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    SMD TRANSISTOR 6C Search Results

    SMD TRANSISTOR 6C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD TRANSISTOR 6C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    SMD TRANSISTOR MARKING 4c

    Abstract: PBSS8110X PBSS9110X
    Text: PBSS9110X 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X.


    Original     		PBSS9110X SC-62/ O-243) PBSS8110X. PBSS9110X SMD TRANSISTOR MARKING 4c PBSS8110X PDF

    PB9110

    Abstract: PBSS9110Z PBSS8110Z SC-73
    Text: PBSS9110Z 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS9110Z OT223 SC-73) PBSS8110Z. PBSS9110Z PB9110 PBSS8110Z SC-73 PDF

    PBSS8110X

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 PBSS9110X
    Text: PBSS8110X 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.


    Original     		PBSS8110X SC-62/ O-243) PBSS9110X. PBSS8110X TRANSISTOR SMD CODE PACKAGE SOT89 PBSS9110X PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110X 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X.


    Original     		PBSS9110X SC-62/ O-243) PBSS8110X. PBSS9110X PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110Z 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS9110Z OT223 SC-73) PBSS8110Z. PBSS9110Z PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS8110X 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.


    Original     		PBSS8110X SC-62/ O-243) PBSS9110X. PBSS8110X PDF

    PBSS8110D

    Abstract: PBSS9110D SC74 marking 345
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D PBSS8110D SC74 marking 345 PDF

    st smd IC marking code

    Abstract: 3STL2540
    Text: 3STL2540 Low voltage high performance PNP power transistor Datasheet — production data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Small, thin, leadless SMD plastic package with excellent thermal behavior


    Original     		3STL2540 L2540 st smd IC marking code 3STL2540 PDF

    SMD TRANSISTOR MARKING 6C

    Abstract: smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b
    Text: Transistors IC SMD Type General Purpose Transistor BC817W Features High current. Low voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage IC = 10 mA


    Original     		BC817W BC817-25W BC817-40W BC817-16W SMD TRANSISTOR MARKING 6C smd transistor 6B SMD TRANSISTOR MARKING 6B transistor SMD 6b 6b smd transistor MARKING SMD TRANSISTOR 6c transistor smd 6C smd transistor 6c TRANSISTOR 6B smd SMD 6b PDF

    Q67042-S4057

    Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
    Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking


    Original     		SPP100N03S2-03 SPB100N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4058 PN0303 P-TO263-3-2 Q67042-S4057 Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303 PDF

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264 PDF

    Q67042-S4057

    Abstract: SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303
    Text: Preliminary data SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version 30 V 3 mΩ


    Original     		SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP100N03S2-03 Q67042-S4058 PN0303 Q67042-S4057 SPB100N03S2-03 SPI100N03S2-03 PN0303 PDF

    Q67042-S4057

    Abstract: ANPS071E SPB100N03S2-03 SPI100N03S2-03 SPP100N03S2-03 PN0303 Q67042-S4058
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode RDS on max. SMD version 3 mΩ • Excellent Gate Charge x RDS(on) product (FOM) ID • Superior thermal resistance


    Original     		SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPP100N03S2-03 Q67042-S4058 Q67042-S4057 PN0303 Q67042-S4116 Q67042-S4057 ANPS071E SPB100N03S2-03 SPI100N03S2-03 PN0303 Q67042-S4058 PDF

    3P03L04

    Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
    Text: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V


    Original     		IPI80P03P3L-04 IPP80P03P3L-04 IPB80P03P3L-04 IPP80P03P3L-04 3P03L04 BIPP80P03P3L-04, 3P03L04 ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 package to220 DIODE smd marking code UM 31 PDF

    Q67060-S6038

    Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
    Text: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID


    Original     		SPP100N04S2L-03 SPB100N04S2L-03 P-TO263-3-2 P-TO220-3-1 SPP100N04S2L-03 Q67060-S6038 PN04L03 SPB100N04S2L-03 Q67060-S6038 Diode 1_b SMD PN04L03 PDF

    pn06l05

    Abstract: SPB100N06S2L-05 SPB100N06S2L05 SPP100N06S2L-05 Q67060-S6042
    Text: SPP100N06S2L-05 SPB100N06S2L-05 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 55 RDS on max. SMD version 4.4


    Original     		SPP100N06S2L-05 SPB100N06S2L-05 P-TO263-3-2 P-TO220-3-1 SPP100N06S2L-05 Q67060-S6043 PN06L05 SPB100N06S2L-05 pn06l05 SPB100N06S2L05 Q67060-S6042 PDF

    3N0625

    Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
    Text: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9


    Original     		IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 IPP25N06S3-25 3N0625 BIPP25N06S3-25, 3N0625 INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon PDF

    IPP25N06S3L-21

    Abstract: Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING
    Text: Target data sheet IPI25N06S3L-21 IPP25N06S3L-21,IPB25N06S3L-21 OptiMOS -T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • Logic Level • AEC Q101 qualified max. SMD version P- TO262 -3-1 P- TO263 -3-2 55 V


    Original     		IPI25N06S3L-21 IPP25N06S3L-21 IPB25N06S3L-21 IPP25N06S3L-21 3N06L21 BIPP25N06S3L-21, Diode smd marking 44 ANPS071E IPB25N06S3L-21 INFINEON smd PART MARKING PDF

    3PN0603

    Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
    Text: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V


    Original     		IPI100N06S3-03 IPP100N06S3-03 IPB100N06S3-03 IPP100N06S3-03 3PN0603 BIPP100N06S3-03, 3PN0603 INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 PDF

    Q67042-S4057

    Abstract: No abstract text available
    Text: SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS =Power-Transistor Product Summary Feature 30 VDS  N-Channel RDS on  Enhancement mode ID  Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance max. SMD version P- TO262 -3-1 V m


    Original     		SPI100N03S2-03 SPP100N03S2-03 SPB100N03S2-03 SPB100N03S2-03 Q67042-S4058 Q67042-S4057 Q67042-S4116 PN0303 PDF

    2N04L03

    Abstract: SPB80N04S2L-03 SPP80N04S2L-03
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1


    Original     		SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 Q67040-S4261 Q67040-S4262 2N04L03 SPB80N04S2L-03 SPP80N04S2L-03 PDF