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    CGH35 Price and Stock

    Essentra Components RCGH-35

    RACK CARD GUIDE "H"TYPE 3.5"
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    DigiKey RCGH-35 Bulk 2,836 1
    • 1 $1.08
    • 10 $0.823
    • 100 $0.6312
    • 1000 $0.49102
    • 10000 $0.44667
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    RS RCGH-35 Bulk 4 Weeks 500
    • 1 -
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    • 1000 $0.535
    • 10000 $0.455
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    Bisco Industries RCGH-35 504
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    DB Roberts RCGH-35
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    MACOM CGH35015F

    RF MOSFET HEMT 28V 440196
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH35015F Tray 31 1
    • 1 $94.95
    • 10 $90.047
    • 100 $90.047
    • 1000 $90.047
    • 10000 $90.047
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    MACOM CGH35060F2

    RF MOSFET HEMT 28V 440193
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    DigiKey CGH35060F2 Tray 21 1
    • 1 $291.33
    • 10 $255.1
    • 100 $255.1
    • 1000 $255.1
    • 10000 $255.1
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    MACOM CGH35240F

    RF MOSFET HEMT 28V 440201
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH35240F Tray 18 1
    • 1 $444.94
    • 10 $444.94
    • 100 $444.94
    • 1000 $444.94
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    Mouser Electronics CGH35240F 30
    • 1 $685.99
    • 10 $685.99
    • 100 $685.99
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    Richardson RFPD CGH35240F 10
    • 1 -
    • 10 $685.97
    • 100 $685.97
    • 1000 $685.97
    • 10000 $685.97
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    MACOM CGH35030F

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH35030F Tray 15 1
    • 1 $119.42
    • 10 $113.771
    • 100 $113.771
    • 1000 $113.771
    • 10000 $113.771
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    CGH35 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH35015F Cree 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Original PDF
    CGH35030F Cree 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Original PDF
    CGH35060F2 Wolfspeed 60W GAN HEMT 28V 4.0GHZ FLANGE Original PDF
    CGH35060F2 Wolfspeed 60W GAN HEMT 28V 4.0GHZ FLANGE Original PDF
    CGH351T500V2C Cornell Dubilier Aluminum Capacitors, Capacitors, CAP ALUM 350UF 500V SCREW Original PDF
    CGH351T500V2C Mallory Capacitor Type CGH - Computer Grade Capacitors Original PDF
    CGH35240F Wolfspeed 240W GAN HEMT 28V 3.1-3.5GHZ FET Original PDF
    CGH35240F Wolfspeed 240W GAN HEMT 28V 3.1-3.5GHZ FET Original PDF

    CGH35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    Untitled

    Abstract: No abstract text available
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    Tantalum

    Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 Tantalum CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060-TB s-parameter

    A 12-15 GHz High Gain Amplifier

    Abstract: HEADER RT
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT

    CGH35060

    Abstract: CGH35060F
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 10failure CGH35060

    10UF

    Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238

    transistor 8772

    Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 transistor 8772 8772 transistor 470PF CGH35030-TB JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28 V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015S

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015S

    transistor 8772

    Abstract: Transistor C 4927 8772 transistor CGH35030F
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor

    transistor E 13007

    Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251
    Text: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		PDF CGH35015S CGH35015S CGH3501 transistor E 13007 54-619 msl 9351 s-parameters cree marking information 00457 43251

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    CGH35060

    Abstract: CGH35060F 470PF CGH3506 CGH35060F-TB CGH35060-TB JESD22
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 CGH35060 470PF CGH3506 CGH35060F-TB CGH35060-TB JESD22

    transistor smd f36

    Abstract: CGH35015 CGH35015F 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015F CGH35015F CGH3501 transistor smd f36 CGH35015 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw

    Untitled

    Abstract: No abstract text available
    Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		PDF CGH35240F 50-ohm CGH35240F CGH3524

    RO4350B

    Abstract: CGH35030F CGH35030-TB 10UF 470PF
    Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503 RO4350B CGH35030-TB 10UF 470PF

    CGH35015

    Abstract: CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401

    CGH35240F

    Abstract: power transistor gan s-band CGH35240F-TB cgh35240 A114D CGH3524 CGH35240-TB JESD22
    Text: ADVANCED INFORMATION CGH35240F 240 W, 2900-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth


    Original     		PDF CGH35240F 50-ohm CGH35240F CGH3524 power transistor gan s-band CGH35240F-TB cgh35240 A114D CGH3524 CGH35240-TB JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal


    Original     		PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1

    cgh35240

    Abstract: hemt .s2p HEADER RT
    Text: CGH35240F 240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH35240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar


    Original     		PDF CGH35240F 50-ohm CGH35240F CGH3524 CGH35240F-TB cgh35240 hemt .s2p HEADER RT