MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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transistor SMD g 28
Abstract: No abstract text available
Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
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BLF8G20LS-400PV;
BLF8G20LS-400PGV
BLF8G20LS-400PV
LS-400PGV
transistor SMD g 28
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ROGERS DUROID 6002
Abstract: No abstract text available
Text: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 2 — 10 February 2014 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range.
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BLA6H0912L-1000;
BLA6H0912LS-1000
BLA6H0912L-1000
0912LS-1000
ROGERS DUROID 6002
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smd dual darlington transistor
Abstract: TRANSISTOR SMD 10p Theta-J theta-j solid smd ss 5 transistor Transistor z1 smd LDA100 LDA110 LDA200 LDA201
Text: CLARE C P / SOLI» STATE 2SE D 21M4TÛ4 0QD01GÖ S S3. LDÂ Series Solid-State Current Sensors The Theta-J LDA Series of solid-state current sensors is a family of optically coupled phototransistors that service a wide range of control applications where input to output electrical isolation is desirable.
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21M4TQ4
E76270
681-73Q0
DSCS881115/25K
smd dual darlington transistor
TRANSISTOR SMD 10p
Theta-J
theta-j solid
smd ss 5 transistor
Transistor z1 smd
LDA100
LDA110
LDA200
LDA201
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kl4 transistor
Abstract: smd transistor kl4 SMD kl4
Text: Bill of Materials for the NCV786XXAR10GEVK Evaluation Board Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number Substitution Lead Free Allowed 2 2 1 1 Capacitor SMD X7R Capacitor SMD X7R Capacitor SMD X7R Capacitor SMD ELCO Low ESR
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NCV786XXAR10GEVK
100n/100V
220n/100V
1uF/50V
47uF/50V
C1206C104K1RACTU
C1206C224K1RACTU
C1206F105K5RACTU
MAL215371479E3
2uF/100V
kl4 transistor
smd transistor kl4
SMD kl4
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GROUND BASED RADAR
Abstract: transistor SMD R1D
Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications
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HVV1214-140
21DD1E)
GROUND BASED RADAR
transistor SMD R1D
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Untitled
Abstract: No abstract text available
Text: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications at 1030 MHz. Table 1. Test information
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BLA6H0912L-1000;
BLA6H0912LS-1000
BLA6H0912L-1000
0912LS-1000
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11n06
Abstract: 11n06LT transistor smd YR 11N06L smd transistor 5c SMD footprint design smd transistor 5c l 5c smd transistor
Text: Philips Semiconductors Preliminary specification PHP11N06LT, PHB11N06LT, PHD11N06LT TrenchMOS transistor Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Vdss —55 V • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance
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PHP11N06LT,
PHB11N06LT,
PHD11N06LT
PHP11N06LT
T0220AB)
11n06
11n06LT
transistor smd YR
11N06L
smd transistor 5c
SMD footprint design
smd transistor 5c l
5c smd transistor
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Untitled
Abstract: No abstract text available
Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.
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BLC8G27LS-160AV
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AIRBORNE DME
Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
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HVV1012-550
1025MHz
1150MHz.
AIRBORNE DME
transistor SMD 12W MOSFET
transistor SMD 12W
smd transistor code 12w
RF Transistor S10-12
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transistor SMD 12W MOSFET
Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the
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HVV1011-600
1030MHz
1090MHz.
transistor SMD 12W MOSFET
transistor SMD 12W
transistor JE 1090
smd transistor code 12w
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 2 — 22 April 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-150V;
BLF8G27LS-150GV
BLF8G27LS-150V
8G27LS-150GV
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transistor 742
Abstract: j494 transistor blf8g22ls
Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
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BLF8G22LS-270V;
BLF8G22LS-270GV
BLF8G22LS-270V
8G22LS-270GV
transistor 742
j494 transistor
blf8g22ls
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transistor j241
Abstract: transistor j239 J241 transistor
Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 2 — 10 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
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BLF8G22LS-200V;
BLF8G22LS-200GV
BLF8G22LS-200V
8G22LS-200GV
transistor j241
transistor j239
J241 transistor
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PCE3667CT-ND
Abstract: capacitor 56J pF a 69154 CLF1G0060-30 SOT1227A 200V470
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
PCE3667CT-ND
capacitor 56J pF
a 69154
SOT1227A
200V470
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SOT1227A
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 4 — 20 June 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
SOT1227A
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Untitled
Abstract: No abstract text available
Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 3 — 30 May 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-10;
CLF1G0060S-10
CLF1G0060-10
CLF1G0060S-10
1G0060S-10
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ATC 600F
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 3 — 27 March 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
ATC 600F
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Untitled
Abstract: No abstract text available
Text: CLF1G0060-30; CLF1G0060S-30 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-30;
CLF1G0060S-30
CLF1G0060-30
CLF1G0060S-30
1G0060S-30
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sot1227
Abstract: 082279 SOT1227A Model 284J 226J
Text: CLF1G0060-10; CLF1G0060S-10 Broadband RF power GaN HEMT Rev. 1 — 8 October 2012 Objective data sheet 1. Product profile 1.1 General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Table 1.
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CLF1G0060-10;
CLF1G0060S-10
CLF1G0060-10
CLF1G0060S-10
1G0060S-10
sot1227
082279
SOT1227A
Model 284J
226J
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siemens Transistoren
Abstract: induktive triac ansteuerung smd transistors SIPMOS application note BSS98 equivalent Siemens Halbleiter Bauelemente Siemens Halbleiter
Text: Technische Angaben Technical Information SIEMENS SIPMOS Kleinsignal-Bauelemente SIPMOS® Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.
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