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    PMFPB6532UP Search Results

    PMFPB6532UP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PMFPB6532UP NXP Semiconductors P-channel MOSFET-Schottky combination Original PDF
    PMFPB6532UP,115 NXP Semiconductors PMFPB6532UP - 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination, SOT1118 Package, Standard Marking, Reel Pack, SMD Original PDF

    PMFPB6532UP Datasheets Context Search

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    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b
    Text: PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 1 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB6532UP OT1118 MOSFET TRANSISTOR SMD MARKING CODE A1 transistor marking codes K 044 PMFPB6532 MOSFET TRANSISTOR SMD 033 marking code 1b

    SMD TRANSISTOR MARKING 1B

    Abstract: No abstract text available
    Text: ' 1   PMFPB6532UP 20 V, 3.5 A / 320 mV VF P-channel MOSFET-Schottky combination Rev. 2 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Small-signal P-channel enhancement mode Field-Effect Transistor FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB6532UP DFN2020-6 OT1118) SMD TRANSISTOR MARKING 1B

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS

    p-channel mosfet with diode sot89

    Abstract: PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA
    Text: NXP leadless, 2 x 2 mm SOT1061 and SOT1118 packages Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of


    Original     		PDF OT1061 OT1118 OT1061) OT1118) ap6545UP PMFPB6532UP p-channel mosfet with diode sot89 PMFPB6532 PMFPB6545 AEC-Q101-qualified PMEG30 MOSFET455 PBSS304PX PMEG3020CPA PMEG4010CPA PMEG2020CPA

    TRANSISTOR S1A 64 smd

    Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
    Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form


    Original     		PDF OT1061 OT1118 PSSI2021SAY PTVS10VP1UP TRANSISTOR S1A 64 smd SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030

    Untitled

    Abstract: No abstract text available
    Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery


    Original     		PDF AN10910

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


    Original     		PDF OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF

    transistor bjt 331

    Abstract: 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603
    Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 01 — 28 April 2010 Application note Document information Info Content Keywords BISS, Battery charger, Li-Ion battery Li-polymer battery , overvoltage


    Original     		PDF AN10910 AN10910 transistor bjt 331 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603