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    SMD TRANSISTOR REC MARKING Search Results

    SMD TRANSISTOR REC MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR REC MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    057N06N

    Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
    Text: Type IPB054N06N3 G IPP057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB054N06N3 IPP057N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358 PDF

    052N06L

    Abstract: IEC61249-2-21 IPP052N06L3 JESD22 PG-TO220-3 gs 05 24 gd 2
    Text: Type IPB049N06L3 G IPP052N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L IEC61249-2-21 JESD22 PG-TO220-3 gs 05 24 gd 2 PDF

    084N06L

    Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
    Text: Type IPB081N06L3 G IPP084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L PDF

    084N06L

    Abstract: 081N06L
    Text: Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 IPI084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 084N06L 081N06L PDF

    084N06L

    Abstract: smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPB081N06L3 IPP084 D50A5
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPP084 D50A5 PDF

    067N08N

    Abstract: 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP070N08N3 IPI070N08N3 IPB067N08N3 PG-TO220-3 PG-TO262-3 PG-TO263-3 070N08N 067N08N 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40 PDF

    057N06N

    Abstract: 054N06N JESD22 PG-TO220-3
    Text: IPB054N06N3 G IPP057N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB054N06N3 IPP057N06N3 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N JESD22 PG-TO220-3 PDF

    084N06L

    Abstract: 081N06L
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB081N06L3 IPP084N06L3 PG-TO263-3 081N06L PG-TO220-3 084N06L 084N06L 081N06L PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.9 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L PDF

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Text: Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB021N06N3 IPI024N06N3 IPP024N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 024N06N 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G PDF

    052N06L

    Abstract: IPP052N06L3 JESD22 PG-TO220-3 58ua
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L JESD22 PG-TO220-3 58ua PDF

    100n08n

    Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP100N08N3 IPI100N08N3 IPB097N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 100n08n IEC61249-2-21 PG-TO220-3 PDF

    067N08N

    Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPP070N08N3 IPI070N08N3 IPB067N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 067N08N 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21 PDF

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Text: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB029N06N3 IPI032N06N3 IPP032N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 032N06n 029N06N IPI032N06N3 G IEC61249-2-21 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06 PDF

    037N06L

    Abstract: 034N06L IPI037N06L3 IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G
    Text: Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 3.4 mΩ • Optimized technology for DC/DC converters ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L IEC61249-2-21 037N06L 034N06L IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G PDF

    024N06N

    Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
    Text: IPB021N06N3 G Type IPI024N06N3 G IPP024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB021N06N3 IPI024N06N3 IPP024N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 021N06N 024N06N 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G PDF

    037N06L

    Abstract: 034N06L IPI037N06L3 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3
    Text: IPB034N06L3 G Type IPI037N06L3 G IPP037N06L3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 3.4 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L PG-TO-263-3 037N06L 034N06L 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3 PDF

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Text: IPB029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		IPB029N06N3 IPI032N06N3 IPP032N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 029N06N 032N06n 029N06N 032N06 032N0 IPI032N06N3 G JESD22 PG-TO220-3 PDF

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S O-220 transistor SMD MARKING CODE HF smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor PDF

    HFA06TB120S

    Abstract: IRFP250
    Text: HFA06TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • • Base cathode + 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free


    Original     		HFA06TB120SPbF HFA06TB120S 18-Jul-08 IRFP250 PDF

    transistor SMD MARKING CODE HF

    Abstract: HFA06TB120S IRFP250 smd code HF transistor
    Text: HFA06TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • Base cathode + 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level


    Original     		HFA06TB120S HFA06TB120S 18-Jul-08 transistor SMD MARKING CODE HF IRFP250 smd code HF transistor PDF

    transistor SMD MARKING CODE HF

    Abstract: smd transistor REC marking smd code HF transistor smd dt2 TRANSISTOR SMD MARKING CODE WT marking code dt2 transistor
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S 12-Mar-07 transistor SMD MARKING CODE HF smd transistor REC marking smd code HF transistor smd dt2 TRANSISTOR SMD MARKING CODE WT marking code dt2 transistor PDF

    smd TRANSISTOR code marking 2F

    Abstract: TRANSISTOR SMD 2x t SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 2x N TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE DM HFA15TB60S IRFP250
    Text: PD -20615 01/99 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits K VR = 600V BASE + 2 V F = 1.7V


    Original     		HFA15TB60S HFA15TB60S smd TRANSISTOR code marking 2F TRANSISTOR SMD 2x t SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 2x N TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE DM IRFP250 PDF

    smd transistor REC marking

    Abstract: transistor smd marking hf TB60S HFA04TB60S IRFP250 transistor smd marking HF vishay SMD REC MARKING 94036
    Text: HFA04TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Base common cathode + 2 Available RoHS* COMPLIANT BENEFITS • • • • • 3 - Anode 1 Anode - Ultrafast recovery Ultrasoft recovery


    Original     		HFA04TB60SPbF HFA04TB60S 18-Jul-08 smd transistor REC marking transistor smd marking hf TB60S IRFP250 transistor smd marking HF vishay SMD REC MARKING 94036 PDF