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    SMD TRANSISTOR REC MARKING Search Results

    SMD TRANSISTOR REC MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR REC MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    057N06N

    Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
    Text: Type IPB054N06N3 G IPP057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB054N06N3 IPP057N06N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358

    052N06L

    Abstract: IEC61249-2-21 IPP052N06L3 JESD22 PG-TO220-3 gs 05 24 gd 2
    Text: Type IPB049N06L3 G IPP052N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB049N06L3 IPP052N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L IEC61249-2-21 JESD22 PG-TO220-3 gs 05 24 gd 2

    084N06L

    Abstract: IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L
    Text: Type IPB081N06L3 G IPP084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB081N06L3 IPP084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L IPP084N06L3G IEC61249-2-21 JESD22 PG-TO220-3 081N06L

    084N06L

    Abstract: 081N06L
    Text: Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 60 V RDS on ,max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB081N06L3 IPP084N06L3 IPI084N06L3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 084N06L 081N06L

    084N06L

    Abstract: smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPB081N06L3 IPP084 D50A5
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB081N06L3 IPP084N06L3 PG-TO263-3 PG-TO220-3 081N06L 084N06L 084N06L smd marking D50 081N06L JESD22 PG-TO220-3 ipp084n06 marking D50 IPP084 D50A5

    067N08N

    Abstract: 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP070N08N3 IPI070N08N3 IPB067N08N3 PG-TO220-3 PG-TO262-3 PG-TO263-3 070N08N 067N08N 070N08N SMD MARKING d36 JESD22 PG-TO220-3 DD40

    057N06N

    Abstract: 054N06N JESD22 PG-TO220-3
    Text: IPB054N06N3 G IPP057N06N3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB054N06N3 IPP057N06N3 PG-TO263-3 PG-TO220-3 054N06N 057N06N 057N06N 054N06N JESD22 PG-TO220-3

    084N06L

    Abstract: 081N06L
    Text: IPB081N06L3 G IPP084N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 8.1 mΩ ID 50 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB081N06L3 IPP084N06L3 PG-TO263-3 081N06L PG-TO220-3 084N06L 084N06L 081N06L

    Untitled

    Abstract: No abstract text available
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.9 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Text: Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB021N06N3 IPI024N06N3 IPP024N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 024N06N 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G

    052N06L

    Abstract: IPP052N06L3 JESD22 PG-TO220-3 58ua
    Text: IPB049N06L3 G IPP052N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB049N06L3 IPP052N06L3 PG-TO263-3 PG-TO220-3 049N06L 052N06L 052N06L JESD22 PG-TO220-3 58ua

    100n08n

    Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 100n08n IEC61249-2-21 PG-TO220-3

    067N08N

    Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPP070N08N3 IPI070N08N3 IPB067N08N3 IEC61249-2-21 PG-TO220-3 PG-TO262-3 PG-TO263-3 067N08N 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Text: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 032N06n 029N06N IPI032N06N3 G IEC61249-2-21 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06

    037N06L

    Abstract: 034N06L IPI037N06L3 IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G
    Text: Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 3.4 mΩ • Optimized technology for DC/DC converters ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L IEC61249-2-21 037N06L 034N06L IEC61249-2-21 PG-TO-220-3 IPP037N06L3 G

    024N06N

    Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
    Text: IPB021N06N3 G Type IPI024N06N3 G IPP024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB021N06N3 IPI024N06N3 IPP024N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 021N06N 024N06N 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G

    037N06L

    Abstract: 034N06L IPI037N06L3 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3
    Text: IPB034N06L3 G Type IPI037N06L3 G IPP037N06L3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 3.4 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB034N06L3 IPI037N06L3 IPP037N06L3 IPP04xN06L IPI04xN06L IPB04xN06L PG-TO-263-3 037N06L 034N06L 034N06 13000 transistor TO-220 me 13000 transistor TO-220 JESD22 PG-TO-220-3

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Text: IPB029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 029N06N 032N06n 029N06N 032N06 032N0 IPI032N06N3 G JESD22 PG-TO220-3

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PDF PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S O-220 transistor SMD MARKING CODE HF smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor

    HFA06TB120S

    Abstract: IRFP250
    Text: HFA06TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • • Base cathode + 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free


    Original     		PDF HFA06TB120SPbF HFA06TB120S 18-Jul-08 IRFP250

    transistor SMD MARKING CODE HF

    Abstract: HFA06TB120S IRFP250 smd code HF transistor
    Text: HFA06TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 6 A FEATURES • • • • • • Base cathode + 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level


    Original     		PDF HFA06TB120S HFA06TB120S 18-Jul-08 transistor SMD MARKING CODE HF IRFP250 smd code HF transistor

    transistor SMD MARKING CODE HF

    Abstract: smd transistor REC marking smd code HF transistor smd dt2 TRANSISTOR SMD MARKING CODE WT marking code dt2 transistor
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PDF PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S 12-Mar-07 transistor SMD MARKING CODE HF smd transistor REC marking smd code HF transistor smd dt2 TRANSISTOR SMD MARKING CODE WT marking code dt2 transistor

    smd TRANSISTOR code marking 2F

    Abstract: TRANSISTOR SMD 2x t SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 2x N TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE DM HFA15TB60S IRFP250
    Text: PD -20615 01/99 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits K VR = 600V BASE + 2 V F = 1.7V


    Original     		PDF HFA15TB60S HFA15TB60S smd TRANSISTOR code marking 2F TRANSISTOR SMD 2x t SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE 2x N TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE DM IRFP250

    smd transistor REC marking

    Abstract: transistor smd marking hf TB60S HFA04TB60S IRFP250 transistor smd marking HF vishay SMD REC MARKING 94036
    Text: HFA04TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 4 A FEATURES • • • • • • • Base common cathode + 2 Available RoHS* COMPLIANT BENEFITS • • • • • 3 - Anode 1 Anode - Ultrafast recovery Ultrasoft recovery


    Original     		PDF HFA04TB60SPbF HFA04TB60S 18-Jul-08 smd transistor REC marking transistor smd marking hf TB60S IRFP250 transistor smd marking HF vishay SMD REC MARKING 94036