S5 SMD7343 ddr elektronik SO16N D0144 TO50 transistor kemet ceramic esr 1nF STS5P30L PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 PDF