Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD TRANSISTOR MARKING 5C W Search Results

    SMD TRANSISTOR MARKING 5C W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR MARKING 5C W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD TRANSISTOR MARKING 5c

    Abstract: smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT4124 = 5C Pin configuration


    Original     		PDF OT-23 CMBT4124 C-120 SMD TRANSISTOR MARKING 5c smd transistor 5c smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c npn 5C smd transistor 5c smd package CMBT4124 transistor marking SA p sot-23

    smd transistor 5c sot-23

    Abstract: SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT4124 C-120 smd transistor 5c sot-23 SMD TRANSISTOR MARKING 5c smd transistor 5c ts 4141 TRANSISTOR smd transistor marking SA p sot-23 smd transistor 5c p SMD TRANSISTOR MARKING 5c npn SA sot-23 smd transistor 5c l SMD MARKING 5c npn

    smd transistor 5c sot-23

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking CMBT4124 = 5C Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2


    Original     		PDF OT-23 CMBT4124 C-120 smd transistor 5c sot-23

    5g smd transistor

    Abstract: SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H


    Original     		PDF OT-23 BC807 BC808 BC807â BC807-40 BC808â 5g smd transistor SMD Transistor 5f SMD TRANSISTOR MARKING 5H smd transistor 5c sot-23

    smd 5H transistor

    Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H


    Original     		PDF OT-23 BC807 BC808 BC807 BC807-40 BC808 smd 5H transistor 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    SMD TRANSISTOR MARKING 5c

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT4124 GENERAL PURPOSE TRANSISTOR N–P–N transistor PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT4124 C-120 SMD TRANSISTOR MARKING 5c

    smd 5H transistor

    Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c 5B smd transistor data smd transistor 5c smd transistor marking 5D SMD TRANSISTOR MARKING 5c bc807 5C smd bc807 smd diode 5H
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D


    Original     		PDF OT-23 BC807 BC808 BC807 BC807-40 BC808 smd 5H transistor 5g smd transistor SMD TRANSISTOR MARKING 5c 5B smd transistor data smd transistor 5c smd transistor marking 5D SMD TRANSISTOR MARKING 5c bc807 5C smd smd diode 5H

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Text: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		PDF SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS

    sot89 footprint

    Abstract: TRANSISTOR SMD MARKING CODE 5c PBSS302NX SMD TRANSISTOR MARKING 5c SOT89 smd marking 20 TRANSISTOR SMD CODE PACKAGE SOT89 PBSS302PX transistor marking codes K 044
    Text: PBSS302NX 20 V, 5.3 A NPN low VCEsat BISS transistor Rev. 01 — 24 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS302NX SC-62/TO-243) PBSS302PX. PBSS302NX sot89 footprint TRANSISTOR SMD MARKING CODE 5c SMD TRANSISTOR MARKING 5c SOT89 smd marking 20 TRANSISTOR SMD CODE PACKAGE SOT89 PBSS302PX transistor marking codes K 044

    Untitled

    Abstract: No abstract text available
    Text: PBSS302NX 20 V, 5.3 A NPN low VCEsat BISS transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS302NX SC-62/TO-243) PBSS302PX. PBSS302NX

    20n60c3

    Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
    Text: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original     		PDF SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60

    20N60C3

    Abstract: Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60
    Text: Final data SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 Q67040-S4397 transistor 20N60c3 Q67040-S4398 sp*20n60c3 smd 20n60c3 SPB20N60C3 diode smd marking code 621 20n60c3 transistor 20N60

    smd transistor marking j6

    Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
    Text: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation


    Original     		PDF ISL6227EVAL2Z ISL6227 ISL6227EVAL1 AN1068 smd transistor marking j6 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5 04N60S 04n60
    Text: SPP04N60S5 SPB04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5 04N60S 04n60

    TRANSISTOR 12N50C3

    Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
    Text: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB12N50C3 P-TO263-3-2 Q67040-S4641 12N50C3 TRANSISTOR 12N50C3 12N50C3 SPB12N50C3 SPP12N50C3

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Text: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		PDF SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking

    Untitled

    Abstract: No abstract text available
    Text: UC1625-SP SLUSAG8A – SEPTEMBER 2011 – REVISED SEPTEMBER 2011 www.ti.com RAD-TOLERANT CLASS V, BRUSHLESS DC MOTOR CONTROLLER Check for Samples: UC1625-SP • FEATURES 1 • • • • • 1 QML-V Qualified, SMD 5962-91689 Rad-Tolerant: 40 kRad (Si) TID (1)


    Original     		PDF UC1625-SP

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2
    Text: SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2


    Original     		PDF SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 P-TO220-3-31 P-TO262 P-TO263-3-2 P-TO220-3-1 12N50C3 TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3

    07n60c3

    Abstract: 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07n60c3 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3

    07n65c3

    Abstract: 07n65 SPA07N65C3 SPI07N65C3 SPP07N65C3 smd diode marking G12 P-TO220-3-31
    Text: SPP07N65C3, SPI07N65C3 SPA07N65C3 Cool MOS Power Transistor Feature VDS @ Tjmax 730 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP07N65C3, SPI07N65C3 SPA07N65C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP07N65C3 07n65c3 07n65 SPA07N65C3 SPI07N65C3 SPP07N65C3 smd diode marking G12 P-TO220-3-31

    003M2

    Abstract: qml-38535 26C31 CQCC1-N20 GDFP2-F16 GDIP1-T16 SMD TRANSISTOR MARKING 2D TRANSISTOR SMD MARKING CODE 2d marking code 1g1 smd diode s40
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add vendor CAGE 01295. Make change to V|sj and P q as specified under paragraph 1.3. Make change to V o n 'CC- *OZ- •SC- skew, tp n z , and tpi 7 tests as specified in table I. Changes in accordance with N.O.R. 5962-R109-95.


    OCR Scan     		PDF 5962-R109-95. TG047DÃ G0342b2 003M2 qml-38535 26C31 CQCC1-N20 GDFP2-F16 GDIP1-T16 SMD TRANSISTOR MARKING 2D TRANSISTOR SMD MARKING CODE 2d marking code 1g1 smd diode s40

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


    OCR Scan     		PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p