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    029N06N Search Results

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    029N06N Price and Stock

    Infineon Technologies AG IPB029N06N3GATMA1

    MOSFET N-CH 60V 120A D2PAK
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    DigiKey IPB029N06N3GATMA1 Digi-Reel 25,579 1
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    IPB029N06N3GATMA1 Cut Tape 25,579 1
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    IPB029N06N3GATMA1 Reel 25,000 1,000
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    Avnet Americas IPB029N06N3GATMA1 Reel 14 Weeks 1,000
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    Mouser Electronics IPB029N06N3GATMA1 1,916
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    Newark IPB029N06N3GATMA1 Cut Tape 62 1
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    TME IPB029N06N3GATMA1 1
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    Chip1Stop IPB029N06N3GATMA1 Cut Tape 1,996
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    Infineon Technologies AG IPB029N06NF2SATMA1

    TRENCH 40<-<100V
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    DigiKey IPB029N06NF2SATMA1 Cut Tape 1,613 1
    • 1 $2.09
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    IPB029N06NF2SATMA1 Digi-Reel 1,613 1
    • 1 $2.09
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    IPB029N06NF2SATMA1 Reel 1,600 800
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    Avnet Americas IPB029N06NF2SATMA1 Reel 800 12 Weeks 1
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    Mouser Electronics IPB029N06NF2SATMA1 855
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    Newark IPB029N06NF2SATMA1 Cut Tape 1,095 1
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    Chip1Stop IPB029N06NF2SATMA1 480
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    New Advantage Corporation IPB029N06NF2SATMA1 1,600 1
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    Infineon Technologies AG IPA029N06NXKSA1

    MOSFET N-CH 60V 84A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPA029N06NXKSA1 Tube 566 1
    • 1 $3.41
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    Avnet Americas IPA029N06NXKSA1 Tube 4 Weeks 216
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    Mouser Electronics IPA029N06NXKSA1 584
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    Newark IPA029N06NXKSA1 Bulk 855 1
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    Rochester Electronics IPA029N06NXKSA1 225 1
    • 1 $1.69
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    TME IPA029N06NXKSA1 1
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    Chip1Stop IPA029N06NXKSA1 Tube 1,928
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    EBV Elektronik IPA029N06NXKSA1 4,500 21 Weeks 500
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    New Advantage Corporation IPA029N06NXKSA1 3,000 1
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    Infineon Technologies AG IPP029N06NXKSA1

    TRENCH 40<-<100V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP029N06NXKSA1 Tube 500 1
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    Mouser Electronics IPP029N06NXKSA1
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    Newark IPP029N06NXKSA1 Bulk 1,000 1
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    Infineon Technologies AG IPA029N06NM5SXKSA1

    MOSFET N-CH 60V 87A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPA029N06NM5SXKSA1 Tube 269 1
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    Mouser Electronics IPA029N06NM5SXKSA1 1,092
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    Newark IPA029N06NM5SXKSA1 Bulk 1
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    Rochester Electronics IPA029N06NM5SXKSA1 1
    • 1 $1.19
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    TME IPA029N06NM5SXKSA1 1
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    Chip1Stop IPA029N06NM5SXKSA1 Tube 818
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    IPA029N06NM5SXKSA1 1
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    EBV Elektronik IPA029N06NM5SXKSA1 19 Weeks 500
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    Find more 029N06N price and stock on Findchips.com

    029N06N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPI029N06

    Abstract: 029N06N
    Text: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		PDF IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N 50K/W IPI029N06 029N06N

    032N06n

    Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
    Text: Type 029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 032N06n 029N06N IPI032N06N3 G IEC61249-2-21 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06

    032N06n

    Abstract: 029N06N 032N06 032N0 IPP032N06N3 IPI032N06N3 G JESD22 PG-TO220-3
    Text: 029N06N3 G Type IPI032N06N3 G IPP032N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.9 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB029N06N3 IPI032N06N3 IPP032N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 029N06N 032N06n 029N06N 032N06 032N0 IPI032N06N3 G JESD22 PG-TO220-3

    IPP029N06N

    Abstract: 029n06n
    Text: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N 50K/W IPP029N06N 029n06n

    Untitled

    Abstract: No abstract text available
    Text: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original     		PDF IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N

    IPP029N06N

    Abstract: No abstract text available
    Text: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N 50K/W IPP029N06N

    Untitled

    Abstract: No abstract text available
    Text: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel • Qualified according to JEDEC for target applications


    Original     		PDF IPP029N06N IEC61249-2-21 PG-TO220-3 029N06N

    Untitled

    Abstract: No abstract text available
    Text: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel • Qualified according to JEDEC for target applications


    Original     		PDF IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N

    029N06N

    Abstract: ipi029n
    Text: Type 029N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original     		PDF IPI029N06N IEC61249-2-21 PG-TO262-3 029N06N 50K/W 029N06N ipi029n

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V 029N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V 029N06N 1Description TO-220-FP Features • .


    Original     		PDF IPA029N06N O-220-FP IEC61249-2-21