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    SMD TRANSISTOR GD Search Results

    SMD TRANSISTOR GD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR GD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    04n03la

    Abstract: 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177
    Text: OptiMOS 2 Power-Transistor IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		PDF IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04n03la 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original     		PDF IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13

    09N03LA

    Abstract: IPS09N03LA 09N03 diode marking 321 09N03LA datasheet IPD09N03LA 09N03LA equivalent IPF09N03LA IPU09N03LA P-TO251-3-1
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		PDF IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 P-TO252-3-23 09N03LA 09N03 diode marking 321 09N03LA datasheet 09N03LA equivalent P-TO251-3-1

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		PDF IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A

    Untitled

    Abstract: No abstract text available
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11

    05N03LA

    Abstract: IPF05N03LA 05n03l IPD05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l P-TO252-3-11

    09N03LA

    Abstract: IPS09N03LA IPD09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent IPF09N03LA IPU09N03LA P-TO252-3-11
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		PDF IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 P-TO252-3-23 09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent P-TO252-3-11

    09N03

    Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23 09N03 09n03lb 09n03l PG-TO252-3-11

    IPS09N03LA

    Abstract: IPD09N03LA
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ


    Original     		PDF IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA PG-TO252-3-11 Q67042-S4268

    Q67065-A7014

    Abstract: IPI80N06S3L06
    Text: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80


    Original     		PDF IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S3L-06 IPI80N06S3L-06 PG-TO263-3-2 Q67065-A7014 IPI80N06S3L06

    06n03la

    Abstract: IPD06N03LA
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ


    Original     		PDF IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA PG-TO252-3-11 Q67042-S4278 06n03la

    IPS04N03LA G

    Abstract: max5199
    Text: OptiMOS 2 Power-Transistor IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		PDF IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA IPD04N03LA IPF04N03LA P-TO252-3-11 Q67042-S4177 IPS04N03LA G max5199

    09n03la

    Abstract: IPS09N03LA IPD09N03LA 09n03
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		PDF IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA PG-TO252-3-11 Q67042-S4268 09n03la 09n03

    06n03la

    Abstract: IPD06N03LA
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID


    Original     		PDF IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA PG-TO252-3-11 Q67042-S4278 06n03la

    06n03la

    Abstract: 06n03l 06N03 06n03la datasheet, download SMD BR 32 IPU06N03LA 06n03la datasheet IPS06N03LA TO252-3 IPF06N03LA
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID


    Original     		PDF IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA P-TO252-3-11 P-TO252-3-23 06n03la 06n03l 06N03 06n03la datasheet, download SMD BR 32 06n03la datasheet TO252-3

    h6n03la

    Abstract: H6N03 A5082 Q67045-A5082 H6N03L Q67045-A5065 IPDH6N03LA PG-TO252-3-11
    Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID


    Original     		PDF IPDH6N03LA IPSH6N03LA IPFH6N03LA IPUH6N03LA PG-TO252-3-11 PG-TO252-3-23 h6n03la H6N03 A5082 Q67045-A5082 H6N03L Q67045-A5065 PG-TO252-3-11

    085N06L

    Abstract: IPB085N06L smd marking g23 PG-TO220-3 marking g23 SMD
    Text: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 8.2 m: 80 A • 175 °C operating temperature


    Original     		PDF IPB085N06L IPP085N06L PG-TO263-3 P-TO262 PG-TO220-3 085N06L 085N06L smd marking g23 PG-TO220-3 marking g23 SMD

    110N06L

    Abstract: smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N IPP110N06L diode smd 312
    Text: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 11 m: 78 A • 175 °C operating temperature


    Original     		PDF IPB110N06L IPP110N06L PG-TO263-3 P-TO26 PG-TO220-3 110N06L 110N06L smd diode 78a smd diode marking 78A SMD diode D94 PG-TO220-3 PG-TO263 marking d78 IPP110N diode smd 312

    Untitled

    Abstract: No abstract text available
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23

    09N03LA

    Abstract: No abstract text available
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		PDF IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 P-TO252-3-23 09N03LA

    09n03la

    Abstract: IPD09N03LA
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		PDF IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 09N03LA 09n03la

    05N03LA

    Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03 fet to251 marking CODE R SMD DIODE P-TO252-3-11 05N03L