Untitled
Abstract: No abstract text available
Text: MCT5211 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, with Base Connection FEATURES • Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA A 1 6 B C 2 5 C • High isolation voltage, 5300 VRMS 4 E • Compliant to RoHS Directive 2002/95/EC and in
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MCT5211
i179004-7
MCT5211,
2002/95/EC
2002/96/EC
UL1577,
E52744
i179004-3
MCT5211
11-Mar-11
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: No abstract text available
Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV160UP
O-236AB)
MOSFET TRANSISTOR SMD MARKING CODE nh
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Untitled
Abstract: No abstract text available
Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS5612PA
OT1061
PBSS4612PA.
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Untitled
Abstract: No abstract text available
Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4612PA
OT1061
PBSS5612PA.
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smd transistor marking A6
Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4620PA
OT1061
PBSS5620PA.
smd transistor marking A6
TRANSISTOR SMD MARKING CODE a6
NXP SMD TRANSISTOR MARKING CODE
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smd code A9 3 pin transistor
Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
Text: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS5612PA
OT1061
PBSS4612PA.
smd code A9 3 pin transistor
smd transistor a9
NXP SMD TRANSISTOR MARKING CODE
PBSS5612PA
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Untitled
Abstract: No abstract text available
Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4620PA
OT1061
PBSS5620PA.
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smd transistor marking A5
Abstract: TRANSISTOR REPLACEMENT table for transistor PBSS4612PA
Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
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PBSS4612PA
OT1061
PBSS5612PA.
smd transistor marking A5
TRANSISTOR REPLACEMENT table for transistor
PBSS4612PA
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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OCR Scan
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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SMD transistor Marking 1x
Abstract: No abstract text available
Text: PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB8032XP
DFN2020-6
OT1118)
SMD transistor Marking 1x
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TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
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SMD TRANSISTOR MARKING 5H
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 PBSS301NX PBSS301PX 6 pin TRANSISTOR SMD CODE 5H
Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 01 — 21 August 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
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PBSS301PX
SC-62/TO-243)
PBSS301NX.
PBSS301PX
SMD TRANSISTOR MARKING 5H
TRANSISTOR SMD CODE PACKAGE SOT89
PBSS301NX
6 pin TRANSISTOR SMD CODE 5H
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PBSS301NZ
Abstract: PBSS301PZ SC-73 TRANSISTOR SMD MARKING CODE 57
Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
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PBSS301PZ
OT223
SC-73)
PBSS301NZ.
PBSS301PZ
PBSS301NZ
SC-73
TRANSISTOR SMD MARKING CODE 57
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PBSS301NZ
Abstract: PBSS301PZ SC-73
Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat BISS transistor Rev. 01 — 7 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
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PBSS301PZ
OT223
SC-73)
PBSS301NZ.
PBSS301PZ
PBSS301NZ
SC-73
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smd TRANSISTOR code marking 2F
Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD 9bb smd transistor 2f transistor D207 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 2F transistor smd code marking tm
Text: Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits
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PD-20603
HFA08TB120S
140nC
HFA08TB120S
smd TRANSISTOR code marking 2F
SMD TRANSISTOR MARKING 9bb
TRANSISTOR SMD MARKING CODE kh
TRANSISTOR SMD 9bb
smd transistor 2f
transistor D207
TRANSISTOR SMD MARKING CODE 2x
TRANSISTOR SMD MARKING CODE 207
TRANSISTOR SMD MARKING CODE 2F
transistor smd code marking tm
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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OCR Scan
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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TRANSISTOR SMD MARKING CODE 352
Abstract: PBSS304ND PBSS304PD mosfet SMD MARKING CODE 352
Text: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 01 — 7 April 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
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PBSS304ND
OT457
SC-74)
PBSS304PD.
PBSS304ND
TRANSISTOR SMD MARKING CODE 352
PBSS304PD
mosfet SMD MARKING CODE 352
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TRANSISTOR SMD MARKING CODE 352
Abstract: PBSS304ND PBSS304PD
Text: PBSS304ND 80 V, 3 A NPN low VCEsat BISS transistor Rev. 02 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
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PBSS304ND
OT457
SC-74)
PBSS304PD.
PBSS304ND
TRANSISTOR SMD MARKING CODE 352
PBSS304PD
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sot89 footprint
Abstract: PBSS301NX PBSS301PX SMD TRANSISTOR MARKING 5H
Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
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PBSS301PX
SC-62/TO-243)
PBSS301NX.
PBSS301PX
sot89 footprint
PBSS301NX
SMD TRANSISTOR MARKING 5H
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Untitled
Abstract: No abstract text available
Text: PBSS301PX 12 V, 5.3 A PNP low VCEsat BISS transistor Rev. 02 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
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PBSS301PX
SC-62/TO-243)
PBSS301NX.
PBSS301PX
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: No abstract text available
Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3−phase alternators. It drives an external power Darlington for control of the alternator
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CS3341,
CS3351,
CS387
CS3341/3351/387
CS3341
CS3351
CS387
CS3361.
TRANSISTOR SMD MARKING CODE 1 KW
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: smd TRANSISTOR code marking wL TRANSISTOR SMD MARKING CODE MF fet alternator regulator circuit CS387 CS3341 CS3341YD14 CS3341YD14G CS3341YDR14 CS3351
Text: CS3341, CS3351, CS387 Alternator Voltage Regulator Darlington Driver The CS3341/3351/387 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3−phase alternators. It drives an external power Darlington for control of the alternator
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CS3341,
CS3351,
CS387
CS3341/3351/387
CS3341
CS3351
SOIC-14
CS387
CS3361.
TRANSISTOR SMD MARKING CODE 1 KW
smd TRANSISTOR code marking wL
TRANSISTOR SMD MARKING CODE MF
fet alternator regulator circuit
CS3341YD14
CS3341YD14G
CS3341YDR14
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b
Text: PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB6532UP
OT1118
MOSFET TRANSISTOR SMD MARKING CODE A1
transistor marking codes K 044
PMFPB6532
MOSFET TRANSISTOR SMD 033
marking code 1b
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SMD TRANSISTOR MARKING 1B
Abstract: No abstract text available
Text: ' 1 PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
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PMFPB6532UP
DFN2020-6
OT1118)
SMD TRANSISTOR MARKING 1B
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