SMD transistor code NC
Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
Text: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance
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2N7002
OT-23,
OT-23
MIL-STD-202G,
SMD transistor code NC
DIODE smd marking CODE WA
TRANSISTOR SMD MARKING CODE
transistor SMD MARKING CODE nx
smd marking NX
transistor smd code marking nc
2n7002 smd
SMD Transistor nc
TRANSISTOR SMD MARKING CODE PD
smd diode 2n7002 marking code
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68NC
Abstract: 2SK3573 transistor 42A
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3573 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 68nC TYP. VDD = 16 V, VGS = 10 V, ID = 83 A Built-in gate protection diode
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2SK3573
O-263
68NC
2SK3573
transistor 42A
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2 input and gate 24v
Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode
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2SK3575
O-263
2 input and gate 24v
gate drive protection
smd transistor 26
2SK3575
2SK35
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BSO200P03S
Abstract: 1A smd mosfet TRANSISTOR SMD 1a 9 diode 91A IC MOSFET QG MOSFET KV MOSFET Rise Time 1 ns smd transistor dp smd diode dp smd rgs
Text: MOSFET IC SMD Type MOS Small Signal Transistor KSO200P03S BSO200P03S Features P-Channel Enhancement mode Logic level Avalanche rated dv /dt rated Ideal for fast switching buck converter Absolute Maximum Ratings Ta = 25 Parameter Continuous drain current Symbol
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KSO200P03S
BSO200P03S)
BSO200P03S
1A smd mosfet
TRANSISTOR SMD 1a 9
diode 91A
IC MOSFET QG
MOSFET KV
MOSFET Rise Time 1 ns
smd transistor dp
smd diode dp
smd rgs
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2SK3570
Abstract: 930 diode smd
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. VDD = 16 V, VGS = 10 V, ID = 48 A Built-in gate protection diode
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2SK3570
O-263
2SK3570
930 diode smd
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2SK3572
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3572 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 32 nC TYP. VDD = 16 V, VGS = 10 V, ID = 80 A Built-in gate protection diode +0.2
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2SK3572
O-263
2SK3572
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2SK3467
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode
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2SK3467
O-263
2SK3467
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SMD 20A
Abstract: 2SK3404
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode
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2SK3404
O-263
SMD 20A
2SK3404
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smd transistor QG
Abstract: smd transistor 26 2SK3713
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3713 +0.1 1.27-0.1 TO-263 Features Super high VGS off : VGS(off) = 3.8 to 5.8 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low QG: QG = 25 nC TYP. 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low Crss: Crss = 6.5 pF TYP. 0.1max
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2SK3713
O-263
smd transistor QG
smd transistor 26
2SK3713
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2SK3574
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. VDD = 24 V, VGS = 10 V, ID = 48 A Built-in gate protection diode
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2SK3574
O-263
2SK3574
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marking code 1s
Abstract: No abstract text available
Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB33XP
DFN2020MD-6
OT1220)
marking code 1s
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TRANSISTOR SMD MARKING CODE QR
Abstract: 2PMV65XP
Text: PMV65XP 20 V, single P-channel Trench MOSFET 21 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
TRANSISTOR SMD MARKING CODE QR
2PMV65XP
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Untitled
Abstract: No abstract text available
Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV65XPE
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV45EN2
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 March 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV250EPEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV250EPEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ290UNE
DFN1006-3
OT883)
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ950UPE 20 V, P-channel Trench MOSFET 10 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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PMZ950UPE
DFN1006-3
OT883)
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marking code 1f
Abstract: NXP SMD mosfet MARKING CODE
Text: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB12UN
DFN2020MD-6
OT1220)
marking code 1f
NXP SMD mosfet MARKING CODE
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NX3020NAK
Abstract: No abstract text available
Text: NX3020NAK 30 V, single N-channel Trench MOSFET 2 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAK
O-236AB)
NX3020NAK
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TRANSISTOR SMD MARKING CODE 1P
Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
Text: PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB33XN
DFN2020MD-6
OT1220)
TRANSISTOR SMD MARKING CODE 1P
smd transistor marking 1p
smd TRANSISTOR code marking 1P
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Untitled
Abstract: No abstract text available
Text: PMT760EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMT760EN
OT223
SC-73)
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
Text: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB20UN
DFN2020MD-6
OT1220)
MOSFET TRANSISTOR SMD MARKING CODE A1
MOSFET TRANSISTOR SMD MARKING CODE 11
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