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    SMD TRANSISTOR ISS 7 Search Results

    SMD TRANSISTOR ISS 7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR ISS 7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor ISS

    Abstract: 2SK3899 2SK38
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		PDF 2SK3899 O-263 smd transistor ISS 2SK3899 2SK38

    smd transistor ISS

    Abstract: 2SK3900
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3900 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 10 mÙ MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss =3500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		PDF 2SK3900 O-263 smd transistor ISS 2SK3900

    smd transistor ISS

    Abstract: mosfet 20v 30A 2SK3901 SMD Transistor MU
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3901 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low On-state resistance 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low C iss: C iss =1950 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS on 2 = 16.5 mÙ MAX. (VGS = 4.5 V, ID = 30A)


    Original     		PDF 2SK3901 O-263 smd transistor ISS mosfet 20v 30A 2SK3901 SMD Transistor MU

    03 07 qfn 3x3

    Abstract: F QFN 3X3 16 pins qfn 3x3 qfn 3x3 16L XX1000-QT-EV1 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT August 2007 - Rev 16-Aug-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF X1000-QT 16-Aug-07 XX1000-QT 03 07 qfn 3x3 F QFN 3X3 16 pins qfn 3x3 qfn 3x3 16L XX1000-QT-EV1 XX1000-QT-0G00 XX1000-QT-0G0T

    XX1000-QT

    Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 X1000-QT
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT February 2007 - Rev 08-Feb-07 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF X1000-QT 08-Feb-07 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 X1000-QT

    Untitled

    Abstract: No abstract text available
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT August 2006 - Rev 16-Aug-06 Features +17 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF X1000-QT 16-Aug-06 XX1000-QT

    Frequency Doubler use diode

    Abstract: F QFN 3X3 qfn 3x3 16L 28 qfn 3x3 XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT April 2006 - Rev 28-Apr-06 Features +17 dBm Output Power -30 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF X1000-QT 28-Apr-06 XX1000-QT Frequency Doubler use diode F QFN 3X3 qfn 3x3 16L 28 qfn 3x3 XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1

    20 qfn 3x3

    Abstract: No abstract text available
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT January 2008 - Rev 10-Jan-08 Features +18 dBm Output Power -20 dBc Fundamental Leakage SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF 10-Jan-08 X1000-QT 20 qfn 3x3

    13-Mar-10

    Abstract: qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT March 2010 - Rev 13-Mar-10 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF X1000-QT 13-Mar-10 13-Mar-10 qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3

    Mimix Broadband

    Abstract: XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT September 2010 - Rev 07-Sep-10 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF X1000-QT 07-Sep-10 Mimix Broadband XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 20 qfn 3x3

    SMD Transistor 988

    Abstract: 20 QFN 3x3 F QFN 3X3 qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 ID214 X1000-QT
    Text: 7.5-22.5/15.0-45.0 GHz Active Doubler QFN, 3x3 mm X1000-QT April 2008 - Rev 19-Apr-08 Features +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband's 7.5-22.5/15.0-45.0 GHz SMD active


    Original     		PDF X1000-QT 19-Apr-08 SMD Transistor 988 20 QFN 3x3 F QFN 3X3 qfn 3x3 16L XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 ID214 X1000-QT

    smd transistor ISS

    Abstract: 40V 60A MOSFET 2SK3813 SMD MU
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3813 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		PDF 2SK3813 O-252 smd transistor ISS 40V 60A MOSFET 2SK3813 SMD MU

    smd transistor ISS

    Abstract: 60V 60A TO-252 smd transistor 26 2SK3814
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28


    Original     		PDF 2SK3814 O-252 smd transistor ISS 60V 60A TO-252 smd transistor 26 2SK3814

    SMD transistor Mu

    Abstract: smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3794 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low On-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max


    Original     		PDF 2SK3794 O-252 SMD transistor Mu smd mu diode smd transistor ISS smd diode Mu smd MU 78 DIODE SMD 2SK3794 mu diode SMD Transistor m.u DIODE SMD 10A

    XX1000-QT

    Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 6TH 10
    Text: XX1000-QT Active Doubler 7.5-22.5/15.0-45.0 GHz Rev. V1 Features •     Functional Block Diagram +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260°C Reflow Compatible


    Original     		PDF XX1000-QT XX1000-QT XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 6TH 10

    Untitled

    Abstract: No abstract text available
    Text: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V Drain-Source on-state resistance DS on 0.4 W 7 A · Enhancement mode Continuous drain current · Avalanche rated D · d /d rated Pin 1 Pin 2 Pin 3 Type


    Original     		PDF 07N20 SPD07N20 PG-TO252 SPU07N20 PG-TO251 SPD07N20

    Untitled

    Abstract: No abstract text available
    Text: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V · Enhancement mode Drain-Source on-state resistance DS on 0.4 W · Avalanche rated Continuous drain current 7 A D · d /d rated Pin 1 Pin 2 Pin 3 Type


    Original     		PDF 07N20 SPD07N20 SPU07N20 PG-TO252 PG-TO251 SPD07N20

    SMD Transistor 30w

    Abstract: 945 TRANSISTOR PD57030S PD57030 XPD57030 XPD57030S
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57030 PD57030S PD57030 PowerSO-10RF. SMD Transistor 30w 945 TRANSISTOR PD57030S XPD57030 XPD57030S

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH106 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V


    OCR Scan     		PDF BSH106 BSH106 OT363 OT363

    ld smd transistor LD 33

    Abstract: BSH105N
    Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH105 SYMBOL QUICK REFERENCE DATA • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package v ns = 20 V


    OCR Scan     		PDF BSH105 BSH105 ld smd transistor LD 33 BSH105N

    smd transistor LY

    Abstract: smd transistor ISS smd transistor ISS 7
    Text: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.


    OCR Scan     		PDF BST120 MDA77S smd transistor LY smd transistor ISS smd transistor ISS 7

    smd transistor marking HA

    Abstract: TRANSISTOR SMD MARKING 2 HA SMD transistor code AL TRANSISTOR SMD MARKING CODE al SMD TRANSISTOR MARKING code DD Marking code m8t marking m8t TRANSISTOR SMD MARKING CODE dd SMD TRANSISTOR MARKING Dd
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20W PINNING - SOT323 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL • High-speed switching 1 g gate • No secondary breakdown. 2 s source


    OCR Scan     		PDF BSN20W OT323 smd transistor marking HA TRANSISTOR SMD MARKING 2 HA SMD transistor code AL TRANSISTOR SMD MARKING CODE al SMD TRANSISTOR MARKING code DD Marking code m8t marking m8t TRANSISTOR SMD MARKING CODE dd SMD TRANSISTOR MARKING Dd

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH206 SYMBOL QUICK REFERENCE DATA VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


    OCR Scan     		PDF BSH206 BSH206 OT363 OT363

    BSH205

    Abstract: smd transistor JE 45 smd transistor ISS smd transistor JE
    Text: Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES BSH205 QUICK REFERENCE DATA SYMBOL VDS = -12 V • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package


    OCR Scan     		PDF BSH205 BSH205 smd transistor JE 45 smd transistor ISS smd transistor JE